d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
For more information please contact:
pmostechsupport@vishay.com
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N03-2m2P
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 22 A
0.8
52
70.2
27
25
T
C
= 25 °C
90
200
1.2
78
105
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.625
I
D
24 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 0.555
I
D
27 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 32 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 29 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
12065
1725
970
171
81.5
34
29
1.4
18
11
70
10
55
180
55
12
2.1
27
17
105
15
83
270
83
18
ns
257
123
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 32 A
V
GS
= 4.5 V, I
D
= 29 A
V
DS
= 15 V, I
D
= 32 A
90
0.0018
0.0022
160
0.0022
0.0027
1.5
30
35
- 7.5
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For more information please contact:
pmostechsupport@vishay.com
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N03-2m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
90
V
GS
= 10 thru 4
V
75
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
2.4
3.0
60
1.8
45
1.2
T
C
= 125 °C
0.6
30
15
V
GS
= 2
V
0
0.0
0.5
1.0
1.5
V
GS
= 3
V
T
C
= 25 °C
0.0
- 55 °C
2.0
2.5
0
V
DS
- Drain-to-Source
Voltage
(V)
1
2
3
V
GS
- Gate-to-Source
Voltage
(V)
4
Output Characteristics
600
T
C
= 25 °C
500
G
fs
- Transcond
u
ctance (S)
T
C
= 125 °C
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.0030
Transfer Characteristics
0.0025
V
GS
= 4.5
V
0.0020
V
GS
= 10
V
0.0015
400
300
T
C
= - 55 °C
200
100
0
0
10
20
30
40
50
60
70
80
90
I
D
- Drain Current (A)
0.0010
0
15
30
45
60
75
90
I
D
- Drain Current (A)
Transconductance
15000
10
R
DS(on)
vs. Drain Current
I
D
= 32 A
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
12000
C - Capacitance (pF)
8
V
DS
= 15
V
6
C
iss
9000
6000
C
oss
3000
4
V
DS
= 24
V
2
0
0
C
rss
6
12
18
24
30
V
DS
- Drain-to-Source
Voltage
(V)
0
0
30
60
90
120
150
180
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N03-2m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.6
R
DS(on)
- On-Resistance (
N
ormalized)
V
GS
= 10
V,
I
D
= 32 A
V
GS
= 4.5
V,
I
D
= 29.8 A
1.4
I
S
- So
u
rce C
u
rrent (A)
10
100
1.2
1
T
J
= 150 °C
1.0
0.1
T
J
= 25 °C
0.8
0.01
0.6
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
T
J
- Junction Temperature (°C)
0.2
0.4
0.6
0.8
V
SD
- Source-to-Drain
Voltage
(V)
1
On-Resistance vs. Junction Temperature
0.004
I
D
= 32 A
R
DS(on)
- On-Resistance (Ω)
T
A
= 125 °C
0.003
2.4
2.8
Forward Diode Voltage vs. Temperature
I
D
= 250
µA
0.002
T
A
= 25 °C
0.001
1.2
V
GS(th)
(
V
)
10
2.0
1.6
0.000
0
2
4
6
8
V
GS
- Gate-to-Source
Voltage
(V)
0.8
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
R
DS(on)
vs. V
GS
vs. Temperature
1000
Limited by r
DS(on)
*
100
I
D
- Drain Current (A)
Threshold Voltage
100 µs
1 ms
10
10 ms
100 ms
1
0.1
1s
10 s
DC
0.01
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
*V
GS
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which r
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
For more information please contact:
pmostechsupport@vishay.com
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM90N03-2m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
300
300
250
Po
w
er Dissipation (
W
)
I
D
- Drain C
u
rrent (A)
250
200
200
150
Package Limited
100
150
100
50
50
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?74342
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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