This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N10-8m2P
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
10
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
DS
= 15 V, I
D
= 20 A
Min.
100
2.5
Typ.
Max.
Unit
4.5
± 250
1
50
250
V
nA
µA
A
70
0.0067
0.0127
62
6290
0.0082
0.0170
S
V
GS
= 0 V, V
DS
= 50 V, f = 1 MHz
535
182
97
150
pF
V
DS
= 50 V, V
GS
= 10 V, I
D
= 85 A
f = 1 MHz
V
DD
= 50 V, R
L
= 0.588
I
D
85 A, V
GEN
= 10 V, R
g
= 1
0.28
32
25
1.4
23
17
34
9
2.8
35
26
52
18
nC
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
85
240
I
F
= 30 A, V
GS
= 0 V
I
F
= 75 A, di/dt = 100 A/µs
0.85
61
3
91
1.5
100
4.5
130
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74643
S12-0335-Rev. B, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N10-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
120
V
GS
= 10 thru 7
V
g
fs
- Transconductance (S)
180
100
I
D
- Drain Current (A)
150
T
C
= - 55 °C
80
120
T
C
= 25 °C
90
T
C
= 125 °C
60
60
6
V
40
20
5
V
0
0
1
2
3
4
V
DS
- Drain-to-Source
Voltage
(V)
5
30
0
0
12
24
36
48
60
I
D
- Drain Current (A)
Output Characteristics
100
0.05
Transconductance
I
D
= 20 A
R
DS(on)
- On-Resistance (Ω)
80
I
D
- Drain Current (A)
0.04
60
0.03
40
T
C
= 125 °C
T
C
= 25 °C
0.02
T
A
= 150 °C
0.01
T
A
= 25 °C
20
T
C
= - 55 °C
0
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
0.00
4.0
5.2
6.4
7.6
8.8
10
V
GS
- Gate-to-Source
Voltage
(V)
Transfer Characteristics
0.0073
8000
On-resistance vs. Gate-to-Source Voltage
C
iss
R
DS(on)
- On-Resistance (Ω)
0.0071
C - Capacitance (pF)
6400
0.0069
V
GS
= 10
V
4800
0.0067
3200
0.0065
1600
C
oss
0.0063
0
20
40
60
I
D
- Drain Current (A)
80
100
0
0
C
rss
20
40
60
80
100
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 74643
S12-0335-Rev. B, 13-Feb-12
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N10-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
0.2
2.0
V
GS
= 10
V
V
GS(th)
Variance
(V)
- 0.3
0.7
1.5
- 0.8
I
D
= 5 mA
- 1.3
I
D
= 250
µA
- 1.8
1.0
0.5
- 50
- 25
0
25
50
75
100
125
150
175
- 2.3
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
10
I
D
=
85
A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 50
V
V
DS
= 30
V
V
DS
= 70
V
6
124
V
(BR)DSS
(normalized)
130
I
D
= 1 mA
Threshold Voltage
118
4
112
2
106
0
0
22
44
66
88
110
Q
g
- Total Gate Charge (nC)
100
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
100
Drain Source Breakdown vs. Junction Temperature
140
10
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
I
D
- Drain Current (A)
112
Package Limited
84
1
0.1
56
0.01
28
0.001
0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain
Voltage
(V)
1.2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Source-Drain Diode Forward Voltage
Maximum Drain Current vs. Case Temperature
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Document Number: 74643
S12-0335-Rev. B, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N10-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
1000
*Limited
by
r
DS(on)
100
I
D
- Drain Current (A)
100
µs
I
DAV
(A)
T
J
= 150 °C
10
T
J
= 25 °C
10
1 ms
10 ms
100 ms
DC
T
C
= 25 °C
Single Pulse
1
1
10
-5
10
-4
10
-2
10
-3
t
AV
(sec)
10
-1
1
0.1
0.1
*V
GS
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
r
DS(on)
is specified
Single Pulse Avalanche Current Capability vs. Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?74643.
Document Number: 74643
S12-0335-Rev. B, 13-Feb-12
www.vishay.com
5
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