Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Their intended
application is protection of line based
telecommunications
equipment
against voltage transients.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
PARAMETER
Breakover voltage
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
Holding current
Non-repetitive peak pulse
current (CCITT K17)
MIN.
-
-
-
-
-
-
-
-
150
-
TYP.
140
160
180
200
220
240
260
280
-
-
MAX.
-
-
-
-
-
-
-
-
-
40
UNIT
V
V
V
V
V
V
V
V
mA
A
I
H
I
PP
OUTLINE - SOD106
date code
XXX denotes voltage grade
SYMBOL
YM
212
XXX
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
D
PARAMETER
Continuous voltage
CONDITIONS
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
5/310
µs
impulse equivalent to
10/700
µs,
1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T
j
= 70 ˚C prior to surge
t
p
= 10 ms
t
p
= 10
µs
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- 40
-
-
MAX.
105
120
135
150
165
180
195
210
40
15
1.1
50
4
50
150
150
260
UNIT
V
V
V
V
V
V
V
V
A
A
A
2
s
A/µs
W
W
˚C
˚C
˚C
I
PP
I
TSM
I
2
t
dI
T
/dt
P
tot
P
TM
T
stg
T
j
T
L
Non-repetitive peak pulse
current
Non repetitive surge peak
on-state current
I
2
t for fusing
Rate of rise of on-state current
after V
(BO)
turn-on
Continuous dissipation on
T
sp
= 50˚C
infinite heatsink
Peak dissipation
t
p
= 1 ms; T
a
= 25˚C
Storage temperature
Operating junction temperature
Maximum terminal temperature soldering time = 10 s
for soldering
January 1997
PH
1
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
Z
th j-a
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
CONDITIONS
MIN.
-
pcb mounted; minimum footprint
t
p
= 1 ms
-
-
TYP.
-
100
2.6
MAX.
25
-
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
TYPE
PARAMETER
Marking
Avalanche
voltage
I
BR
= 10 mA
V
BR
min
V
212-140
212-160
212-180
212-200
212-220
212-240
212-260
212-280
123
140
158
176
193
211
228
246
typ
V
140
160
180
200
220
240
260
280
typ
V
140
160
180
200
220
240
260
280
Breakover
voltage
I
D
≤
I
S
t
p
= 100
µs
V
BO
max
V
157
180
202
224
247
269
292
314
Off-state current
Critical rate of
rise of off-state
voltage
T
j
= 70˚C
dV
D
/dt @ V
DM
max
V
105
120
135
150
165
180
195
210
MIN.
-
150
100
10
-
-
TYP.
-
-
-
200
+0.1
-
V/µs
2000
2000
2000
2000
2000
2000
2000
2000
MAX.
2.5
-
-
1000
-
100
V
105
120
135
150
165
180
195
210
UNIT
V
mA
mA
mA
%/K
pF
Conditions
Symbol
Limits
Units
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
SYMBOL
V
T
I
H
I
S
S
(BR)
C
j
T
j
= 70˚C;
RH
≤
65%
I
D
@ V
D
max
µA
10
10
10
10
10
10
10
10
PARAMETER
On-state voltage
Holding current
1
Switching current
2
Temperature coefficient of
avalanche voltage
Junction capacitance
CONDITIONS
I
TM
= 2 A; t
p
= 200
µs
T
j
= 25˚C
T
j
= 70˚C
t
p
= 100
µs
V
D
= 0 V, f = 1 kHz to 1 MHz
1
The minimum current at which the diode will remain in the on-state
2
The avalanche current required to switch the diode to the on-state.
January 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
current
IT
VT
1.06
1.04
IS
V(BR)(Tj)
V(BR)(25 C)
1.02
1.00
0.98
IH
ID
V(BR)
I(BR)
VD
voltage
V(BO)
0.96
0.94
0.92
Symbol
Symmetric BOD
0.90
-40
-20
0
20
40
Tj / C
60
80
100
Fig.1. Definition of breakover diode characteristics.
Fig.4. Normalised avalanche breakdown voltage V
(BR)
and V
(BO)
as a function of temperature.
IT / A
Tj = 25 C
Tj = 150 C
15
current
100%
90%
I PP
20
50%
10
typ
max
30%
5
0
5us
310us
time
0
1
2
VT / V
3
4
Fig.2. Test waveform for high voltage impulse (I
PP
)
according to CCITT vol IX-Rec K17.
Fig.5. On-state current as a function of on-state
voltage; t
p
= 200
µ
s to avoid excessive dissipation.
100 ID / uA
20
ITSM / A
BR211
I
ITSM
time
15
10
10
max
1
5
0
0.1
1
10
100
Number of impulses
1000
10000
-40
-20
0
20
40
Tj / C
60
80
100
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; T
j
= 70˚C
prior to surge.
Fig.6. Maximum off-state current as a function of
temperature.
January 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
10 IS / A
100
Cj / pF
1
max
typ
typ
BR211-140
BR211-280
0.1
10
0.01
min
0.001
-50
0
50
Tj / C
100
150
1
1
10
VD / V
100
1000
Fig.7. Switching current as a function of junction
temperature.
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; T
j
= 25˚C.
Zth / (K/W)
BR211
10 IH / A
1000
1
100
0.1
min
10
0.01
1
P
D
t
p
t
0.001
-50
0
50
Tj / C
100
150
0.1
10us
1ms
0.1s
tp / s
10s
1000s
Fig.8. Minimum holding current as a function of
temperature.
Fig.10. Transient thermal impedance. Z
th j-a
= f(t
p
).
January 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
5.5
5.1
4.5
4.3
2.3
2.0
0.2
0.05
3.3
2.7
2.8 1.6
2.4 1.4
Fig.11. SOD106.
Notes
1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering
Guidelines". Order code:9397 750 00505.
January 1997
5
Rev 1.000
嵌入式系统
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