Teccor
®
brand Thyristors
EV Series 1.5 Amp Sensitive SCRs
HF
Sx02xS Series
Description
New 1.5 Amp sensitive gate SCR series offers high static
dv/dt with low turn off time (tq) through small die planar
construction design. All SCR’s junctions are glass-
passivated to ensure long term reliability and parametric
stability.
Features
Halogen-Free
time (tq) < 35 μsec.
mount packages
Main Features
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT
Value
1.5
400 to 600
200
Unit
A
V
μA
microprocessor interface
capability > 15Amps
(V
DRM
/ V
RRM
)
capability — up to 600V
Schematic Symbol
A
Applications
The Sx02xS EV series is specifically designed for Gas
Ignition applications that require high pulse surge current
capability.
G
K
Absolute Maximum Ratings
Symbol
I
T(RMS)
I
T(AV)
RMS on-state current
(full sine wave)
Average on-state current
Parameter
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
t
p
= 10 ms
t
p
= 8.3 ms
di/dt
I
GM
P
G(AV)
T
stg
T
J
Sx02xS Series
Value
T
C
= 65°C
T
L
= 95°C
T
C
= 65°C
T
C
= 95°C
F = 50 Hz
F = 60 Hz
F = 50 Hz
F = 60 Hz
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
1.5
Unit
A
0.95
12.5
A
I
TSM
Non repetitive surge peak on-state current
(Single cycle, T
J
initial = 25°C)
A
15.0
0.78
A
2
s
0.93
50
1.0
0.1
-40 to 150
-40 to 125
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
I
2
t
I
2
t Value for fusing
Critical rate of rise of on-state current IG = 10mA
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
201
Revised: December 22, 2010 09:54 AM
TO-92
SOT-223
t
p
= 10 μs
A/μs
A
W
°C
°C
Teccor
®
brand Thyristors
EV Series 1.5 Amp Sensitive SCRs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GRM
I
H
Description
DC Gate Trigger Current
DC Gate Trigger Voltage
Peak Reverse Gate Voltage
Holding Current
Critical Rate-of-Rise of
Off-State Voltage
Test Conditions
Sx02xS
Min
15
—
5
—
Max
200
0.8
—
5
Unit
μA
V
V
mA
V
D
= 12V
R
L
= 60 Ω
I
RG
= 10μA
R
GK
= 1 kΩ
T
J
= 125°C
V
D
= V
DRM
/ V
RRM
Exponential Waveform
R
GK
= 1 kΩ
T
J
= 125°C @ 600 V
R
GK
= 1 kΩ
I
G
= 10mA
PW = 15μsec
I
T
= 3.0A (pk)
(dv/dt)s
25
—
V/μs
t
q
t
gt
Turn-Off Time
—
35
μs
Turn-On Time
—
3
μs
Static Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
V
TM
Description
Peak On-State Voltage
Test Conditions
I
TM
= 3.0A (pk)
T
J
= 25°C @ V
D
= V
DRM
R
GK
= 1 kΩ
T
J
= 125°C @ V
D
= V
DRM
R
GK
= 1 kΩ
Value
Min
—
—
—
Max
1.70
5
500
Unit
V
μA
μA
I
DRM
Off-State Current, Peak Repetitive
Thermal Resistances
Symbol
R
th(j-c)
Description
Junction to case (AC)
Test Conditions
TO-92
I
T
= 1.5A
(RMS)1
SOT-223
TO-92
R
th(j-a)
1
Value
50
Unit
°C/W
25
160
°C/W
60
Junction to ambient
I
T
= 1.5A
(RMS)1
SOT-223
60Hz AC resistive load condition, 100% conduction.
Sx02xS Series
202
Revised: December 22, 2010 09:54 AM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor
®
brand Thyristors
EV Series 1.5 Amp Sensitive SCRs
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature
2.5
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
2.0
Normalized Gate: Trigger Current
I
GT
@ T
j
/ I
GT
@ 25ºC
Normalized Holding Current
(I
H
@ T
J
/ I
H
@25∞C)
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
0.0
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
Junction Temperature (T
J
) °C
Junction Temperature (T
J
) °C
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
1.5
Figure 4: Power Dissipation (Typical)
vs. RMS On-State Current
1.5
Average Power Dissipation, P
D
(Watts)
Normalized Gate: Trigger Voltage
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
1.0
(V
GT
@ T
j
/ V
GT
@ 25ºC)
1.0
0.5
0.5
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
0.0
0.0
0.5
1.0
1.5
Junction Temperature (T
J
) °C
RMS On-state Current [I
T(RMS)
] (Amps)
Figure 5: Maximum Allowable Case Temperature
vs. On-State Current
Max Allowable Case Temperature, T
C
(Celsius)
130
120
SOT-223
110
100
TO-92
90
80
70
60
50
0.0
0.5
1.0
1.5
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
RMS On-state Current [I
T (RMS)
] (Amps)
Sx02xS Series
203
Revised: December 22, 2010 09:54 AM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor
®
brand Thyristors
EV Series 1.5 Amp Sensitive SCRs
Figure 6: Surge Peak On-State Current vs. Number of Cycles
20
Peak Surge (Non-repetitive) On-State
Current (I
TSM
) – Amps.
15
12
10
9
8
7
6
5
4
3
1.
5
AD
evic
es
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [I
T(RMS)
]: Max Rated Value at
Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
2
1
1
2
3
4
5 6 7 8 9 10
20
30
40
60 80 100
200
300 400 600
1000
Surge Current Duration – Full Cycle
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (min to max) (t
s
)
Pb – Free assembly
T
P
Temperature
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
t
P
Ramp-up
T
L
T
S(max)
Preheat
t
L
Ramp-do
Ramp-down
T
S(min)
t
S
25
time to peak temperature
Time
Peak Temperature (T
P
)
Time within
5°C
of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
Sx02xS Series
204
Revised: December 22, 2010 09:54 AM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor
®
brand Thyristors
EV Series 1.5 Amp Sensitive SCRs
Physical Specifications
Terminal Finish
100% Matte Tin-plated.
Environmental Specifications
Test
AC Blocking
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwell-
time at each temperature; 10 sec (max)
transfer time between temperature
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Body Material
UL recognized epoxy meeting flammability
classification 94V-0.
Copper Alloy
Temperature Cycling
Lead Material
Temperature/
Humidity
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
High Temp Storage
Low-Temp Storage
Thermal Shock
Autoclave
Resistance to
Solder Heat
Solderability
Lead Bend
Dimensions — TO-92 (E Package)
A
T
C
MEASURING POINT
Inches
Dimensions
Min
Max
0.205
0.210
Millimeters
Min
4.450
4.320
12.70
3.430
0.165
0.105
0.021
0.055
0.105
0.020
3.180
2.040
0.407
1.150
2.420
0.380
4.190
2.660
0.533
1.390
2.660
0.500
Max
5.200
5.330
B
A
0.175
0.170
SEATING
PLANE
C
D
0.500
0.135
0.125
0.080
0.016
0.045
0.095
0.015
C
GATE
E
F
G
G
H
CATHODE
I
D
ANODE
H
I
J
E
J
F
F
Sx02xS Series
205
Revised: December 22, 2010 09:54 AM
©2011 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
