BRT 21, BRT 22, BRT 23
SITAC
®
AC Switches
With Zero Voltage Switch
Without Zero Voltage Switch
•
AC switch with zero-voltage detector
•
Electrically insulated between input and output circuit
•
Microcomputer-compatible by very low trigger current
•
UL-tested (file no. E 52744), code letter "J"
•
Available with the following options:
Option 1: VDE 0884-approved
Option 6: Pins in 10.16 mm spacing
Option 7: Pins for sourface mounting
Type
BRT 21 H
BRT 21 H
BRT 22 H
BRT 22 H
BRT 22 H
BRT 22 H
BRT 22 H
Opt.
-
-
1
7
V
DRM
400 V
600 V
600 V
600 V
I
TRMS
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
300 mA
I
FT
2 mA
2 mA
2 mA
2 mA
2 mA
2 mA
2 mA
3 mA
3 mA
2 mA
2 mA
2 mA
2 mA
3 mA
dv/d
t
cr
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
10 kV/µs
Marking
BRT 21 H
BRT 21 H
BRT 22 H
BRT 22 H
BRT 22 H
BRT 22 H
BRT 22 H
Ordering Code
C67079-A1020-A6
C67079-A1050-A16
C67079-A1021-A6
C67079-A1051-A5
C67079-A1051-A11
C67079-A1051-A16
C67079-A1051-A17
1 + 6 400 V
1 + 6 600 V
1 + 7 600 V
600 V
600 V
800 V
800 V
800 V
800 V
BRT 22 M -
BRT 22 M 1
BRT 23 H
BRT 23 H
BRT 23 H
BRT 23 H
-
6
7
BRT 22 M C67079-A1021-A10
BRT 22 M C67079-A1051-A6
BRT 23 H
BRT 23 H
BRT 23 H
BRT 23 H
C67079-A1022-A6
C67079-A1052-A8
C67079-A1052-A11
C67079-A1052-A14
1 + 6 800 V
BRT 23 M -
BRT 23 M C67079-A1022-A10
Information
Package
1
2
3
Anode
Pin Configuration
4
A1
5
do not
connect
6
A2
Cathode
not
Kathode
50 pcs per tube P-DIP-6
connected
Semiconductor Group
1
12.96
BRT 21, BRT 22, BRT 23
Maximum Ratings,
at
Tj
= 25 °C, unless otherwise specified.
Tj
AC Switch
Parameter
Max. Power dissipation
Chip or operating temperature
Storage temperature
Insulation test voltage
1)
Symbol
Value
630
-40 ...+ 100
-40 ...+ 150
5300
Unit
mW
°C
P
tot
T
j
T
stg
V
IS
V
RMS
between input/output circuit
(climate in acc. with DIN 40046, part2, Nov.74)
Reference voltage in acc. with VDE 0110 b
(insulation group C)
Creepage tracking resistance
(in acc. with DIN IEC 112/VDE 0303, part 1)
Insulation resistance
V
ref
C
TI
500
600
175
V
RMS
V
DC
(group IIIa
acc. to DIN
VDE 0109)
R
is
≥
10
12
≥
10
11
-
-
-
F
≥
7.2
≥
7.2
Ω
V
IO
= 500 V,
T
A
= 25 °C
V
IO
= 500 V,
T
A
= 100 °C
DIN humidity category, DIN 40 040
Creepage distance (input/output circuit)
Clearance (input/output circuit)
Input Circuit
Parameter
Param VR
Continuous forward current
Surge forward current,
,
Max. power dissipation,
t
≤
10
µs
µs
Symbol
-
mm
Value
6
20
1.5
30
Unit
V
mA
A
mW
V
R
I
F
I
FSM(I)
P
tot
Symbol
BRT
21
400
300
3
600
Output Circuit
Parameter
Repetitive peak off-state voltage
RMS on-state current
Single cycle surge current (50 Hz)
Max. power dissipation
Semiconductor Group
2
BRT BRT
22
600
23
800
Unit
V
mA
A
mW
12.96
V
DRM
I
TRMS
I
TSM(I)
P
tot
BRT 21, BRT 22, BRT 23
Characteristics
at
Tj
= 25 °C, unless otherwise specified.
Tj
Input Circuit
Parameter
Forward Voltage,
Symbol
min.
Values
typ.
1.1
-
-
max.
1.35 V
10
µA
Unit
V
F
I
R
R
thJA
-
-
-
I
F
= 10 mA
Reverse current,
V
R
= 6 V
Thermal resistance
2)
junction - ambient
Output Circuit
Parameter
Critical rate of rise of off-state voltage
Symbol
min.
d
v/dt
cr
10
5
d
v/dt
crq
10
5
d
i/dt
cr
8
-
-
-
-
-
-
-
-
2
A/µs
A
-
-
-
-
Values
typ.
max.
kV/µs
Unit
750 K/W
V
D
= 0.67
V
DRM
,
T
j
= 25 °C
V
D
= 0.67
V
DRM
,
T
j
= 80 °C
Critical rate of rise of voltage at current
commutation
communication
V
D
= 0.67 V
DRM
,
T
j
j
= 25
°C,
di
i/dt
crq
≤
15 A/ms
T
= 25 °C, d/dt
crq
≤
15 A/ms
T
= 80 °C, d/dt
crq
≤15
V
D
= 0.67 V
DRM
,
T
j
j
= 80
°C,
di
i/dt
crq
≤
15 A/ms
Critical rate of rise of on-state current
Pulse current
I
tp
V
T
I
D
t
p
≤
5
µs,
ff
= 100 Hz,
i
tp
/dt/dt 8 A/µs
p
≤
5 µs, = 100 , d di
tp
≤ ≤
8 A/ms
On-state voltage,
I
T
= 300 mA
Off-state current
-
-
2.3
V
µA
T
C
= 25 °C,
V
DRM
T
C
= 80 °C,
V
DRM
Holding current,
-
-
7
12
80
-
30
100
1000
500
125 K/W
I
H
R
thJA
-
-
V
D
= 10 V
Thermal resistance
2)
junction - ambient
Semiconductor Group
3
12.96
BRT 21, BRT 22, BRT 23
Response Characteristics
at
T
j
= 25 °C, unless otherwise specified.
Parameter
Trigger current 1
Symbol
min.
Values
typ.
max.
mA
0.4
0.4
-
-
2
3
Unit
I
FT1
type H
type M
V
D
= 6 V
Trigger current 2
I
FT2
V
op
= 220 V,
ƒ
= 50 Hz,T
j
= 100°C
t
pF
> 10 ms
type H
type M
Trigger current temperature gradient
Inhibit voltage,
I
F
=
I
FT1
Inhibit voltage temperature gradient
Off-state current in inhibit state
∆
I
FT1
/∆T
j
∆
I
FT2
/∆T
j
-
-
-
-
-
7
-
-
-
-
7
8
-20
50
-
6
9
14
12
-
µA/K
V
mV/K
V
DINH
∆
V
DINH
/
∆
T
j
I
DINH
C
IO
200 µA
2
pF
I
F
=
I
FT1
,
V
DRM
Capacitance between input and output circuit
V
R
= 0 V,
f
= 1 kHz
1) Static air, SITAC soldered in pcb or base plate.
2) Test AC voltage in acc. with DIN 57883, June 1980.
3) The SITAC switch is soldered in pcb or base plate.
4) Termocouple measurement has to be performed potentially separated to A1 and A2.
The measuring junction should be as near as possible at the case.
5) The SITAC zero voltage switch can be triggered only in the hatched area below the
T
j
curves.
Semiconductor Group
4
12.96
BRT 21, BRT 22, BRT 23
Characteristics
at
Tj
= 25 °C, unless otherwise specified.
Tj
Typical input characteristics
I
F
=
ƒ(
V
F
)
Typical output characteristics
I
T
=
ƒ(
V
T
)
Current reduction
I
TRMS
=
ƒ(
T
A
)
R
thJA
= 125 K/W
3)
Current reduction
I
TRMS
=
ƒ(
T
PIN5
)
R
thJ-PIN5
= 16,5 K/W
4)
Semiconductor Group
5
12.96
NXP MCU
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