SUR70N02-04P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.0037 @ V
GS
= 10 V
0.0061 @ V
GS
= 4.5 V
I
D
(A)
a
37
29
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High Efficiency
100% R
g
Tested
APPLICATIONS
D
Synchronous Buck Converter
−
Low Side
D
Synchronous Rectifier
−
Secondary Rectifier
TO-252
Reverse Lead DPAK
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUR70N02-04P—E3
SUR70N02-04P-T4—E3 (altrenate tape orientation)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
a
T
A
= 25_C
T
C
= 25_C
Conduction)
a
L = 0 1 mH
0.1
T
A
= 25_C
T
C
= 25_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
20
"20
37
a
70
b
100
37
30
45
8.3
a
93
−55
to 175
Unit
V
Pulsed Drain Current
Continuous Source Current (Diode
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.3
Maximum
18
50
1.6
Unit
_C/W
C/W
1
SUR70N02-04P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
15
0.0047
50
0.0028
0.0037
0.0052
0.0061
S
W
20
0.8
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 0.2
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
0.5
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
4500
1520
800
1.1
34
11
10
15
11
35
15
25
20
55
25
ns
1.8
153
nC
W
p
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
45
100
1.5
90
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
140
120
I D
−
Drain Current (A)
100
80
60
40
20
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
3V
V
GS
= 10 thru 4 V
I D
−
Drain Current (A)
100
80
60
40
20
2V
0
0.0
0.5
1.0
1.5
2.0
2.5
T
C
= 125_C
25_C
−55_C
3.0
3.5
4.0
140
120
Transfer Characteristics
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
2
SUR70N02-04P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
120
T
C
=
−55_C
r DS(on)
−
On-Resistance (
W
)
100
g fs
−
Transconductance (S)
80
60
40
20
0
0
10
20
30
40
50
25_C
125_C
0.006
0.005
0.004
0.003
0.002
0.001
0.000
0
20
40
60
80
100
V
GS
= 10 V
V
GS
= 4.5 V
0.007
Vishay Siliconix
On-Resistance vs. Drain Current
I
D
−
Drain Current (A)
6000
5000
C
−
Capacitance (pF)
4000
3000
2000
C
rss
1000
0
0
4
8
12
16
20
V
DS
−
Drain-to-Source Voltage (V)
C
oss
I
D
−
Drain Current (A)
10
V
DS
= 10 V
I
D
= 50 A
Capacitance
Gate Charge
V GS
−
Gate-to-Source Voltage (V)
C
iss
8
6
4
2
0
0
15
30
45
60
75
Q
g
−
Total Gate Charge (nC)
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 30 A
I S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
r DS(on)
−
On-Resistance (
W
)
(Normalized)
1.4
T
J
= 150_C
T
J
= 25_C
10
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
www.vishay.com
3
SUR70N02-04P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
40
New Product
1000
Limited
by r
DS(on)
100
I D
−
Drain Current (A)
Safe Operating Area
32
I D
−
Drain Current (A)
10, 100
ms
1 ms
10 ms
100 ms
1s
10 s
100 s
dc
24
10
16
1
8
0.1
T
A
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
T
A
−
Ambient Temperature (_C)
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
100
www.vishay.com
4
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
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