SUM36N20-54P
Vishay Siliconix
N-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
200
R
DS(on)
()
0.053 at V
GS
= 15 V
0.054 at V
GS
= 10 V
I
D
(A)
36
36
Q
g
(Typ.)
57
FEATURES
•
•
•
•
TrenchFET
®
Power MOSFETs
175 °C Junction Temperature
100 % R
g
and UIS Tested
Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
APPLICATIONS
• Power Supply
• Lighting Systems
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
Ordering Information:
SUM36N20-54P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 100 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
200
± 25
36
22.6
80
20
20
166
b
3.12
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Symbol
R
thJA
R
thJC
Limit
40
0.75
Unit
°C/W
Document Number: 74295
S10-1053-Rev. C, 03-May-10
www.vishay.com
1
SUM36N20-54P
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= 200 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 200 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
10
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 15 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 100 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 150 °C
Forward
Transconductance
a
b
Symbol
Test Conditions
Min.
200
2.5
Typ.
Max.
Unit
4.5
± 100
± 300
1
25
250
V
nA
µA
A
40
0.044
0.0435
0.054
0.053
0.098
0.130
25
3100
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
t
a
t
b
V
DS
= 15 V, I
D
= 20 A
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 100 V, V
GS
= 15 V, I
D
= 50 A
V
DS
= 100 V, V
GS
= 10 V, I
D
= 50 A
f = 1 MHz
V
DD
= 100 V, R
L
= 2
I
D
50 A, V
GEN
= 10 V, R
g
= 1
300
135
85
57
14
20
1.2
16
170
27
9
2
25
260
42
18
36
80
127
85
pF
nC
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
Fall Time
c
c
c
Turn-Off Delay Time
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
A
V
ns
A
µC
nS
I
F
= 20 A, V
GS
= 0 V
0.86
116
9
1.5
175
14
0.8
I
F
= 40 A, dI/dt = 100 A/µs
0.53
84
32
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 74295
S10-1053-Rev. C, 03-May-10
SUM36N20-54P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 15
V,
12
V,
10
V, 8 V
80
I
D
- Drain Current (A)
6
V
60
I
D
- Drain Current (A)
64
80
48
T
C
= 125 °C
32
40
20
5
V
0
0
3
6
9
12
15
16
25 °C
- 55 °C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
120
T
C
= - 55 °C
0.060
25 °C
80
R
DS(on)
- On Resistance (Ω)
0.065
Transfer Characteristics
100
g
fs
- Transconductance (S)
0.055
V
GS
= 10
V
0.050
V
GS
= 15
V
0.045
60
125 °C
40
20
0
0
10
20
30
40
50
60
0.040
0
16
32
48
64
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.18
I
D
= 20 A
0.15
R
DS
- On-Resistance (Ω)
C - Capacitance (pF)
3360
4200
On-Resistance vs. Drain Current
C
iss
0.12
2520
0.09
T
J
= 125 °C
1680
0.06
T
J
= 25 °C
0.03
0
3
6
9
12
15
840
C
rss
C
oss
0
0
20
40
60
80
100
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
Capacitance
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Document Number: 74295
S10-1053-Rev. C, 03-May-10
SUM36N20-54P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
V
DS
= 50
V,
100
V
I
D
= 50 A
12
R
DS(on)
- On-Resistance
(Normalized)
2.4
2.9
I
D
= 20 A
V
GS
= 10
V
V
GS
- Gate-to-Source
Voltage
(V)
9
1.9
V
GS
= 15
V
6
1.4
3
0.9
0
0
16
32
48
64
80
96
0.4
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.7
On-Resistance vs. Junction Temperature
10
I
S
- Source Current (A)
T
J
=150 °C
1
T
J
= 25 °C
0.1
V
GS(th)
V
ariance (
V
)
0.2
I
D
= 5 mA
- 0.3
- 0.8
I
D
= 250
µA
- 1.3
0.01
- 1.8
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 2.3
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
250
I
D
= 10 mA
240
V
(BR)VDSS (normalized)
150 °C
I
Dav
A
100
Threshold Voltage
230
25 °C
10
220
210
200
1
0.00001
190
- 50
- 25
0
25
50
75
100
125
150
175
0.0001
0.001
t
av
- (s)
0.01
0.1
T
J
- Temperature Junction (°C)
Drain Source Breakdown vs.
Junction Temperature
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Single Pulse Avalanche
Current Capability vs. Time
Document Number: 74295
S10-1053-Rev. C, 03-May-10
SUM36N20-54P
Vishay Siliconix
THERMAL RATINGS
40
100
Limited
by
R
DS (on)
*
32
I
D
- Drain C
u
rrent (A)
100
µs
I
D
- Drain Current (A)
10
24
1 ms
1
T
C
= 25 °C
Single Pulse
16
10 ms
100 ms
DC
8
0
0
25
50
75
100
125
150
0.1
0.1
T
C
- Case Temperature (°C)
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
>
minimum
V
GS
at
which
R
DS (on)
is specified
1000
Maximum Drain Curent vs. Case Temperature
1
Duty Cycle = 0.5
N
ormalized Effecti
v
e Transient
Thermal Impedance
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square
Wave
Pulse Duration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?74295.
Document Number: 74295
S10-1053-Rev. C, 03-May-10
www.vishay.com
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