SSM6N42FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N42FE
○
Power Management Switch Applications
○
High-Speed Switching Applications
•
•
•
1.5V drive
N-ch 2-in-1
Low ON-resistance : R
DS(ON)
= 600 mΩ (max) (@V
GS
= 1.5V)
1.6±0.05
1.6±0.05
1.2±0.05
単½:
mm
ES6
1.0±0.05
0.5 0.5
1
2
3
6
5
4
0.2±0.05
0.12±0.05
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
: R
DS(ON)
= 450 mΩ (max) (@V
GS
= 1.8V)
: R
DS(ON)
= 330 mΩ (max) (@V
GS
= 2.5V)
: R
DS(ON)
= 240 mΩ (max) (@V
GS
= 4.5V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
(Note 1)
I
DP
(Note 1)
P
D
(Note 2)
T
ch
T
stg
Rating
20
±
10
800
1600
150
150
- 55 to 150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
0.55±0.05
―
―
TOSHIBA
2-2N1D
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 3.0 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Total rating
Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 0.135 mm
2
×
6)
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
NN4
1
2
3
1
Q1
Q2
2
3
1
2009-10-13
SSM6N42FE
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
Test Condition
I
D
= 1 mA, V
GS
= 0 V
I
D
= 1 mA, V
GS
= - 10 V
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±8
V, V
DS
= 0 V
V
DS
= 3 V, I
D
= 1 mA
V
DS
= 3 V, I
D
= 500 mA
I
D
= 500 mA, V
GS
= 4.5 V
Drain-source ON-resistance
R
DS (ON)
I
D
= 400 mA, V
GS
= 2.5 V
I
D
= 250 mA, V
GS
= 1.8 V
I
D
= 150 mA, V
GS
= 1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
= 10 V, I
D
= 0.8 A
V
GS
= 4.5 V
V
DD
= 10 V, I
D
= 200 mA
V
GS
= 0 to 2.5 V, R
G
= 4.7
Ω
I
D
= -0.8 A, V
GS
= 0 V
(Note 3)
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Min
20
12
⎯
⎯
0.35
1.05
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
2.1
185
245
310
370
90
21
15
2.00
1.02
0.98
18
50
-0.84
Max
⎯
⎯
1
±1
1.0
⎯
240
330
450
600
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.2
ns
V
nC
pF
mΩ
Unit
V
μA
μA
V
S
Drain-source forward voltage
Note 3: Pulse test
Switching Time Test Circuit
(Q1, Q2 Common)
(a) Test Circuit
2.5 V
0
10
μs
出力
V
DD
=
10 V
R
G
=
4.7
Ω
Duty
<
1%
=
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
(b) V
IN
2.5 V
10%
90%
入力
R
G
0V
(c) V
OUT
V
DD
90%
10%
t
r
t
on
t
off
t
f
V
DD
V
DS (ON)
Notice on Usage
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to be low (1 mA for the
SSM6N42FE). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on)
.
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2009-10-13
SSM6N42FE
Q1, Q2 Common
I
D
– V
DS
2000
Common Source
Ta = 25°C
10 V
4V
2.5 V
1.8 V
1.5 V
10000
Common Source
VDS = 3 V
I
D
– V
GS
(mA)
I
D
I
D
Drain current
1000
(mA)
1000
100
Drain current
10
Ta = 100°C
−25°C
VGS = 1.2 V
25°C
1
0
0
0.2
0.4
0.6
0.8
1.0
0.1
0
1
2
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
1000
Common Source
ID = 0.15 A
1000
R
DS (ON)
– V
GS
Common Source
ID = 0.5 A
Drain–source ON-resistance
R
DS (ON)
(mΩ)
500
Drain–source ON-resistance
R
DS (ON)
(mΩ)
500
25°C
Ta = 100°C
−25°C
0
0
2
4
6
8
10
25°C
Ta = 100°C
−25°C
0
0
2
4
6
8
10
Gate–source voltage
V
GS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– I
D
1000
Common Source
Ta = 25°C
1000
Common Source
R
DS (ON)
– Ta
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Drain–source ON-resistance
R
DS (ON)
(mΩ)
1.8 V, 0.25 A
500
VGS = 1.5 V, ID = 0.15 A
500
VGS = 1.5 V
1.8 V
2.5 V
4.5 V
4.5 V, 0.5 A
0
0
−50
2.5 V, 0.4 A
0
1000
2000
0
50
100
150
Drain current
I
D
(mA)
Ambient temperature
Ta
(°C)
3
2009-10-13
SSM6N42FE
Q1, Q2 Common
V
th
– Ta
1.0
10
Common Source
ID = 1 mA
VDS = 3 V
⎪Y
fs
⎪
– I
D
⎪Y
fs
⎪
Forward transfer admittance
(S)
5
3
V
th
(V)
1
0.5
0.3
Gate threshold voltage
0.5
0.1
0.05
0.03
Common Source
VDS = 3 V
Ta = 25°C
10
100
1000
10000
0
−50
0
50
100
150
0.01
1
Ambient temperature
Ta
(°C)
Drain current
I
D
(mA)
I
DR
– V
DS
10000
C – V
DS
1000
500
(mA)
Common Source
VGS = 0 V
D
I
DR
I
DR
(pF)
1000
G
100
S
100
50
Ciss
Drain reverse current
Ta = 100°C
−25°C
Capacitance
C
25°C
Coss
10
5
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
0.1
0.5
1
5
10
50
100
Crss
10
1
0
−0.5
−1
−1.5
1
Drain–source voltage
V
DS
(V)
Drain–source voltage
V
DS
(V)
t – I
D
10000
5000
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25°C
Dynamic Input Characteristic
10
Common Source
ID = 0.8 A
Ta = 25°C
(V)
8
(ns)
t
500 t
f
V
GS
Gate–source voltage
6
VDD = 10 V
4
VDD = 16 V
2
0
1000 toff
Switching time
100
50
ton
10
5
tr
1
1
10
100
1000
10000
0
1
2
3
4
Drain current
I
D
(mA)
Total Gate Charge
Qg
(nC)
4
2009-10-13
SSM6N42FE
Q1, Q2 Common
P
D
* – T
a
250
Mounted on FR4 board.
2
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm
×
6)
(mW)
P
D
*
Drain power dissipation
200
150
100
150
0
-40
-20
0
20
40
60
80
100 120
140 160
*:Total Rating
Ambient temperature
Ta
(°C)
5
2009-10-13
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