SUM60N04-06T
New Product
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET with Sensing Diode
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
(W)
0.0055 @ V
GS
= 10 V
I
D
(A)
60
a
D
TrenchFETr Power MOSFETS Plus
Temperature Sensing Diode
D
175_C Junction Temperature
D
New Low Thermal Resistance Package
APPLICATIONS
D
D
2
PAK-5L
D
Automotive
D
Industrial
T
1
G
T
2
1 2 3 4 5
D
1
D
2
S
N-Channel MOSFET
G
D
T
1
S
T
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
d
_
Pulsed Drain Current
Continous Diode Current (Diode Conduction)
d
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
"20
60
a
60
a
250
60
a
60
a
180
200
c
3.75
d
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71746
S-05062—Rev. A, 12-Nov-01
www.vishay.com
PCB Mount
d
Symbol
R
thJA
R
thJC
Limit
40
0.75
Unit
_C/W
_
1
SUM60N04-06T
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 32 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 32 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 32 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 25 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 25 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 25 A, T
J
= 175_C
V
FD1
Sense Diode Forward Voltage
Sense Diode Forward Voltage Increase
Forward Transconductance
a
V
FD2
DV
F
g
fs
I
F
= 50
mA
I
F
= 25
mA
From I
F
= 25
mA
to I
F
= 50
mA
V
DS
= 15 V, I
D
= 20 A
655
600
30
35
120
0.0044
0.0055
0.0088
0.011
715
660
80
S
mV
W
40
2
"100
1
50
500
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 0.8
W
I
D
]
25 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 20 V, V
GS
= 10 V, I
D
= 25 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
6400
1100
630
115
35
35
15
150
60
80
20
210
85
110
ns
150
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 60 A, di/dt = 100 A/ms
m
I
F
= 60 A, V
GS
= 0 V
1.0
45
2.5
0.06
60
A
200
1.5
70
5
0.18
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 71746
S-05062—Rev. A, 12-Nov-01
SUM60N04-06T
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V
GS
= 10 thru 6 V
150
I
D
– Drain Current (A)
I
D
– Drain Current (A)
5V
150
200
Vishay Siliconix
Transfer Characteristics
100
100
T
C
= 125_C
50
25_C
–55_C
0
50
4V
3V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
200
T
C
= –55_C
25_C
120
r
DS(on)
– On-Resistance (
W
)
160
g
fs
– Transconductance (S)
0.006
0.008
On-Resistance vs. Drain Current
V
GS
= 10 V
0.004
125_C
80
0.002
40
0
0
20
40
60
80
100
120
0.000
0
20
40
60
80
100
120
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
10000
20
Gate Charge
8000
C – Capacitance (pF)
V
GS
– Gate-to-Source Voltage (V)
C
iss
16
V
GS
= 20 V
I
D
= 25 A
6000
12
4000
C
oss
2000
C
rss
0
0
4
8
12
16
20
8
4
0
0
50
100
150
200
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71746
S-05062—Rev. A, 12-Nov-01
Q
g
– Total Gate Charge (nC)
www.vishay.com
3
SUM60N04-06T
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 25 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.6
I
S
– Source Current (A)
100
Source-Drain Diode Forward Voltage
1.2
T
J
= 150_C
10
T
J
= 25_C
0.8
0.4
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
55
Drain Source Breakdown vs.
Junction Temperature
I
D
= 250
mA
52
100
I
Dav
(a)
I
AV
(A) @ T
A
= 150_C
10
V
(BR)DSS
(V)
49
46
I
AV
(A) @ T
A
= 25_C
1
43
0.1
0.00001
0.0001
0.001
0.01
0.1
1
40
–50
–25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
– Junction Temperature (_C)
Sense Diode Forward Voltage vs. Temperature
1.0
0.01
Sense Diode Forward Voltage
0.8
I
D
= 50
mA
0.6
I
F
(V)
I
D
= 25
mA
0.4
0.00001
0.2
T
J
= 25_C
I
F
(V)
0.0001
0.001
T
J
= 150_C
0.0
0
25
50
75
100
125
150
0.000001
0
0.25
0.5
0.75
V
F
(V)
Document Number: 71746
S-05062—Rev. A, 12-Nov-01
1.0
1.25
1.5
T
J
– Junction Temperature (_C)
www.vishay.com
4
SUM60N04-06T
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
Limited
by r
DS(on)
1000
Vishay Siliconix
Safe Operating Area
10
ms
100
ms
I
D
– Drain Current (A)
I
D
– Drain Current (A)
100
1 ms
10 ms
10
100 ms
dc
1
T
C
= 25_C
Single Pulse
T
C
– Case Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
Square Wave Pulse Duration (sec)
10
–1
1
3
Document Number: 71746
S-05062—Rev. A, 12-Nov-01
www.vishay.com
5
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