SUM110N03-03
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
FEATURES
r
DS(on)
(W)
I
D
(A)
a
D
D
D
D
D
0.0025 @ V
GS
= 10 V
110
a
TrenchFETr Power MOSFET
175_C Junction Temperature
Low Thermal Resistance Package
High Threshold Voltage
APPLICATIONS
D
Automotive 12-V Boardnet
TO-263
G
DRAIN connected to TAB
G
D S
S
Ordering Information: SUM110N03-03
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energy
b
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
110
a
110
a
350
70
245
242
c
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Symbol
R
thJA
R
thJC
Limit
40
0.62
Unit
_C/W
Document Number: 72260
S-31257—Rev. A, 16-Jun-03
www.vishay.com
1
SUM110N03-03
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 24 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
15
120
0.002
0.0025
0.0037
0.0044
S
W
30
V
2.5
4.5
"100
1
50
250
A
m
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
b
Gate-Source Charge
b
Gate-Drain Charge
b
Turn-On Delay Time
b
Rise Time
b
Turn-Off Delay Time
b
Fall Time
b
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.18
W
I
D
^
110 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 110 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
12500
1650
970
170
57
30
20
125
70
25
35
190
105
40
ns
250
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM
Q
rr
I
F
= 50 A, di/dt = 100 A/ms
m
I
F
= 50 A, V
GS
= 0 V
0.9
70
3
0.1
110
350
1.5
140
4.5
0.31
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
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Document Number: 72260
S-31257—Rev. A, 16-Jun-03
SUM110N03-03
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 6 V
200
I
D
- Drain Current (A)
I
D
- Drain Current (A)
200
250
Vishay Siliconix
Transfer Characteristics
150
5V
100
150
100
T
C
= 125_C
50
25_C
50
3V
0
0
1
2
3
4
5
4V
- 55_C
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
280
240
T
C
= - 55_C
g
fs
- Transconductance (S)
200
125_C
160
120
80
40
0
0
20
40
60
80
100
120
0.000
0
0.004
On-Resistance vs. Drain Current
r
DS(on)
- On-Resistance (
W
)
25_C
0.003
0.002
V
GS
= 10 V
0.001
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
16000
C
iss
C - Capacitance (pF)
12000
20
Gate Charge
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 15 V
I
D
= 110 A
12
8000
8
4000
C
oss
C
rss
0
0
5
10
15
20
25
30
4
0
0
70
140
210
280
350
V
DS
- Drain-to-Source Voltage (V)
Document Number: 72260
S-31257—Rev. A, 16-Jun-03
Q
g
- Total Gate Charge (nC)
www.vishay.com
3
SUM110N03-03
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.8
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
- On-Resistance (
W)
(Normalized)
I
S
- Source Current (A)
1.5
100
Source-Drain Diode Forward Voltage
T
J
= 150_C
10
T
J
= 25_C
1.2
0.9
0.6
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
40
Drain Source Breakdown vs.
Junction Temperature
38
100
V
(BR)DSS
(V)
I
Dav
(a)
36
I
D
= 1 mA
I
AV
(A) @ T
A
= 25_C
10
34
1
I
AV
(A) @ T
A
= 150_C
32
0.1
0.00001
0.0001
0.001
0.01
0.1
1
30
- 50
- 25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
- Junction Temperature (_C)
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Document Number: 72260
S-31257—Rev. A, 16-Jun-03
SUM110N03-03
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
120
1000
10
ms
100
ms
Vishay Siliconix
Safe Operating Area
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Limited by r
DS(on)
100
80
1 ms
10
10 ms
100 ms, dc
60
40
1
20
T
A
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
- Ambient Temperature (_C)
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square Wave Pulse Duration (sec)
10
-1
1
Document Number: 72260
S-31257—Rev. A, 16-Jun-03
www.vishay.com
5
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