SUP60N10-16L
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
100
FEATURES
r
DS(on)
(W)
I
D
(A)
60
56
0.016 @ V
GS
= 10 V
0.018 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
PWM Optimized
APPLICATIONS
D
DC/DC Primary Side Switch
TO-220AB
D
G
DRAIN connected to TAB
G D S
Top View
SUP60N10-16L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Maximum Power
Dissipation
a
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
100
"20
60
35
100
40
80
150
b
- 55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (Free Air)
Junction-to-Case
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Symbol
R
thJA
R
thJC
Limit
62.5
1.0
Unit
_C/W
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
www.vishay.com
1
SUP60N10-16L
Vishay Siliconix
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 80 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
I
DSS
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
100
0.0125
0.014
0.016
0.018
0.030
0.040
S
W
100
V
1
3
"100
1
50
250
A
m
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 0.83
W
I
D
^
60 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 50 V, V
GS
= 10 V, I
D
= 60 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3820
450
210
73
15
20
1.5
12
90
55
130
25
135
85
195
ns
W
110
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/ms
,
m
I
F
= 60 A, V
GS
= 0 V
1.0
62
3.1
0.10
60
100
1.5
100
5
0.25
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
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Document Number: 71928
S-03600—Rev. B, 31-Mar-03
SUP60N10-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120
V
GS
= 10 thru 6 V
5V
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
90
120
Transfer Characteristics
80
60
60
40
T
C
= 125_C
20
25_C
- 55_C
30
4V
0
0
2
4
6
8
10
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
160
T
C
= - 55_C
r
DS(on)
- On-Resistance (
W
)
0.025
0.030
On-Resistance vs. Drain Current
g
fs
- Transconductance (S)
120
25_C
0.020
V
GS
= 4.5 V
V
GS
= 10 V
125_C
80
0.015
0.010
40
0.005
0
0
10
20
30
40
50
60
70
80
90
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
6000
10
Gate Charge
V
GS
- Gate-to-Source Voltage (V)
5000
C - Capacitance (pF)
C
iss
4000
8
V
DS
= 50 V
I
D
= 60 A
6
3000
4
2000
1000
C
rss
2
C
oss
0
0
20
40
60
80
100
0
0
10
20
30
40
50
60
70
80
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
Q
g
- Total Gate Charge (nC)
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SUP60N10-16L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
- On-Resistance (
W)
(Normalized)
2.0
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
1.5
10
T
J
= 150_C
T
J
= 25_C
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
130
125
I
D
= 10 mA
V
(BR)DSS
(V)
120
115
110
105
100
95
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (_C)
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Document Number: 71928
S-03600—Rev. B, 31-Mar-03
SUP60N10-16L
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
80
70
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
1000
100
10
ms
100
ms
10
Limited
by r
DS(on)
1000
Safe Operating Area
1 ms
10 ms
100 ms
dc
1
T
C
= 25_C
Single Pulse
T
C
- Ambient Temperature (_C)
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
www.vishay.com
5
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