SSM3J325F
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J325F
○
Power Management Switch Applications
•
•
1.5-V drive
Low ON-resistance: R
DS(ON)
= 311 mΩ (max) (@V
GS
= -1.5 V)
R
DS(ON)
= 231 mΩ (max) (@V
GS
= -1.8 V)
R
DS(ON)
= 179 mΩ (max) (@V
GS
= -2.5 V)
R
DS(ON)
= 150 mΩ (max) (@V
GS
= -4.5 V)
+0.5
2.5-0.3
+0.25
1.5-0.15
+0.1
0.4-0.05
3
0.3
Unit: mm
0.95 0.95
2.9±0.2
1
2
Absolute Maximum Ratings
(Ta = 25°C)
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
V
DSS
V
GSS
I
D
(Note 1)
I
DP
(Note 1)
P
D
(Note 2)
t = 1s
T
ch
T
stg
-20
±
8
-2.0
-4.0
600
1200
150
−55
to 150
V
V
A
mW
°C
°C
+0.2
1.1-0.1
1.9
Characteristic
Symbol
Rating
Unit
S-MINI
JEDEC
1.Gate
2.Source
3.Drain
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-59
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1F
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 12 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Marking
3
Equivalent Circuit
3
KFE
1
2
1
2
1
2009-12-02
0~0.1
+0.1
0.16-0.06
SSM3J325F
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
Test Conditions
Min
-20
.(Note
4)
-15
⎯
⎯
-0.3
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
2.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(Note 3)
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
4.4
123
143
170
192
270
40
32
17
43
4.6
0.4
0.9
0.97
Max
⎯
⎯
-1
±1
-1.0
⎯
150
179
231
311
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
V
nC
ns
pF
mΩ
Unit
V
V
μA
μA
V
S
V
(BR) DSS
I
D
= -1 mA, V
GS
= 0 V
V
(BR) DSX
I
D
= -1 mA, V
GS
= 5 V
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
V
DS
= -20 V, V
GS
= 0 V
V
GS
=
±8
V, V
DS
= 0 V
V
DS
= -3 V, I
D
= -1 mA
V
DS
= -3 V, I
D
= -1.0 A
I
D
= -1.0 A, V
GS
= -4.5 V
Drain–source ON-resistance
R
DS (ON)
I
D
= -0.6 A, V
GS
= -2.5 V
I
D
= -0.4 A, V
GS
= -1.8 V
I
D
= -0.2 A, V
GS
= -1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source forward voltage
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
t
on
t
off
Q
g
Q
gs1
Q
gd
V
DSF
V
DS
= -10 V, V
GS
= 0 V
f = 1 MHz
V
DD
= -10 V, I
D
= -1.0 A
V
GS
= 0 to -2.5 V, R
G
= 4.7
Ω
V
DD
= -10 V, I
DD
= -2.0 A,
V
GS
= -4.5V
I
D
= 2.0 A, V
GS
= 0 V
Note3: Pulse test
Note4: V
DSX
mode (the application of a plus voltage between gate and source) may cause decrease in maximun
rating of drain-source voltage
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
0
OUT
IN
−2.5
V
R
G
R
L
V
DD
V
DD
t
on
10%
0V
90%
−
2.5V
10
μs
(c) V
OUT
V
DS (ON)
90%
10%
t
r
t
off
t
f
V
DD
= -10 V
R
G
= 4.7
Ω
Duty
≤
1%
V
IN
: t
r
, t
f
< 5 ns
Common Source
Ta = 25°C
Notice on Usage
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to be low (-1 mA for the
SSM3J325F). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on)
.
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance R
th (ch-a)
and drain power dissipation P
D
vary depending on board material, board area, board
thickness and pad area. When using this device, please take heat dissipation into consideration
2
2009-12-02
SSM3J325F
I
D
– V
DS
-5
-4.5V
-2.5V
-1.8 V
-1
-10
Common Source
VDS = -3 V
I
D
– V
GS
(A)
-4
I
D
-3
I
D
Drain current
(A)
-0.1
Ta = 100 °C
-0.01
-25 °C
-2
VGS = -1.5 V
Drain current
-1
Common Source
Ta = 25 °C
0
-0.2
-0.4
-0.6
-0.8
-1
25 °C
-0.001
0
-0.0001
0
-1.0
-2.0
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
400
ID = -1.0A
Common Source
400
Common Source
Ta = 25°C
R
DS (ON)
– I
D
-1.5 V
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Drain–source ON-resistance
R
DS (ON)
(mΩ)
300
300
-1.8V
200
25 °C
Ta = 100 °C
200
-2.5 V
100
-25 °C
100
VGS = -4.5 V
0
0
-2
-4
-6
-8
0
0
-2.0
-4.0
-6.0
-8.0
Gate–source voltage
V
GS
(V)
Drain current
I
D
(A)
400
Common Source
R
DS (ON)
– Ta
V
th
(V)
V
th
– Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
Drain–source ON-resistance
R
DS (ON)
(mΩ)
300
-0.4 A / -1.8V
200
-0.2 A / -1.5 V
-0.6 A / -2.5 V
Gate threshold voltage
-0.5
100
ID = -1.0 A / VGS = -4.5 V
0
−50
0
50
100
150
0
−50
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
3
2009-12-02
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