* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72243
S-71660-Rev. B, 06-Aug-07
www.vishay.com
1
t
≤
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.82
Maximum
18
50
1.1
°C/W
Unit
New Product
SUD50P04-09L
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 32 V, V
GS
= 0 V
V
DS
= - 32 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= - 32 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 24 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 10 V, I
D
= - 50 A, T
J
= 125 °C
V
GS
= - 10 V, I
D
= - 50 A, T
J
= 175 °C
V
GS
= - 4.5 V, I
D
= - 18 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
b
a
Symbol
Test Conditions
Min
- 40
-1
Typ
Max
Unit
-3
± 100
-1
- 50
- 150
V
nA
µA
A
- 50
0.0075
0.0094
0.014
0.017
0.0115
73
4800
0.0145
Ω
g
fs
V
DS
= - 5 V, I
D
= - 24 A
S
V
GS
= 0 V, V
DS
= - 25 V, f = 1 MHz
700
550
102
150
pF
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 50 A
18.5
27
10
15
90
220
220
- 50
- 100
nC
V
DD
= - 20 V, R
L
= 0.4
Ω
I
D
≅
- 50 A, V
GEN
= - 10 V, R
G
= 6
Ω
60
145
140
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
S
I
SM
V
SD
t
rr
A
V
ns
I
F
= - 50 A, V
GS
= 0 V
I
F
= - 50 A, di/dt = 100 A/µs
- 1.0
55
- 1.5
85
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg?72243.
www.vishay.com
4
Document Number: 72243
S-71660-Rev. B, 06-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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