SUM75N06-09L
New Product
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(W)
0.0093 @ V
GS
= 10 V
0.0135 @ V
GS
= 4.5 V
I
D
(A)
90
62
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
APPLICATIONS
D
12-V Automotive Systems
- Load Switch
- Motor Drive
- DC/DC
D
TO-263
G
DRAIN connected to TAB
G
D S
Top View
SUM75N06-09L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 100_C
I
D
I
DM
I
AR
E
AR
P
D
P
D
T
J
, T
stg
Symbol
V
DS
V
GS
Limit
60
"20
90
53
160
50
125
125
b
3.75
c
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount )
c
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72037
S-22123—Rev. A, 25-Nov-02
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
1.2
Unit
_C/W
_
1
SUM75N06-09L
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
Drain-Source On-State Resistance
a
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
r
DS(on)
V
GS
= 4.5 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
75
0.0105
75
0.0075
0.0093
0.0163
0.024
0.0135
0.0224
0.030
S
W
60
1
2
3
"100
1
50
150
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.4
W
I
D
]
90 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 90 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2400
430
210
47
12
13
7
30
25
12
12
50
40
20
ns
75
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/ms
m
I
F
= 90 A, V
GS
= 0 V
40
2
0.040
160
90
A
180
1.4
80
4
0.16
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72037
S-22123—Rev. A, 25-Nov-02
SUM75N06-09L
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
V
GS
= 10 thru 5 V
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
120
160
Vishay Siliconix
Transfer Characteristics
80
4V
80
40
3V
0
0
2
4
6
8
10
40
T
C
= 125_C
25_C
-55
_C
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
120
T
C
= -55_C
r
DS(on)
- On-Resistance (
W
)
100
g
fs
- Transconductance (S)
25_C
80
125_C
60
0.017
0.020
On-Resistance vs. Drain Current
0.014
0.011
V
GS
= 4.5 V
40
V
GS
= 10 V
0.008
20
0
0
10
20
30
40
50
60
0.005
0
20
40
60
80
100
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance
4000
20
Gate Charge
3200
C - Capacitance (pF)
C
iss
2400
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 30 V
I
D
= 75 A
12
1600
8
800
C
oss
C
rss
0
10
20
30
40
50
60
4
0
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
Document Number: 72037
S-22123—Rev. A, 25-Nov-02
Q
g
- Total Gate Charge (nC)
www.vishay.com
3
SUM75N06-09L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
- On-Resistance (
W)
(Normalized)
2.0
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
1.5
T
J
= 150_C
10
T
J
= 25_C
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
80
Drain Source Breakdown vs.
Junction Temperature
76
100
I
AV
(A) @ T
A
= 25_C
I
Dav
(a)
V
(BR)DSS
(V)
72
I
D
= 10 mA
10
68
1
64
I
AV
(A) @ T
A
= 150_C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
60
-50
-25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
- Junction Temperature (_C)
www.vishay.com
4
Document Number: 72037
S-22123—Rev. A, 25-Nov-02
SUM75N06-09L
New Product
THERMAL RATINGS
Vishay Siliconix
Maximum Avalanche Drain Current
vs. Case Temperature
90
1000
Safe Operating Area, Junction-to-Case
Limited
by r
DS(on)
75
100
I
D
- Drain Current (A)
60
I
D
- Drain Current (A)
10
ms
100
ms
45
10
1 ms
10 ms
dc, 100 ms
T
C
= 25_C
Single Pulse
30
1
15
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
- Case Temperature (_C)
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72037
S-22123—Rev. A, 25-Nov-02
www.vishay.com
5
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