SUD50P04-15
New Product
Vishay Siliconix
P-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
–40
r
DS(on)
(W)
0.015 @ V
GS
= –10 V
0.023 @ V
GS
= –4.5 V
I
D
(A)
–50
–45
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50P04-15
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–40
"20
–50
–40
Unit
V
A
–150
–50
100
b
3
a
–55 to 175
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
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FaxBack 408-970-5600
t
v
10 sec.
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
1
SUD50P04-15
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –40 V, V
GS
= 0 V
V
DS
= –40 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –30 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –10 V, I
D
= –30 A, T
J
= 125_C
V
GS
= –4.5 V, I
D
= –20 A
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –30 A
20
0.018
–120
0.012
0.015
0.024
0.023
S
W
–40
V
–1.0
"100
–1
–50
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –20 V, R
L
= 0 4
W
20 V,
0.4
I
D
^
–50 A, V
GEN
= –10 V R
G
= 2 5
W
50 A
10 V,
2.5
V
DS
= –20 V V
GS
= –10 V I
D
= –50 A
20 V,
10 V,
50
V
GS
= 0 V, V
DS
= –25 V, f = 1 MHz
5400
640
300
85
25
15
15
380
75
140
25
580
ns
115
210
130
nC
C
pF
F
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
a
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= –50 A, V
GS
= 0 V
I
F
= –50 A, di/dt = 100 A/ms
–1.2
40
–150
–1.5
80
A
V
ns
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 71176
S-00830—Rev. A, 24-Apr-00
SUD50P04-15
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10, 9, 8 V
200
I
D
– Drain Current (A)
I
D
– Drain Current (A)
7V
6V
80
25_C
150
5V
100
60
125_C
T
C
= –55_C
100
Vishay Siliconix
Transfer Characteristics
40
50
4V
2, 3 V
20
0
0
2
4
6
8
10
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
80
T
C
= –55_C
25_C
g
fs
– Transconductance (S)
60
r
DS(on)
– On-Resistance (
Ω
)
125_C
0.03
0.04
On-Resistance vs. Drain Current
V
GS
= 4.5 V
40
0.02
V
GS
= 10 V
0.01
20
0
0
20
40
60
80
100
0
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
8000
20
Gate Charge
V
GS
– Gate-to-Source Voltage (V)
6000
C – Capacitance (pF)
C
iss
16
V
DS
= 20 V
I
D
= 50 A
12
4000
8
2000
C
oss
C
rss
4
0
0
5
10
15
20
25
30
0
0
40
80
120
160
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
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FaxBack 408-970-5600
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SUD50P04-15
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
2.0
I
S
– Source Current (A)
100
Source-Drain Diode Forward Voltage
1.5
T
J
= 150_C
T
J
= 25_C
10
1.0
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
60
500
Safe Operating Area
50
I
D
– Drain Current (A)
I
D
– Drain Current (A)
100
Limited
by r
DS(on)
10
ms
100
ms
40
30
10
1 ms
10 ms
100 ms
dc
T
C
= 25_C
Single Pulse
20
1
10
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
– Case Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
t
1
0.02
0.05
Single Pulse
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 40_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
30
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Document Number: 71176
S-00830—Rev. A, 24-Apr-00
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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