SU200-01A-TO
SU200-01A-SM
Large Area InGaAs APDs
The largest commercially available InGaAs APD,
the SU200-01A is ideal for 1.25 Gbps free space
optical
communications
Tomography.
laser
range-finding
packaging
applications, OTDR and high resolution Optical
Coherence
Standard
choices are a 5 pin TO-46 header package with
BK7 window or die mounted on a 800 x 850 µm
ceramic submount.
APPLICATIONS
Free Space Optical Communications
LADAR/LIDAR range finding
Optical Time Domain Reflectometry
Optical Coherence Tomography
FEATURES
Large, 200 µm active diameter
Typical bandwidth over 1 GHz
Over 70% QE from 1000 to 1650 nm
Available in hermetically sealed 5 pin
TO-46 package or on submount
V
bd
, I
d
over temperature
48
47
46
45
44
43
42
41
40
0
20
40
Temperature (C)
Vbd:
60
80
1.E-09
1.E-08
1.E-07
1.E-06
Dark Current at V
bd
- 1 (A)
Breakdown Voltage (V)
NEP vs gain & temperature
1.E-05
7E-13
6E-13
5E-13
NEP (W/
Hz)
4E-13
3E-13
2E-13
1E-13
0
0
M=12.5
20
M=10
40
Temperature (C)
M=7.5
60
M=5
80
M=2.5
Id @ Vbd-1
3490 U.S. Route 1
Princeton, New Jersey 08540
Phone: (609) 520-0610
Fax: (609) 520-0638
www.sensorsinc.com
info@sensorsinc.com
Doc. No. 4110-0043 Rev. D
Sensors Unlimited, Inc. reserves the right to make product design or specification changes without notice, ©2004.
Effective Date: 03-Mar-05
SU200-01A-TO
SU200-01A-SM
Parameter
Active Diameter
APD Breakdown Voltage
APD Capacitance
APD Gain Factor
APD Responsivity
Bandwidth (-3 dB)
Dark Current
Ionization Ratio
Series Resistance
SPECIFICATIONS
(V
SUPPLY
= 3.3 V, T
c
= 25 V
APD
= V
bd
-1
, =15 n
C,
V λ 50 m)
Test Conditions
-
I
d
= 10 µA
F = 1 MHz
-
-
M=10
-
-
dV(i = 7 mA, i = 4 mA)
Symbol
D
V
bd
C
M
R
BW
I
d
k αβ
=/
R
o
Min
-
40
10
8
5
-
-
-
-
Typ
200
50
-
10
8
1
150
0.4
-
Max
-
60
2500
-
-
200
-
60
Unit
m
V
fF
A/W
GHz
nA
Ώ
ABSOLUTE RATINGS
Parameter
Forward Current
Operating Case Temperature Range
Optical Input Power @ V
APD
Reverse Current
Storage Case Temperature Range
Symbol
I
f
T
op
P
IN
I
r
T
stg
Min
-
0
-
-
-40
Typ
-
-
-
-
-
Max
10
85
-7
1.6
85
Unit
mA
C
dBm
mA
C
DIMENSIONS: mm [inch]
PIN
FUNCTION
TO
PACKAGE
1
2
3
4
5
APD Anode
NC
APD Cathode
NC
GND
SILICA
SUBMOUNT
NOTES:
ALL DIMENSIONS: mm [ INCH ]
SUBMOUNT PADS HAVE 500 nm OVERLAY
OF 99.999% Au
BACK-ILLUMINATED PHOTODIODE BUMP
BONDED TO SUBMOUNT
BACKSIDE COATED WITH 1550 nm AR
COATING
APD DIAMETER: 200 µm
CAUTION:
ELECTROSTATIC DISCHARGE SENSITIVE
SOLDERING TEMPERATURE SHOULD
NOT EXCEED 260°C FOR MORE THAN
10 SECONDS
ORDERING INFORMATION:
SU200-01A-TO
InGaAs APD photodiode with 200
active diameter. in TO-46 package
m
SU200-01A-SM
InGaAs APD photodiode with 200
active diameter. on silica submount
m
3490 U.S. Route 1
Princeton, New Jersey 08540
Phone: (609) 520-0610
Fax: (609) 520-0638
www.sensorsinc.com
info@sensorsinc.com
Doc. No. 4110-0043 Rev. D
Sensors Unlimited, Inc. reserves the right to make product design or specification changes without notice, ©2004.
Effective Date: 03-Mar-05
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