4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac
embedded applications and is based on the highly-reliable InGaP/GaAs HBT
technology. It is easily configured for high-linearity, high-efficiency applications
over a wide temperature range while operating over the 4.9-5.9 GHz frequency
band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum
mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply.
It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at
1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power ampli-
fier requires only a 4mA reference current for on/off control. It includes a VSWR/
temperature insensitive, linear power detector. The SST11CP15E is offered in a
12-contact UQFN package.
Features
• Small package size
– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-
ness)
• 50Ω on-chip input match and simple output match
• Packages available
– 12-pin QFN 2mm x 2mm x 0.55mm
• Wide operating voltage range
– V
CC
= 3.0–5.0V
• All lead-free devices are RoHS compliant
• High linear output power, 802.11a/n/ac:
– Spectrum mask compliant using 802.11a OFDM
- Up to 24 dBm at 5.0V
- Up to 22 dBm at 3.3V
– Spectrum mask compliant using 802.11n MCS7, 40 MHz
- Up to 22 dBm at 5.0V
- Up to 19 dBm at 3.3V
– ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a
- Up to 20 dBm at 5.0V V
CC
- Up to 18 dBm at 3.3V V
CC
– 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac
- Up to 16 dBm at 3.3V V
CC
Applications
• WLAN (IEEE 802.11a/n/ac)
• Japan WLAN
• HyperLAN2
• Multimedia
• WiMax
• High power-added efficiency/low operating current
for 54 Mbps 802.11a applications
– ~10% @ P
OUT
= 19 dBm for 54 Mbps, 3.3V V
CC
• Gain:
– Typically >26 dB gain across broadband
4.9-5.9 GHz, 3.3V V
CC
• Low idle current
– ~140 mA I
CQ
, 3.3 V V
CC
• High speed power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low shut-down current (<1 µA)
• On-chip power detector with -20 dB linear dynamic
range
– Temperature Stable
– VSWR insensitive
©2013 Silicon Storage Technology, Inc.
www.microchip.com
DS70005025C
05/13
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
Product Description
The SST11CP15E is a high-linearity power amplifier designed for 802.11 a/n/ac embedded applica-
tions. It has low power consumption and is based on the highly-reliable InGaP/GaAs HBT technology.
The SST11CP15E offers a wide operating-voltage range from V
CC
3.3V to 5.0V. It can be easily config-
ured for high-linearity, high-efficiency applications while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.9 GHz).
The SST11CP15E has excellent linearity, typically ~3% EVM at 19.5 dBm output power for 54 Mbps
802.11a operation, at 5.0V, while meeting 802.11a spectrum mask at 24 dBm. The power amplifier
also provides 16 dBm at 1.8% EVM with 802.11ac, 351 Mbps modulation. SST11CP15E includes a
wide dynamic-range, linear power detector that is insensitive to temperature and Voltage Standing
Wave Ratio (VSWR).
The power amplifier IC also features easy board-level operation along with high-speed power-up/down
control. Low reference current (typically 4 mA) makes the SST11CP15E controllable by an on/off
switching signal directly from the baseband chip. These features coupled with low operating current
make the SST11CP15E ideal for the final stage power amplification in battery-powered 802.11a/n/ac
WLAN transmitter applications.
The SST11CP15E is offered in 12-contact UQFN package with 0.6 mm maximum thickness. See Figure
2 for pin assignments and Table 1 for pin descriptions.
©2013 Silicon Storage Technology, Inc.
DS70005025C
05/13
2
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
Functional Blocks
VCC1
VCC2
VCC3
10
12
11
RFIN
1
Input
Match
9
GND
VCCb
2
8
RFOUT
VREF1
3
Bias
Control
Power
Detection
7
NC
4
VREF2
5
VREF3
6
DET
75025 B1.0
Figure 1:
Functional Block Diagram
©2013 Silicon Storage Technology, Inc.
DS70005025C
05/13
3
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
Pin Assignments
VCC1
VCC2
VCC3
10
12
11
RFIN
1
9
GND
Top View
(Contacts facing down)
VCCb
2
RF and DC GND
0
8
RFOUT
VREF1
3
7
NC
4
VREF2
5
VREF3
6
DET
75025 P1.0
Figure 2:
Pin Assignments for 12-contact UQFN
©2013 Silicon Storage Technology, Inc.
DS70005025C
05/13
4
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
Pin Descriptions
Table 1:
Pin Description
Symbol
GND
RFIN
VCCb
VREF1
VREF2
VREF3
DET
NC
RFOUT
GND
VCC3
VCC2
VCC1
Pin No.
0
1
2
3
4
5
6
7
8
9
10
11
12
Ground
Power Supply
Power Supply
Power Supply
PWR
PWR
PWR
No Connection
O
Power Supply
Pin Name
Ground
I
PWR
PWR
PWR
PWR
O
Type
1
Function
The center pad should be connected to RF ground with several
low inductance, low resistance vias.
RF input, DC decoupled
Supply voltage for bias circuit
Current Control
Current Control
Current Control
On-chip power detector
Unconnected pin
RF Output
Ground (NC is acceptable)
Power supply, 3
rd
stage
Power supply, 2
nd
stage
Power supply, 1
st
stage
T1.1 75025
1. I=Input, O=Output
©2013 Silicon Storage Technology, Inc.
DS70005025C
05/13
5
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