Datasheet> 器件分类 > 存储> SST39SF020A

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SST39SF020A: 产品描述128K X 8 FLASH 5V PROM, 55 ns, PQCC32; 产品类别存储; 文件大小281KB，共28页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com

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SST39SF020A概述

128K X 8 FLASH 5V PROM, 55 ns, PQCC32

128K × 8 FLASH 5V 可编程只读存储器, 55 ns, PQCC32

SST39SF020A规格参数

参数名称	属性值
功能数量	1
端子数量	32
最小工作温度	-40 Cel
最大工作温度	85 Cel
额定供电电压	5 V
最小供电/工作电压	4.5 V
最大供电/工作电压	5.5 V
加工封装描述	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32
each_compli	Yes
欧盟RoHS规范	Yes
中国RoHS规范	Yes
状态	Active
ype	NOR TYPE
sub_category	Flash Memories
ccess_time_max	55 ns
command_user_interface	YES
data_polling	YES
jesd_30_code	R-PQCC-J32
jesd_609_code	e3
存储密度	1.05E6 bit
内存IC类型	FLASH
内存宽度	8
moisture_sensitivity_level	NOT SPECIFIED
umber_of_sectors_size	32
位数	131072 words
位数	128K
操作模式	ASYNCHRONOUS
组织	128KX8
包装材料	PLASTIC/EPOXY
ckage_code	QCCJ
ckage_equivalence_code	LDCC32,.5X.6
包装形状	RECTANGULAR
包装尺寸	CHIP CARRIER
串行并行	PARALLEL
eak_reflow_temperature__cel_	260
wer_supplies__v_	5
gramming_voltage__v_	5
qualification_status	COMMERCIAL
seated_height_max	3.56 mm
sector_size__words_	4K
standby_current_max	1.00E-4 Amp
最大供电电压	0.0350 Amp
表面贴装	YES
工艺	CMOS
温度等级	INDUSTRIAL
端子涂层	MATTE TIN
端子形式	J BEND
端子间距	1.27 mm
端子位置	QUAD
ime_peak_reflow_temperature_max__s_	40
ggle_bi	YES
length	13.97 mm
width	11.43 mm

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data Sheet

The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose

Flash (MPF) devices manufactured with SST proprietary, high performance

CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-

ing injector attain better reliability and manufacturability compared with alternate

approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program

or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts

for x8 memories

Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• Sector-Erase Capability

– Uniform 4 KByte sectors

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Fast Read Access Time:

– 55 ns

– 70 ns

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

• Latched Address and Data

• Automatic Write Timing

– Internal V

Generation

• All devices are RoHS compliant

www.microchip.com

DS25022B

04/13

1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data Sheet

Product Description

The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tun-

neling injector attain better reliability and manufacturability compared with alternate approaches. The

SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The

SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39SF010A/020A/040 devices provide a maximum

Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the comple-

tion of Program operation. To protect against inadvertent write, they have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data

retention is rated at greater than 100 years.

The SST39SF010A/020A/040 devices are suited for applications that require convenient and econom-

ical updating of program, configuration, or data memory. For all system applications, they significantly

improve performance and reliability, while lowering power consumption. They inherently use less

energy during erase and program than alternative flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for program, data, and configuration storage

applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of

Erase/Program cycles that have occurred. Therefore the system software or hardware does not have

to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-

gram times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST39SF010A/020A/040 are offered in 32-lead

PLCC and 32-lead TSOP packages. A 600 mil, 32-pin PDIP is also available. See Figures 2, 3, and 4

for pin assignments.

DS25022B

04/13

SST39SF020A相似产品对比

	SST39SF020A	SST39SF040	SST39SF010A	SST39SF020A-55-5I-WHE
描述	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32	128K X 8 FLASH 5V PROM, 55 ns, PQCC32
功能数量	1	1	1	1
端子数量	32	32	32	32
内存宽度	8	8	8	8
组织	128KX8	128KX8	128KX8	256KX8
表面贴装	YES	YES	YES	YES
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	J BEND	J BEND	J BEND	GULL WING
端子位置	QUAD	QUAD	QUAD	DUAL
最小工作温度	-40 Cel	-40 Cel	-40 Cel	-
最大工作温度	85 Cel	85 Cel	85 Cel	-
额定供电电压	5 V	5 V	5 V	-
最小供电/工作电压	4.5 V	4.5 V	4.5 V	-
最大供电/工作电压	5.5 V	5.5 V	5.5 V	-
加工封装描述	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32	-
each_compli	Yes	Yes	Yes	-
欧盟RoHS规范	Yes	Yes	Yes	-
中国RoHS规范	Yes	Yes	Yes	-
状态	Active	Active	Active	-
ype	NOR TYPE	NOR TYPE	NOR TYPE	-
sub_category	Flash Memories	Flash Memories	Flash Memories	-
ccess_time_max	55 ns	55 ns	55 ns	-
command_user_interface	YES	YES	YES	-
data_polling	YES	YES	YES	-
jesd_30_code	R-PQCC-J32	R-PQCC-J32	R-PQCC-J32	-
jesd_609_code	e3	e3	e3	-
存储密度	1.05E6 bit	1.05E6 bit	1.05E6 bit	-
内存IC类型	FLASH	FLASH	FLASH	-
moisture_sensitivity_level	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
umber_of_sectors_size	32	32	32	-
位数	128K	128K	128K	-
操作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
ckage_code	QCCJ	QCCJ	QCCJ	-
ckage_equivalence_code	LDCC32,.5X.6	LDCC32,.5X.6	LDCC32,.5X.6	-
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
包装尺寸	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	-
串行并行	PARALLEL	PARALLEL	PARALLEL	-
eak_reflow_temperature__cel_	260	260	260	-
wer_supplies__v_	5	5	5	-
gramming_voltage__v_	5	5	5	-
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
seated_height_max	3.56 mm	3.56 mm	3.56 mm	-
sector_size__words_	4K	4K	4K	-
standby_current_max	1.00E-4 Amp	1.00E-4 Amp	1.00E-4 Amp	-
最大供电电压	0.0350 Amp	0.0350 Amp	0.0350 Amp	-
工艺	CMOS	CMOS	CMOS	-
端子涂层	MATTE TIN	MATTE TIN	MATTE TIN	-
端子间距	1.27 mm	1.27 mm	1.27 mm	-
ime_peak_reflow_temperature_max__s_	40	40	40	-
ggle_bi	YES	YES	YES	-
length	13.97 mm	13.97 mm	13.97 mm	-
width	11.43 mm	11.43 mm	11.43 mm	-

SST39SF020A

SST39SF020A概述

SST39SF020A规格参数

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