SUD50N06-07L_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RT1
RT2
RT3
RT4
Junction to
CT1
CT2
CT3
CT4
Ambient
N/A
N/A
N/A
N/A
Ambient
N/A
N/A
N/A
N/A
Case
155.4023 m
460.1482 m
284.0411 m
200.4084 m
Case
1.7621 m
6.2310 m
15.7188 m
35.2003 m
Foot
N/A
N/A
N/A
N/A
Foot
N/A
N/A
N/A
N/A
Thermal Capacitance (Joules/°C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 69605
Revision: 10-Sep-07
www.vishay.com
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SUD50N06-07L_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
RF1
RF2
RF3
RF4
Junction to
CF1
CF2
CF3
CF4
Note: NA indicates not applicable
Ambient
N/A
N/A
N/A
N/A
Ambient
N/A
N/A
N/A
N/A
Case
394.3166 m
526.5395 m
169.5432 m
9.6007 m
Case
1.3330 m
4.4711 m
2.3116 m
72.2291 m
Foot
N/A
N/A
N/A
N/A
Foot
N/A
N/A
N/A
N/A
Thermal Capacitance (Joules/°C)
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com
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Document Number: 69605
Revision: 10-Sep-07
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