Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a
low-cost, surface-mountable plastic package.
These amplifiers are specially designed for use as driver devices for
infrastructure equipment in the 5-2500 MHz Cellular, ISM, WLL, PCS &
W-CDMA applications. It’s high linearity makes it an ideal choice for
multi-carrier as well as digital applications.
5-2500 MHz Medium Power InGaP/GaAs
HBT Amplifier
RoHS Compliant
Pb
&
Green
Package
50
45
40
35
30
25
20
15
10
5
0
Typical IP3, P1dB, Gain
IP3
IP3
IP3
Product Features
•
•
•
•
•
•
High OIP3: +43dBm
at 1960 MHz
P1dB: 24dBm
High Linearity/ACP Performance
Robust 2000V ESD, Class 2
SOT-89 package
MSL 1 moisture rating
P1dB Gain
P1dB
Gain
P1dB
Gain
Applications
•
PA Driver Amplifier
•
IF Amplifier
•
Cellular, PCS, ISM, WLL, W-CDMA
Units
Min.
Typ.
Max.
880 MHz
Symbol
1960 MHz
Parameters
2140 MHz
P
1dB
Output Power at 1 dB Compression
dBm
450 MHz
880 MHz
1960 MHz
2140 MHz
450 MHz
880 MHz
1960 MHz
2140 MHz
450 MHz
880 MHz
1960 MHz
2140 MHz
450 MHz
880 MHz
1960 MHz
2140 MHz
450 MHz
880 MHz
1960 MHz
2140 MHz
450 MHz
880 MHz
1960 MHz
2140 MHz
Vs = 8V
Rbias = 20 Ohms
Vdevice = 5.2V
120
24.1
24.5
24.2
24.7
25
23
17
17
1.1:1
1.3:1
1.4:1
1.3:1
4.9
4.3
4.3
4.2
40
41
43
43
16
16.3
15.5
15.6
135
51.3
150
S
21
Small Signal Gain
dBm
S
11
Input VSWR
NF
Noise Figure
dB
OIP
3
Third Order Intercept Point
(Pout/tone = +11dBm, Tone spacing = 1MHz)
dBm
ACP
Channel Power
IS-95 at 450/880/1960MHz, -55dBc ACP
WCDMA at 2140MHz, -50dBc ACP
dBm
I
D
R
TH
, j-l
Test Conditions:
Device Current
mA
°C/W
Test Conditions:
Thermal Resistance @ 85C (junction - lead)
T
a
= 25°C
Z
O
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
Absolute Maximum Ratings
Parameter
Max Device Current (I
DQ
)
Max Device Voltage (V
D
)
Max. RF Input Power
Max. Operating Dissipated
Power (quiescent)
Max. Junction Temp. (T
J
)
Operating Temp. Range (T
L
)
Max. Storage Temp.
Absolute Limit
190mA
6V
+20 dBm
Id (mA)
200
Id (25C)
150
Id (-40C)
Id (85C)
100
50
0
0
2
4
6
8
10
250
DCIV over Temperature (with App. Circuits)
1.0 W
+150°C
-40°C to +85°C
+150°C
Test Conditions:
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
T
L
=T
LEAD
Voltage (V)
Noise Figure (with Application Circuits)
6
25C
85C
ESD Class 2, 2000V HBM
5
NF (dB)
Appropriate precautions in handling, packaging
and testing devices must be observed.
4
3
2
1
0
450 MHz
880 MHz
1960 MHz
2140 MHz
MSL
(Moisture Sensitivity Level)
Rating: Level 1
Simplified Device Schematic with ESD diodes
Narrowband
App. Ckt.
Vc/Output
Input
Narrowband
App. Ckt.
Gnd
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
880 MHz Application Circuit Data, I
D
=135mA, T=+25C, R
Bias
=20 Ohm, V
S
=8V
26
26
25
P1dB vs. Frequency
-40
-45
-50
ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 880MHz)
25C
-40C
85C
P1dB (dBm)
ACP (dB)
25C
-40C
85C
860
870
880
890
900
910
25
24
24
23
23
22
850
-55
-60
-65
-70
-75
10
11
12
Frequency (MHz)
13
14
15
16
17
18
19
Channel Power (dBm)
S21 over Temperature
28
0
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
-5
-10
S11
S12
S22
26
24
22
25C
20
18
850
-40C
85C
Gain (dB)
-15
dB
890
900
910
-20
-25
-30
-35
-40
850
860
870
880
890
900
910
860
870
880
Frequency (MHz)
Frequency (MHz)
46
44
42
40
38
36
34
850
OIP3 vs. Freq. (11dBm Output Tones)
46
44
42
40
38
36
34
860
870
880
890
900
910
OIP3 vs. Tone Power @880MHz
OIP3 (dBm)
25C
-40C
85C
OIP3 (dBm)
25C
-40C
85C
2
4
6
8
10
12
14
16
Frequency (MHz)
Pout per tone (dBm)
450 MHz & 2140MHz Application Circuits available in Application Note AN-078 at www.sirenza.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
1960 MHz Application Circuit Data, I
D
=135mA, T=+25C, R
Bias
=20 Ohm, V
S
=8V
26
26
25
P1dB vs. Frequency
-40
-45
-50
ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 1960MHz)
25C
-40C
85C
P1dB (dBm)
ACP (dB)
25C
-40C
85C
25
24
24
23
23
22
1930
-55
-60
-65
-70
-75
1940
1950
1960
1970
1980
1990
10
11
12
13
14
15
16
17
18
19
Frequency (MHz)
Channel Power (dBm)
S21 over Temperature
22
0
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
20
18
-5
-10
Gain (dB)
-15
-20
dB
25C
16
14
12
1930
-40C
85C
1940
1950
1960
1970
1980
1990
-25
-30
-35
-40
1930
1940
1950
S11
S12
S22
1960
1970
1980
1990
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Tone Power @1960MHz
46
44
42
OIP3 vs. Freq. (11dBm Output Tones)
46
44
OIP3 (dBm)
42
40
38
36
34
1930
25C
-40C
85C
IP3 (dBm)
40
38
36
34
25C
-40C
85C
1940
1950
1960
1970
1980
1990
2
4
6
8
10
12
14
16
Frequency (MHz)
Pout per tone (dBm)
450 MHz & 2140MHz Application Circuits available in Application Note AN-078 at www.sirenza.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
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