3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 5 V
V
GS
= 0 V, V
DS
= 16 V
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Drain-to-Source On Resistance
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 4.5 V, I
D
= 100 mA
V
GS
= 2.5 V, I
D
= 50 mA
R
DS(ON)
V
GS
= 1.8 V, I
D
= 20 mA
V
GS
= 1.5 V, I
D
= 10 mA
V
GS
= 1.2 V, I
D
= 1.0 mA
Forward Transconductance
Source-Drain Diode Voltage
g
FS
V
SD
V
DS
= 5.0 V, I
D
= 125 mA
V
GS
= 0 V, I
D
= 10 mA
0.4
1.5
2.0
3.0
4.0
5.5
0.35
0.6
1.0
S
V
1.0
3.0
4.0
6.0
10
W
V
I
GSS
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
mA
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
20
50
200
100
100
nA
nA
V
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±5.0
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
f = 1.0 MHz, V
GS
= 0 V
V
DS
= 15 V
9.0
3.0
2.2
pF
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 4)
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 10 V, I
D
= 200 mA,
R
G
= 2.0
W
15
24
90
60
ns
4. Switching characteristics are independent of operating junction temperatures.
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2
NTUD3128N
TYPICAL PERFORMANCE CURVES
0.4
V
GS
= 3 V to 5 V
I
D,
DRAIN CURRENT (AMPS)
0.3
2.5 V
2.0 V
T
J
= 25°C
I
D,
DRAIN CURRENT (AMPS)
0.3
0.4
V
DS
≥
5 V
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0.2
0.2
1.5 V
0.1
1.0 V
0
0
1
2
3
4
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.1
0
0
4
1
3
2
V
GS
, GATE-T O-SOURCE VOLTAGE (VOLTS)
5
Figure 1. On-Region Characteristics
R
DS(on),
DRAIN-T O-SOURCE RESISTANCE (W)
R
DS(on),
DRAIN-T O-SOURCE RESISTANCE (W)
15
I
D
= 200 mA
T
J
= 25°C
2.5
Figure 2. Transfer Characteristics
T
J
= 25°C
2.0
V
GS
= 2.5 V
10
1.5
V
GS
= 4.5 V
1.0
5
0.5
0
0.05
0
0
1
2
3
4
5
0.1
0.15
0.2
0.25
0.3
0.35
0.4
V
GS
, GATE-T O-SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate Voltage
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
1000
1.75
R
DS(on),
DRAIN-T O-SOURCE
RESISTANCE (NORMALIZED)
1.5
I
D
= 200 mA
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
V
GS
= 0 V
1.25
1.0
100
T
J
= 150°C
T
J
= 125°C
10
0.75
0.5
0.25
0
-50
1
-25
0
25
50
75
100
125
150
0
4
8
12
16
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
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3
NTUD3128N
TYPICAL PERFORMANCE CURVES
15
C, CAPACITANCE (pF)
V
GS
= 0 V
T
J
= 25°C
C
iss
9
100
1000
V
DD
= 10 V
I
D
= 200 mA
V
GS
= 4.5 V
t, TIME (ns)
t
d(off)
t
f
t
r
10
t
d(on)
12
6
C
oss
3
C
rss
0
0
2
16 18 20
4
6
8
10 12 14
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.2
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
0.15
0.1
0.05
0
0
0.2
0.4
0.6
0.8
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1.0
Figure 9. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
NTUD3128NT5G
Package
SOT-963
(Pb-Free)
Shipping
†
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTUD3128N
PACKAGE DIMENSIONS
SOT-963
CASE 527AA-01
ISSUE A
A
D
6
5
1 2
e
b
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
MIN
NOM
MAX
0.40
0.45
0.50
0.10
0.15
0.20
0.05
0.10
0.15
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.05
0.10
0.15
0.95
1.00
1.05
INCHES
NOM
MAX
0.018 0.020
0.006 0.008
0.004 0.006
0.039 0.041
0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
MIN
0.016
0.004
0.002
0.037
0.03
-Y-
-X-
4
E
3
L
H
E
DIM
A
b
C
D
E
e
L
H
E
C
0.08 X Y
SOLDERING FOOTPRINT*
0.35
0.014
0.35
0.014
0.90
0.0354
0.20
0.08
0.20
0.08
SCALE 20:1
mm
inches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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