SSM6J212FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J212FE
○
Power Management Switch Applications
•
•
1.5-V drive
Low ON-resistance: R
DS(ON)
= 94.0 mΩ (max) (@V
GS
= -1.5 V)
R
DS(ON)
= 65.4 mΩ (max) (@V
GS
= -1.8 V)
R
DS(ON)
= 49.0 mΩ (max) (@V
GS
= -2.5 V)
R
DS(ON)
= 40.7 mΩ (max) (@V
GS
= -4.5 V)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
(Note 1)
I
DP
(Note 1)
P
D
(Note 2)
t = 10s
T
ch
T
stg
Rating
-20
±
8
-4.0
-8.0
500
700
150
−55
to 150
Unit
V
V
A
1,2,5,6
：
Drain
mW
°C
°C
3
：
Gate
：
Source
Drain power dissipation
Channel temperature
Storage temperature range
ES6
JEDEC
4
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-2N1J
temperature, etc.) may cause this product to decrease in the
Weight : 3mg ( typ. )
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Marking (Top View)
6
5
4
Equivalent Circuit
6
5
4
PQ
1
2
3
1
2
3
1
2009-12-09
SSM6J212FE
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
Test Conditions
Min
-20
(Note 4)
-15
⎯
⎯
-0.3
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
4.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
9.4
35.3
41.3
48.6
56.7
970
127
109
47
143
14.1
1.7
2.4
0.87
Max
⎯
⎯
-1
±1
-1.0
⎯
40.7
49.0
65.4
94.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
V
nC
ns
pF
mΩ
Unit
V
V
μA
μA
V
S
V
(BR) DSS
I
D
=
-1 mA, V
GS
=
0 V
V
(BR) DSX
I
D
=
-1 mA, V
GS
=
5 V
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
V
DS
= -20 V, V
GS
= 0 V
V
GS
= ±8
V, V
DS
=
0 V
V
DS
=
-3 V, I
D
=
-1 mA
V
DS
=
-3 V, I
D
=
-1.0 A
I
D
=
-3.0 A, V
GS
=
-4.5 V
Drain–source ON-resistance
R
DS (ON)
I
D
=
-2.0 A, V
GS
=
-2.5 V
I
D
=
-1.0 A, V
GS
=
-1.8 V
I
D
=
-0.5 A, V
GS
=
-1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source forward voltage
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
t
on
t
off
Q
g
Q
gs1
Q
gd
V
DSF
V
DS
=
-10 V, V
GS
=
0 V
f
=
1 MHz
V
DD
=
-10 V, I
D
=
-2.0 A
V
GS
=
0 to -2.5 V, R
G
=
4.7
Ω
V
DD
=
-10 V, I
DD
=
-4.0 A,
V
GS
=
-4.5 V
I
D
=
4.0 A, V
GS
=
0 V
(Note 3)
⎯
⎯
⎯
Note3: Pulse test
Note4: V
DSX
mode (the application of a plus voltage between gate and source) may cause decrease in maximun
rating of drain-source voltage
Switching Time Test Circuit
(a) Test Circuit
0
OUT
IN
R
G
R
L
V
DD
−2.5
V
10%
(b) V
IN
0V
90%
−
2.5V
10
μs
(c) V
OUT
V
DS (ON)
90%
10%
t
r
t
on
t
off
t
f
V
DD
= -10 V
R
G
=
4.7
Ω
Duty
≤
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DD
Notice on Usage
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
= -1 mA for
this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on).
)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance R
th (ch-a)
and drain power dissipation P
D
vary depending on board material, board area, board
thickness and pad area. When using this device, please take heat dissipation into consideration
2
2009-12-09
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