Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> SMTBJ120B

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SMTBJ120B: 产品描述265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA; 产品类别模拟混合信号IC 触发装置; 文件大小81KB，共2页; 制造商Littelfuse; 官网地址http://www.littelfuse.com

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SMTBJ120B概述

265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA

SMTBJ120B规格参数

参数名称	属性值
零件包装代码	DO-214AA
包装说明	SMALL OUTLINE, R-PDSO-C2
针数	2
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	UL RECOGNIZED
最大转折电压	165 V
配置	SINGLE
JEDEC-95代码	DO-214AA
JESD-30 代码	R-PDSO-C2
通态非重复峰值电流	30 A
元件数量	1
端子数量	2
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
认证状态	Not Qualified
表面贴装	YES
端子形式	C BEND
端子位置	DUAL
触发设备类型	SILICON SURGE PROTECTOR
Base Number Matches	1

文档解析

SMTBJ SiBODTM系列器件在机械设计上注重可靠性和生产效率。采用转移模压技术制造的环氧树脂体，确保无空洞结构，提供优异的机械强度和热管理性能。端子设计为改进的J形弯曲，增大了与PCB焊盘的接触面积，从而提高焊接可靠性和电气连接稳定性。引线镀有锡/铅层，增强耐腐蚀性和可焊性，适用于各种焊接环境。产品包装为标准12mm磁带，符合EIA 481-1规范，便于卷带处理和自动化贴装，提高制造效率。电气方面，该系列提供双向瞬态电压保护，玻璃钝化结技术确保快速响应和高可靠性。浪涌能力高达250安培，适合高浪涌应用场景，如工业电机驱动或电源输入保护。无性能退化特性确保器件在长期使用中保持一致性，减少维护需求。设备标记清晰，包括设备代码和logo，便于识别和追溯。绝对额定值包括Peak Pulse Current for 10/1000µs和8-20µs波形，以及Non-repetitive surge peak on-state current，确保在极端条件下安全操作。结温度范围-40°C至+150°C，适应恶劣环境。焊接温度限制230°C for 10秒，保护器件 during回流焊过程。适用于电源系统、通信设备和 automotive electronics。

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SMTBJ SiBOD

™

series

FEATURES

2.16

2.74

2.16

Bi-directional transient voltage protection

Glass passivated junction

Nano second clamping response

Surge capability up to 250 (Amps)

No performance degradation under service life

Industry standard DO-2144AA Jedec outline

Available on tape (12mm)

UL recognised

Solder Pads

2.26

All dimensions in mm

MECHANICAL CHARACTERISTICS

Transfer molded, void free epoxy body

Terminals: modified ‘J’ bend for large contact area

Tin/Lead plated leads

Maximum case temperature for soldering purposes: 230°C for 10 seconds

Standard packaging: 12mm tape (meets EIA 481-1)

Device marking, device code, logo

2.0

5.21/5.59

4.06/4.57

.102

.203

0.76/1.27

3.30/3.94

2.18/2.44

SEATING PLANE

w w w. l i t t e l f u s e . c o m

SMTBJ120B相似产品对比

	SMTBJ120B	SMTBJ170B	SMTBJ120A	SMTBJ100A	SMTBJ070B	SMTBJ070A	SMTBJ
描述	265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA	265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA	265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA	265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA	265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA	265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA	265 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA
元件数量	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2
表面贴装	YES	YES	YES	YES	YES	YES	Yes
端子形式	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
零件包装代码	DO-214AA	DO-214AA	-	DO-214AA	-	DO-214AA	-
包装说明	SMALL OUTLINE, R-PDSO-C2	SMALL OUTLINE, R-PDSO-C2	SMALL OUTLINE, R-PDSO-C2	SMALL OUTLINE, R-PDSO-C2	SMALL OUTLINE, R-PDSO-C2	SMALL OUTLINE, R-PDSO-C2	-
针数	2	2	-	2	-	2	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	-
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-
其他特性	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	-
最大转折电压	165 V	215 V	165 V	135 V	120 V	120 V	-
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
JEDEC-95代码	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	-
JESD-30 代码	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	-
通态非重复峰值电流	30 A	30 A	30 A	30 A	30 A	30 A	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
触发设备类型	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	-
Base Number Matches	1	1	1	-	1	1	-
是否Rohs认证	-	不符合	不符合	-	不符合	不符合	-
最大断态直流电压	-	170 V	120 V	-	70 V	70 V	-
JESD-609代码	-	e0	e0	-	e0	e0	-
峰值回流温度（摄氏度）	-	NOT SPECIFIED	245	-	245	NOT SPECIFIED	-
端子面层	-	TIN LEAD	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	TIN LEAD	-
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	60	-	60	NOT SPECIFIED	-

SMTBJ120B

SMTBJ120B概述

SMTBJ120B规格参数

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