New Product
SUP53P06-20
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 60
R
DS(on)
(Ω)
0.0195 at V
GS
= - 10 V
0.025 at V
GS
= - 4.5 V
TO-220AB
FEATURES
I
D
(A)
a
- 53
- 42
Q
g
(Typ.)
76 nC
• TrenchFET
®
Power MOSFET
• 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
S
G
DRAIN connected to TAB
G D S
Top View
Ordering Information:
SUP53P06-20-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Continuous Source-Drain Diode Current
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
AS
E
AS
I
S
I
D
Symbol
V
DS
V
GS
Limit
- 60
± 20
- 53
a
- 46.8
9.2
b
- 8.1
b
- 150
- 45
101
69
a
2.1
b
104.2
a
66.7
a
3.1
b
2.0
b
- 55 to 150
°C
W
mJ
A
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Case
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
33
0.98
Maximum
40
1.2
Unit
°C/W
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
www.vishay.com
1
New Product
SUP53P06-20
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 50 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 30 A
- 1.0
45
59
29
16
T
C
= 25 °C
- 69
- 150
- 1.5
68
120
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 2.0 V, R
L
= 2.0
Ω
I
D
≅
- 10 A, V
GEN
= - 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 55 A
V
DS
= - 30 V, V
GS
= - 4.5 V, I
D
= - 55 A
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
3500
390
290
76
38
16
19
5.2
10
7
70
40
15
15
110
60
ns
Ω
115
60
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 60 V, V
GS
= 0 V
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 30 A
V
GS
= - 4.5 V, I
D
= - 20 A
V
DS
= - 15 V, I
D
= - 50 A
20
- 120
0.016
0.020
0.0195
0.025
-1
- 60
68
- 5.2
-3
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
New Product
SUP53P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
200
V
GS
= 10 thru 6
V
160
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 5
V
120
80
100
60
80
V
GS
= 4
V
40
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0
40
V
GS
= 3
V
0
0
1
2
3
4
5
20
0
1
2
3
4
5
V
DS
- Drain-to-SourceVoltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
10
100
Transfer Characteristics
T
C
= - 55 °C
8
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
80
T
C
= 25 °C
60
T
C
= 125 °C
40
6
4
T
C
= 125 °C
2
T
C
= 25 °C
T
C
= - 55 °C
0
0
1
2
3
4
5
20
0
0
12
24
36
48
60
V
GS
- Gate-to-Source
Voltage
(V)
I
D
- Drain Current (A)
Transfer Characteristics
0.05
5000
Transconductance
R
DS(on)
- On-Resistance (Ω)
0.04
C - Capacitance (pF)
4000
C
iss
0.03
V
GS
= 4.5
V
0.02
V
GS
= 10
V
0.01
3000
2000
1000
C
oss
C
rss
0
10
20
30
40
50
60
0.00
0
20
40
60
80
100
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
Capacitance
www.vishay.com
3
New Product
SUP53P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
I
D
= 55 A
V
GS
- Gate-to-Source
Voltage
(V)
R
DS(on)
- On-Resistance
8
V
DS
= 20
V
V
DS
= 30
V
4
1.7
(Normalized)
2.0
I
D
= 20 A
V
GS
= 10
V
6
1.4
V
GS
= 4.5
V
1.1
2
0.8
0
0
20
40
60
80
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 20 A
0.08
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
0.06
10
0.04
T
J
= 150 °C
0.02
T
J
= 25 °C
1
0.0
0.00
0.3
0.6
0.9
1.2
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage
(V)
V
SD
- Source-to-Drain
Voltage
(V)
Source-Drain Diode Forward Voltage
1000
75
On-Resistance vs. Gate-to-Source Voltage
I
D
= 10 mA
72
100
V
(BR)DSS
- (V)
I
Dav
- (A)
69
10
66
I
AV
(A) at T
J
= 25 °C
1
63
I
AV
(A) at T
J
= 150 °C
0.1
0.0001
0.001
0.01
T
in
- (s)
0.1
1
60
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Single Pulse Avalanche Current Capability
vs. Time
Drain-Source Breakdown Voltage vs. Junction
Temperature
www.vishay.com
4
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
New Product
SUP53P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.8
60
50
0.5
I
D
- Drain Current (A)
V
GS(th)
Variance
(V)
I
D
= 250
µA
I
D
= 1 mA
40
0.2
30
20
- 0.1
10
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
J
- Temperature(°C)
Threshold Voltage
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Max. Drain Current vs. Case Temperature
1000
Limited
by
R
DS(on)
*
100
I
D
- Drain Current (A)
10
µs
Power (W)
100
µs
10
1 ms
10 ms
100 ms, DC
1
T
C
= 25 °C
Single Pulse
0.1
0.1
BVDSS
Limited
T
J
- Temperature (°C)
Power Derating, Junction-to-Case
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
0.2
0.1
0.1
0.02
Single Pulse
0.05
0.01
10
-4
10
-3
10
-2
Square
Wave
Pulse Duration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?68633.
Document Number: 68633
S-80897-Rev. A, 21-Apr-08
www.vishay.com
5
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