2N/SST5460 Series
Vishay Siliconix
P-Channel JFETs
2N5460
2N5461
2N5462
PRODUCT SUMMARY
Part Number
2N/SST5460
2N/SST5461
2N/SST5462
SST5460
SST5461
SST5462
V
GS(off)
(V)
0.75 to 6
1 to 7.5
1.8 to 9
V
(BR)GSS
Min (V)
40
40
40
g
fs
Min (mS)
1
1.5
2
I
DSS
Min (mA)
–1
–2
–4
FEATURES
D
D
D
D
High Input Impedance
Very Low Noise
High Gain: A
V
= 80 @ 20
mA
Low Capacitance: 1.2 pF Typical
BENEFITS
D
Low Signal Loss/System Error
D
High System Sensitivity
D
High-Quality Low-Level Signal
Amplification
APPLICATIONS
D
Low-Current, Low-Voltage Amplifiers
D
High-Side Switching
D
Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
1
2N5460
2N5461
2N5462
D
1
TO-236
(SOT-23)
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
S
D
2
3
S
2
G
G
3
Top View
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-1
2N/SST5460 Series
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N/SST5460
2N/SST5461
2N/SST5462
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Symbol
Test Conditions
Typ
a
Min Max Min
Max Min
Max Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
I
G
= 10
mA
, V
DS
= 0 V
V
DS
= –15 V, I
D
= –1
mA
V
DS
= –15 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
T
A
= 100_C
V
DG
= –20 V, I
D
= –0.1 mA
V
DS
= –15 V, V
GS
= 10 V
I
D
= –0.1 mA
55
40
0.75
–1
6
–5
5
1
40
1
–2
7.5
–9
5
1
40
V
1.8
–4
9
–16
5
1
mA
nA
mA
pA
0.003
0.0003
3
–5
1.3
2.3
3.8
–0.7
0.5
4
0.8
4.5
1.5
6
V
Gate-Source Voltage
V
GS
V
DS
= –15 V
I
D
= –0.2 mA
I
D
= –0.4 mA
Gate-Source
Forward Voltage
V
GS(F)
I
G
= –1 mA , V
DS
= 0 V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
g
fs
g
os
V
DS
= –15 V, V
GS
= 0 V
f = 1 kHz
1
4
75
2N
C
iss
V
DS
= –15 V, V
GS
= 0 V
f = 1 MHz
2N
C
oss
V
DS
= –15 V, V
GS
= 0 V
f = 100 Hz
V
DS
= –15 V, V
GS
= 0 V
f = 100 Hz, R
G
= 1 MW
W
BW = 1 Hz
SST
2N
SST
2N
SST
SST
4.5
4.5
1.2
1.5
1.5
15
15
0.2
0.2
PSCIB
2.5
2.5
2.5
dB
115
115
115
nV⁄
√Hz
√
2
2
2
pF
7
1.5
5
75
7
2
6
75
7
mS
mS
C
rss
e
n
Noise Figure
NF
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v2%.
www.vishay.com
9-2
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
–20
5
r
DS(on)
– Drain-Source On-Resistance (
Ω )
g
fs
– Forward Transconductance (mS)
1000
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
100
I
DSS
– Saturation Drain Current (mA)
g os– Output Conductance (
m
S)
–16
g
fs
–12
I
DSS
–8
800
80
600
r
DS
400
g
os
60
2.5
40
–4
g
fs
@ V
DS
= –15 V, V
GS
= 0 V
I
DSS
@ V
DS
= –15 V, V
GS
= 0 V
f = 1 kHz
0
0
2
4
6
8
10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
200
r
DS
@ I
D
= –100 mA, V
GS
= 0 V
g
os
@ V
DS
= –15 V, V
GS
= 0 V
f = 1 kHz
0
2
4
6
8
10
20
0
0
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
Output Characteristics
–2
V
GS(off)
= 1.5 V
–10
V
GS
= 0 V
0.2 V
I D – Drain Current (mA)
–8
Output Characteristics
V
GS(off)
= 3 V
–1.6
I D – Drain Current (mA)
–1.2
0.4 V
–6
V
GS
= 0 V
0.5 V
1.0 V
–0.8
0.6 V
0.8 V
–4
–0.4
1.0 V
–2
1.5 V
2.0 V
0
0
–4
–8
–12
–16
–20
V
DS
– Drain-Source Voltage (V)
0
0
–4
–8
–12
–16
–20
V
DS
– Drain-Source Voltage (V)
Output Characteristics
–0.5
V
GS(off)
= 1.5 V
–0.4
I D – Drain Current (mA)
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
I D – Drain Current (mA)
–1.6
–2
Output Characteristics
V
GS(off)
= 3 V
0.5 V
1.0 V
–1.2
1.5 V
–0.8
2.0 V
–0.4
1.2 V
2.5 V
0
0
–0.2
–0.4
–0.6
–0.8
–1
V
GS
= 0 V
0.8 V
–0.3
–0.2
1.0 V
–0.1
0
0
–0.2
–0.4
–0.6
–0.8
–1
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-3
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
–5
V
GS(off)
= 1.5 V
–4
I D – Drain Current (mA)
I D – Drain Current (mA)
V
DS
= –15 V
–8
–10
V
GS(off)
= 3 V
V
DS
= –15 V
Transfer Characteristics
–3
–6
T
A
= –55_C
–2
T
A
= –55_C
25_C
–4
25_C
–1
125_C
0
0
0.4
0.8
1.2
1.6
2
V
GS
– Gate-Source Voltage (V)
–2
125_C
0
0
1
2
3
4
5
V
GS
– Gate-Source Voltage (V)
On-Resistance vs. Drain Current
1000
r
DS(on)
– Drain-Source On-Resistance (
Ω )
T
A
= 25_C
800
I G – Gate Leakage
1 nA
10 nA
Gate Leakage Current
–5 mA
T
A
= 125_C
600
V
GS(off)
= 1.5 V
100 pA
I
GSS
@ 125_C
–1 mA
3V
400
4V
200
10 p A
T
A
= 25_C
1 pA
–5 mA
–0.1 mA
I
GSS
@ 25_C
0
–0.1
0.1 pA
–1
I
D
– Drain Current (mA)
–10
0
–10
–20
–30
–40
–50
V
DG
– Drain-Gate Voltage (V)
Transconductance vs. Gate-Source Voltage
5
V
GS(off)
= 1.5 V
g
fs
– Forward Transconductance (mS)
4
V
DS
= –15 V
f = 1 kHz
5
Transconductance vs. Gate-Source Voltage
V
GS(off)
= 3 V
g
fs
– Forward Transconductance (mS)
4
T
A
= –55_C
3
25_C
V
DS
= –15 V
f = 1 kHz
3
T
A
= –55_C
2
25_C
2
125_C
1
1
125_C
0
0
0.4
0.8
1.2
1.6
2
V
GS
– Gate-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
– Gate-Source Voltage (V)
www.vishay.com
9-4
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Circuit Voltage Gain vs. Drain Current
100
V
GS(off)
= 1.5 V
10
V
GS(off)
= 3 V
80
A V – Voltage Gain
g
fs
– Forward Transconductance (µS)
Common-Source Forward Transconductance
vs. Drain Current
T
A
= –55_C
1
125_C
60
V
GS(off)
= 3 V
25_C
40
20
0
Assume V
DD
= –15 V, V
DS
= –5 V
g
fs
R
L
10 V
A
V
+
R
L
+
I
D
1
)
R
L
g
os
–0.01
–0.1
I
D
– Drain Current (mA)
–1
V
DS
= –15 V
f = 1 kHz
0.1
–0.1
–1
I
D
– Drain Current (mA)
–10
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
C rss – Reverse Feedback Capacitance (pF)
f = 1 MHz
C iss – Input Capacitance (pF)
8
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz
6
2.5
4
–5 V
2
–5 V
–15 V
0
–15 V
0
0
4
8
12
16
20
V
GS
– Gate-Source Voltage (V)
0
4
8
12
16
20
V
GS
– Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
100
V
DS
= –15 V
g
os
– Output Conductance (µS)
16
20
Output Conductance vs. Drain Current
V
GS(off)
= 3 V
Hz
T
A
= –55_C
12
25_C
8
125_C
4
V
DS
= –15 V
f = 1 kHz
en – Noise Voltage nV /
I
D
= –0.1 mA
10
I
D
= –1 mA
1
10
100
1k
f – Frequency (Hz)
10 k
100 k
0
–0.1
–1
I
D
– Drain Current (mA)
–10
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-5
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