b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69732
S-80109-Rev. B, 21-Jan-08
New Product
SUD50N04-37P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10 thru 5
V
4
V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
18
3
T
C
= 25 °C
2
12
6
3
V
0
0.0
1
T
C
= 125 °C
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
T
C
= - 55 °C
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.060
800
Transfer Characteristics
C
iss
r
DS(on)
- On-Resistance (Ω)
0.052
C - Capacitance (pF)
640
0.044
V
GS
= 4.5
V
0.036
V
GS
= 10
V
0.028
480
320
C
oss
160
C
rss
0
6
12
18
24
30
0.020
0
6
12
18
24
30
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 5 A
V
GS
- Gate-to-Source
Voltage
(V)
8
r
DS(on)
- On-Resistance
V
DS
= 20
V
6
V
DS
= 30
V
4
V
DS
= 10
V
1.8
I
D
= 5 A
1.6
Capacitance
V
GS
= 10
V
1.4
(Normalized)
V
GS
= 4.5
V
1.2
1.0
2
0.8
0
0.0
2.5
5.0
7.5
10.0
12.5
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 69732
S-80109-Rev. B, 21-Jan-08
On-Resistance vs. Junction Temperature
www.vishay.com
3
New Product
SUD50N04-37P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
T
J
= 150 °C
r
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 25 °C
1
0.16
0.20
I
D
= 5 A
0.12
0.1
0.08
T
A
= 125 °C
0.04
T
A
= 25 °C
0.01
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
100
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
I
D
= 5 mA
I
D
= 250
µA
80
0.0
Power (W)
- 25
0
25
50
75
100
125
150
60
- 0.2
40
- 0.4
20
- 0.6
- 0.8
- 50
0
0.0001
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
100
Single Pulse Power, Junction-to-Ambient
80
10
I
D
- Drain Current (A)
Power (W)
Limited
by
r
DS(on)
*
100
µs
1
1 ms
10 ms
100 ms
0.1
10 s
DC
T
A
= 25 °C
Single Pulse
60
40
20
0
0.0001
0.001
0.01
Time (s)
0.1
1
0.01
0.01
0.1
1
10
100
Single Pulse Power, Junction-to-Case
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
r
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69732
S-80109-Rev. B, 21-Jan-08
New Product
SUD50N04-37P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
7
Limited
by
r
DS(on)
*
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
100
µs
5
4
1
1 ms
10 ms
100 ms, DC
3
0.1
T
C
= 25 °C
Single Pulse
0.01
0.01
1
0
0.1
1
10
100
0
25
50
75
100
125
150
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
r
DS(on)
is specified
T
A
- Ambient Temperature (°C)
Safe Operating Area, Junction-to-Case
15
2.5
Current Derating*, Junction-to-Ambient
12
I
D
- Drain Current (A)
2.0
6
Power (W)
75
100
125
150
9
Package Limited
1.5
1.0
3
0.5
0
0
25
50
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Current Derating*, Junction-to-Case
15
Power Derating*, Junction-to-Ambient
12
Power (W)
9
6
3
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using
0
0
25
50
75
100
125
150
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
便携式数字数据采集系统（PDDAS）使用了LabVIEW实时模块和PXI，以控制风洞测试和采集记录来自128个不同通道的空气压力数据 "通过LabVIEW实时模块，可以在各种操作情况下获得采集空气压力数据及向风洞提供反馈控制信号所需的确定性响应时间。" – Dave Scheibenhoffer, G Systems 挑战: 用一个可采集、分析和存储来自下一代喷气式战斗机引擎设计的动...[详细]
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