SUM110N06-3m4L
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(Ω)
0.0034 at V
GS
= 10 V
0.0041 at V
GS
= 4.5 V
I
D
(A)
110
a
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
RoHS
COMPLIANT
D
TO-263
G
G
D S
S
Top View
Ordering Information:
SUM110N06-3m4L-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
60
± 20
110
a
110
a
440
75
280
375
b
3.75
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
PCB Mount
c
Symbol
R
thJA
R
thJC
Typical
40
0.4
Unit
°C/W
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
www.vishay.com
1
SUM110N06-3m4L
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Rise
Time
c
Time
c
c
c
Symbol
Test Conditions
Min.
60
1
Typ.
Max.
Unit
3
± 100
1
50
10
V
nA
µA
mA
A
120
0.0028
0.0033
0.0034
0.0041
0.0055
0.007
30
12900
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15 V, I
D
= 30 A
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1060
700
200
300
pF
V
DS
= 30 V, V
GS
= 10 V, I
D
= 110 A
f = 1.0 MHz
V
DD
= 30 V, R
L
= 0.4
Ω
I
D
≅
110 A, V
GEN
= 10 V, R
g
= 2.5
Ω
0.65
50
33
1.3
22
130
110
280
2
35
200
165
420
110
440
1.0
55
3.6
0.1
1.5
82
5.4
0.22
nC
Ω
Turn-On Delay Time
c
Turn-Off Delay
Fall Time
c
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
I
S
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 110 A, di/dt = 100 A/µs
I
F
= 110 A, V
GS
= 0 V
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
SUM110N06-3m4L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
250
V
GS
= 10 thru 5
V
4
V
200
I
D
- Drain Current (A)
I
D
- Drain Current (A)
200
250
150
150
100
100
T
C
= 125 °C
50
25 °C
- 55 °C
50
3
V
2
V
0
0
2
4
6
8
10
0
0
1
2
3
4
5
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
480
T
C
= - 55 °C
400
g
fs
- Transconductance (S)
25 °C
320
125 °C
240
r
DS(on)
- On-Resistance (Ω)
0.005
0.006
Transfer Characteristics
0.004
V
GS
= 4.5
V
0.003
V
GS
= 10
V
0.002
160
80
0.001
0
0
20
40
60
80
100
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
18000
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source
Voltage
(V)
15000
C - Capacitance (pF)
C
iss
16
V
GS
= 30
V
I
D
= 110 A
12000
12
9000
8
6000
C
oss
C
rss
0
5
10
15
20
25
30
35
40
3000
4
0
0
0
50
100
150
200
250
300
350
400
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
www.vishay.com
3
SUM110N06-3m4L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.3
V
GS
= 10
V
I
D
= 30 A
I
S
- Source Current (A)
100
2.0
r
DS(on)
- On-Resistance
(Normalized)
1.7
T
J
= 150 °C
10
T
J
= 25 °C
1.4
1.1
0.8
0.5
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
1000
74
72
100
I
Dav
(A)
I
AV
(A) at T
A
= 25 °C
V
(BR)DSS
(V)
Source-Drain Diode Forward Voltage
I
D
= 10 mA
70
68
66
64
62
10
1
I
AV
(A) at T
A
= 150 °C
0.1
0.00001
0.0001
0.001
t
in
(s)
0.01
0.1
1
60
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
www.vishay.com
4
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
SUM110N06-3m4L
Vishay Siliconix
THERMAL RATINGS
300
1000
10
µs
250
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
200
100
µs
10
Limited
by
r
DS(on)*
150
100
Package Limited
50
1 ms
10 ms
100 ms
DC
T
C
= 25 °C
Single Pulse
1
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
- Case Temperature (°C)
*
V
GS
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
r
DS(on)
is specified
Maximum Drain Current
vs. Case Temperature
2
1
Normalized
Effective Transient
Thermal Impedance
Safe Operating Area
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square
Wave
Pulse Duration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?73036.
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
