d. Maximum under steady state conditions is 50 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
S15-1599-Rev. B, 06-Jul-15
Document Number: 69796
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD35N10-26P
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs, T
J
= 25 °C
I
S
= 10 A
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.8
50
100
38
12
50
40
1.2
75
150
-
-
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
= 12 A
V
DS
= 12 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
2000
180
60
31
10
9
1.5
10
10
15
10
-
-
-
47
-
-
-
15
15
25
15
ns
Ω
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12 A
V
GS
= 7 V, I
D
= 8 A
V
DS
= 15 V, I
D
= 12 A
100
-
-
2.5
-
-
-
40
-
-
-
-
165
-11
-
-
-
-
-
0.0210
0.0285
25
-
-
-
4.4
± 100
1
10
-
0.0260
0.0375
-
V
mV/°C
V
nA
μA
A
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Note
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1599-Rev. B, 06-Jul-15
Document Number: 69796
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD35N10-26P
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 7 V
I
D
- Drain Current (A)
30
V
GS
= 6 V
20
Vishay Siliconix
10
T
C
= - 55 °C
8
I
D
- Drain Current (A)
T
C
= 25 °C
6
4
T
C
= 125 °C
2
10
V
GS
= 4 V
0
0.0
V
GS
= 5 V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
V
DS
- Drain-to-Source Voltage (V)
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
6
Output Characteristics
0.023
2500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
2000
0.022
V
GS
= 10 V
C - Capacitance (pF)
C
iss
1500
1000
0.021
500
C
rss
0.020
0
10
20
I
D
- Drain Current (A)
30
40
0
0
C
oss
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 50 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 12 A
V
GS
- Gate-to-Source Voltage (V)
8
Capacitance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 50
I
D
= 12 A
V
GS
= 10 V
6
V
DS
= 80 V
4
2
0
0
5
10
15
20
25
30
35
Q
g
- Total Gate Charge (nC)
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
S15-1599-Rev. B, 06-Jul-15
On-Resistance vs. Junction Temperature
Document Number: 69796
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD35N10-26P
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.08
I
D
= 12 A
R
DS(on)
- On-Resistance (Ω)
0.06
T
A
= 125 °C
0.04
T
A
= 25 °C
Vishay Siliconix
I
S
- Source Current (A)
T
J
= 150 °C
10
T
J
= 25 °C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
R
DS(on)
vs. V
GS
vs. Temperature
200
4.5
4.0
I
D
= 250 µA
150
Power (W)
3.5
V
GS(th)
(V)
3.0
100
2.5
50
2.0
1.5
- 50
- 25
0
25
50
75
100
125
150
175
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
100 µs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
10 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
S15-1599-Rev. B, 06-Jul-15
Document Number: 69796
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD35N10-26P
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
80
Vishay Siliconix
Power Dissipation (W)
30
I
D
- Drain Current (A)
60
20
40
10
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1599-Rev. B, 06-Jul-15
Document Number: 69796
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
