b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68817
S-81956-Rev. B, 25-Aug-08
New Product
SUU50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10 thru
8 V
80
I
D
- Drain Current (A)
V
GS
= 7
V
60
I
D
- Drain Current (A)
1.6
2.0
1.2
40
0.8
T
C
= 25 °C
0.4
T
C
= 125 °C
T
C
= - 55 °C
0.0
20
V
GS
= 6
V
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
75
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
60
0.027
0.036
Transfer Characteristics
45
T
C
= 25 °C
T
C
= 125 °C
0.018
V
GS
= 10
V
30
0.009
15
0
0
10
20
30
40
50
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.10
I
D
= 15 A
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
2800
3500
On-Resistance vs. Drain Current
C
iss
0.06
2100
0.04
T
A
= 150 °C
1400
0.02
T
A
= 25 °C
0.00
4
5
6
7
8
9
10
700
C
oss
0
C
rss
0
20
40
60
80
100
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
Capacitance
Document Number: 68817
S-81956-Rev. B, 25-Aug-08
www.vishay.com
3
New Product
SUU50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
I
D
= 20 A
V
GS
- Gate-to-Source
Voltage
(V)
R
DS(on)
- On-Resistance
(Normalized)
15
V
DS
= 50
V
V
DS
=
80 V
10
2.0
2.5
I
D
= 15 A
V
GS
= 10
V
1.5
5
1.0
0
0
20
40
60
80
100
0.5
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
T
J
= 150 °C
T
J
= 25 °C
1
V
GS(th)
Variance
(V)
0.7
On-Resistance vs. Junction Temperature
10
I
S
- Source Current (A)
0.2
- 0.3
I
D
= 5 mA
- 0.8
0.1
- 1.3
0.01
- 1.8
I
D
= 250
µA
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 2.3
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
300
600
Threshold Voltage
240
500
400
Power (W)
180
Power (W)
300
120
T
A
= 25 °C
60
200
T
C
= 25 °C
100
0
0.001
0
0.01
0.1
1
Time (s)
10
100
1000
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
Single Pulse Power, Junction-to-Case
www.vishay.com
4
Document Number: 68817
S-81956-Rev. B, 25-Aug-08
New Product
SUU50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
1000
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Limited
by
R
DS(on)*
10
µs,
100
µs
100
Limited
by
R
DS(on)*
10
µs,
100
µs
1 ms
10 ms
100 ms, DC
10
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
1s
10 s
100 s, DC
10
100
1000
10
1
0.1
T
C
= 25 °C
Single Pulse
0.01
0.1
1.0
0.01
0.1
1.0
10
100
1000
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
10
60
Safe Operating Area, Junction-to-Case
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
50
Package Limited
40
6
30
4
20
2
10
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating**, Junction-to-Ambient
Current Derating**, Junction-to-Case
** The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
为了在产品众多、竞争激烈的市场上使产品与众不同，手持设备的制造商们往往把电池寿命和电源管理作为手机、PDA、多媒体播放器、游戏机、其它便携式消费类设备等产品的关键卖点来考虑。用户是从电池寿命这方面来看待电源管理的成效，其实它是多种因素共同作用的结果，这些因素包括 CPU 功能、系统软件、中间件，以及使用户可以在更长的充电或更换电池的间隔时间内享用各自设备的策略。 电源管理范围 任...[详细]
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