Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
SR2030CT-G Thru. SR20150CT-G
Voltage: 30 to 150 V
Current: 20.0 A
RoHS Device
Features
-Metal of silicon rectifier, majority carrier conduction.
-Guard ring for transient protection.
-Low power loss, high efficiency.
-High current capability, low VF.
-High surge capacity.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
TO-220AB
0.135(3.44)
0.103(2.62)
0.413(10.50)
0.347( 9.50)
0.153(3.90)
0.146(3.70)
0.187(4.80)
0.173(4.40)
0.055(1.40)
0.047(1.20)
0.270(6.90)
0.230(5.80)
0.610(15.50)
0.583(14.80)
Mechanical Data
-Case: TO-220AB, molded plastic
-Epoxy: UL 94-V0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
-Weight: 2.24 grams
Dimensions in inches and (millimeter)
0.057(1.45)
0.045(1.14)
0.177
(4.5)
MAX
0.583(14.80)
0.531(13.50)
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
0.024(0.60)
0.012(0.30)
0.138
MAX
(3.50)
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current ( See Fig.1 )
@ Tc= 95°C
Peak forward surage current ,8.3ms single
half sine-wave
super imposed on rated load
(JEDEC method)
Peak forward voltage at 10.0A DC (Note 1)
Maximum DC Reverse Current
@ T
J
= 25°C
at Rate DC Blocking Voltage
@ T
J
= 100°C
Symbol
SR
SR
SR
SR
SR
SR
SR
2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G
Unit
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θJC
T
J
T
STG
30
21
30
40
28
40
50
35
50
60
42
60
20.0
200
80
56
80
100
70
100
150
105
150
0.55
0.70
1.0
50
600
2.0
-55 to +150
-55 to +150
0.85
0.95
V
mA
pF
°C/W
°C
°C
Typical junction capacitance (Note2)
Typical thermal resistance (Note3)
Operating temperature range
Storage temperature range
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
REV:A
QW-BB056
Page 1
Comchip Technology CO., LTD.
Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (SR2030CT-G Thru. SR20150CT-G)
FIG.1- Forward Current Derating Curve
Peak Forward Surge Current, ( A )
25.0
FIG.2- Maximum Non-Repetitive Surge Current
300
250
200
150
100
50
0
1
2
5
10
20
50
100
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
Average forward current, ( A )
20.0
15.0
10.0
5.0
0
0
25
50
75
100
125
150
175
Single Phase Half Wave
60Hz Resistive or
Inductive Load
Case temperature, (°C)
Number of cycles at 60Hz
FIG.3- Typical Rever Characteristics
1000
100
FIG.4- Typical Forward Characteristics
MBR2030CT-G~
MBR2040CT-G
Instantaneous reverse current, ( mA )
Instantaneous forward current, ( A )
100
MBR2050CT-G~
MBR2060CT-G
10
MBR2080CT-G~
MBR20100CT-G
10
T
J
=100°C
T
J
=75°C
1.0
MBR20150CT-G
1
0.1
T
J
=25°C
TJ=25°C
PULSE WIDTH 300US
2% DUTY CYCLE
0.01
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
Percent of rated peak reverse voltage, (%)
Instantaneous forward voltage, ( V )
FIG.5- Typical Junction Capacitance
10000
Capacitance, (pF)
1000
T
J=
25°C f=1MHz
100
0.1
1
10
100
Reverse voltage, (V)
REV:A
QW-BB056
Page 2
Comchip Technology CO., LTD.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
