THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD15N06-42L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and
Pulsed Current
a
Forward Voltage
Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Characteristics
b
I
SM
V
SD
t
rr
I
F
= 10 A, V
GS
= 0 V
I
F
= 15 A, dI/dt = 100 A/μs
-
-
-
-
0.9
29
50
1.2
60
A
V
ns
V
DD
= 30 V, R
L
= 2
I
D
15 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 30 V, I
D
= 15 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
1.8
-
-
-
-
425
95
40
9.5
1.7
2.5
3.6
5
10
13
8
535
120
50
15
-
-
5.4
8
15
20
12
ns
nC
pF
g
fs
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
5
V
I
D
= 10 A
I
D
= 10 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 175 °C
I
D
= 10 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 175 °C
I
D
= 10 A
60
1.5
-
-
-
-
30
-
-
-
-
-
-
-
-
2
-
-
-
-
-
0.036
-
-
0.092
0.110
0.048
11
-
2.5
± 100
1
50
150
-
0.042
0.075
0.090
-
-
0.060
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 6 A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1185-Rev. F, 20-May-13
Document Number: 68880
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD15N06-42L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
50
40
Vishay Siliconix
40
I
D
- Drain Current (A)
V
GS
= 10 V thru 6 V
V
GS
= 5 V
I
D
- Drain Current (A)
32
30
24
T
C
= 25 °C
16
20
V
GS
= 4 V
10
8
V
GS
= 3 V
0
0
0
2
4
6
8
10
0
2
V
DS
- Drain-to-Source Voltage (V)
T
C
= - 55 °C
4
6
8
10
T
C
= 125 °C
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
25
0.10
Transfer Characteristics
g
fs
- Transconductance (F)
T
C
= 25 °C
15
T
C
= 125 °C
10
R
DS(on)
- On-Resistance ()
20
T
C
= - 55 °C
0.08
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
0.02
5
0
0
2
4
6
8
10
I
D
- Drain Current (A)
0
0
4
8
12
16
20
I
D
- Drain Current (A)
Transconductance
10
700
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
600
C - Capacitance (pF)
500
C
iss
400
300
200
C
oss
100
C
rss
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
8
I
D
= 15 A
V
DS
= 30 V
6
4
2
0
0
2
4
6
8
10
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
S13-1185-Rev. F, 20-May-13
Document Number: 68880
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQD15N06-42L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
I
D
= 10 A
2.1
R
DS(on)
- On-Resistance
(Normalized)
I
S
- Source Current (A)
10
T
J
= 150 °C
1
100
Vishay Siliconix
1.7
V
GS
= 10
V
V
GS
= 4.5
V
1.3
0.1
T
J
= 25 °C
0.9
0.01
0.5
- 50 - 25
0.001
0
25
50
75
100
125
150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.5
0.5
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.4
0.2
V
GS(th)
(V)
0.3
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250 µA
0.2
0.1
T
J
= 25 °C
0
0
2
4
6
T
J
= 150 °C
- 0.7
8
10
- 1.0
- 50
- 25
0
25
50
75
100
125
150 175
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
75
I
D
= 10 mA
72
Threshold Voltage
V
DS
- Drain-to-Source
Voltage
(V)
69
66
63
60
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S13-1185-Rev. F, 20-May-13
Document Number: 68880
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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