DISCRETE SEMICONDUCTORS
DATA SHEET
M3D082
BRY39
Programmable unijunction
transistor/
Silicon controlled switch
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 24
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
FEATURES
•
Silicon controlled switch
•
Programmable unijunction
transistor.
APPLICATIONS
•
Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
4
3
kg
MSB028
BRY39
PINNING
PIN
1
2
3
4
cathode
cathode gate
anode gate (connected to case)
anode
DESCRIPTION
handbook, halfpage
a
ag
1
book, halfpage
2
DESCRIPTION
Silicon planar PNPN switch or trigger
device in a TO-72 metal package.
It is an integrated PNP/NPN transistor
pair with all electrodes accessible.
k
MGL168
Fig.1 Simplified outline (TO-72) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Silicon controlled switch
PNP TRANSISTOR
V
EBO
V
CBO
I
ERM
P
tot
T
j
V
AK
I
H
t
on
t
off
V
GA
I
A
T
j
I
p
emitter-base voltage
open collector
−70
70
−2.5
275
150
1.4
1
0.25
15
V
NPN TRANSISTOR
collector-base voltage
repetitive peak emitter current
total power dissipation
junction temperature
forward on-state voltage
holding current
turn-on time
turn-off time
open emitter
T
amb
≤
25
°C
I
A
= 50 mA; I
AG
= 0; R
KG-K
= 10 kΩ
I
AG
= 10 mA; V
BB
=
−2
V; R
KG-K
= 10 kΩ
V
A
mW
°C
V
mA
µs
µs
Programmable unijunction transistor
gate-anode voltage
anode current (DC)
junction temperature
peak point current
V
S
= 10 V; R
G
= 10 kΩ
T
amb
≤
25
°C
70
175
150
0.2
V
mA
°C
µA
1997 Jul 24
2
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
P
tot
T
stg
T
j
T
amb
V
CBO
PARAMETER
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
T
amb
≤
25
°C
−
−65
−
−65
MIN.
BRY39
MAX.
275
+200
150
+150
UNIT
mW
°C
°C
°C
Silicon controlled switch
collector-base voltage
PNP
NPN
V
CER
collector-emitter voltage
PNP
NPN
V
CEO
collector-emitter voltage
PNP
NPN
V
EBO
emitter-base voltage
PNP
NPN
I
C
collector current (DC)
PNP
NPN
I
CM
peak collector current
PNP
NPN
I
E
emitter current (DC)
PNP
NPN
I
ERM
repetitive peak emitter current
PNP
NPN
Programmable unijunction transistor
V
GA
I
A
gate-anode voltage
anode current (AV)
T
amb
≤
25
°C
−
−
70
175
V
mA
t
p
= 10
µs; δ
= 0.01
−
−
2.5
−2.5
A
A
−
−
175
−175
mA
mA
note 2
−
−
−
175
mA
note 1
−
−
−
175
mA
open collector
−
−
−70
5
V
V
open base
−
−
−70
−
V
V
R
BE
= 10 kΩ
−
−
−
70
V
V
open emitter
−
−
−70
70
V
V
1997 Jul 24
3
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
SYMBOL
I
ARM
I
ASM
dI
A
/dt
Notes
1. Provided the I
E
rating is not exceeded.
PARAMETER
repetitive peak anode current
non-repetitive peak anode current
rate of rise of anode current
CONDITIONS
t
p
= 10
µs; δ
= 0.01
t
p
= 10
µs;
T
j
= 150
°C
I
A
≤
2.5 A
−
−
−
MIN.
3
20
BRY39
MAX.
2.5
A
A
UNIT
A/µs
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 kΩ.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
450
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Silicon controlled switch
INDIVIDUAL PNP TRANSISTOR
I
CEO
I
EBO
h
FE
I
CER
I
EBO
V
CEsat
V
BEsat
h
FE
C
c
C
e
f
T
V
AK
collector cut-off current
emitter cut-off current
DC current gain
I
B
= 0; V
CE
=
−70
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−70
V; T
j
= 150
°C
I
E
= 1 mA; V
CE
=
−5
V
V
CE
= 70 V; R
BE
= 10 kΩ
I
C
= 0; V
EB
= 5 V; T
j
= 150
°C
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; V
CE
= 2 V
I
E
= i
e
= 0; V
CB
= 20 V
I
C
= i
c
= 0; V
EB
= 1 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 2 V; f = 100 MHz
R
KG-K
= 10 kΩ
I
A
= 50 mA; I
AG
= 0
I
A
= 50 mA; I
AG
= 0; T
j
=
−55 °C
I
A
= 1 mA; I
AG
= 10 mA
−
−
3
−
−
−
−
50
−
−
100
−10
−10
15
µA
µA
INDIVIDUAL NPN TRANSISTOR
collector cut-off current
emitter cut-off current
collector-emitter saturation voltage
base-emitter saturation voltage
DC current gain
collector capacitance
emitter capacitance
transition frequency
100
10
10
0.5
0.9
−
5
25
−
nA
µA
µA
V
V
pF
pF
MHz
V
CE
= 70 V; R
BE
= 10 kΩ; T
j
= 150
°C −
COMBINED DEVICE
forward on-state voltage
−
−
−
−
1.4
1.9
1.2
1
V
V
V
mA
I
H
holding current
V
BB
=
−2
V; I
AG
= 10 mA;
R
KG-K
= 10 kΩ; see Fig.14
1997 Jul 24
4
Philips Semiconductors
Product specification
Programmable unijunction transistor/
Silicon controlled switch
SYMBOL
SWITCHING TIMES
BRY39
PARAMETER
CONDITIONS
V
KG-K
=
−0.5
to 4.5 V; R
KG-K
= 1 kΩ;
see Figs 15 and 16
V
KG-K
=
−0.5
to 0.5 V; R
KG-K
= 10 kΩ
R
KG-K
= 10 kΩ; see Figs 17 and 18
V
S
= 10 V; R
G
= 10 kΩ;
see Figs 3 and 8
V
S
= 10 V; R
G
= 100 kΩ;
see Figs 3 and 8
−
−
−
−
−
−
−
−
−
−
−
6
−
MIN.
MAX.
UNIT
µs
µs
µs
µA
µA
µA
µA
V
nA
nA
V
V
ns
t
on
turn-on time
0.25
1.5
15
t
off
I
p
turn-off time
Programmable unijunction transistor
peak point current
0.2
0.06
2
1
−
10
100
1.4
−
80
I
v
valley point current
V
S
= 10 V; R
G
= 10 kΩ;
see Figs 3 and 8
V
S
= 10 V; R
G
= 100 kΩ;
see Figs 3 and 8
V
offset
I
GAO
I
GKS
V
AK
V
OM
t
r
offset voltage
gate-anode leakage current
gate-cathode leakage current
anode-cathode voltage
peak output voltage
rise time
typical curve; I
A
= 0; for V
P
and V
S
see Fig.8
I
K
= 0; V
GA
= 70 V
V
AK
= 0; V
KG
= 70 V
I
A
= 100 mA
V
AA
= 20 V; C = 10 nF;
see Figs 9 and 11
V
AA
= 20 V; C = 10 nF; see Fig.11
Explanation of symbols
For application of the BRY39 as a programmable
unijunction transistor, only the anode gate is used. To
simplify the symbols, the term gate instead of anode gate
will be used (see Fig.2).
handbook, halfpage
anode
a
g
gate
k
cathode
MBB700
Fig.2
Programmable unijunction transistor
explanation of symbols.
1997 Jul 24
5
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