Standard SRAM, 8KX9, 12ns, BICMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| Objectid | 1164070513 |
| 包装说明 | DIP, DIP28,.3 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 12 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-CDIP-T28 |
| JESD-609代码 | e0 |
| 内存密度 | 73728 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 9 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 8192 words |
| 字数代码 | 8000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 8KX9 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大压摆率 | 0.17 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | BICMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn85Pb15) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 71B569S12TD | 71B569S12TP | 71B569S15TD | 71B569S15TP | 71B569S20TD | 71B569S20TP | |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 8KX9, 12ns, BICMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Standard SRAM, 8KX9, 12ns, BICMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Standard SRAM, 8KX9, 15ns, BICMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Standard SRAM, 8KX9, 15ns, BICMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Standard SRAM, 8KX9, 20ns, BICMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Standard SRAM, 8KX9, 20ns, BICMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.3 |
| Reach Compliance Code | not_compliant | _compli | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 12 ns | 12 ns | 15 ns | 15 ns | 20 ns | 20 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-CDIP-T28 | R-PDIP-T28 | R-CDIP-T28 | R-PDIP-T28 | R-CDIP-T28 | R-PDIP-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 73728 bit | 73728 bi | 73728 bit | 73728 bit | 73728 bit | 73728 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| 字数代码 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 8KX9 | 8KX9 | 8KX9 | 8KX9 | 8KX9 | 8KX9 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 225 | 225 | 225 | 225 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大压摆率 | 0.17 mA | 0.17 mA | 0.17 mA | 0.17 mA | 0.15 mA | 0.15 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
| Objectid | 1164070513 | - | 1164070516 | 1164070517 | 1164070520 | 1164070521 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
