NTTFS4945N
Power MOSFET
Features
30 V, 34 A, Single N−Channel,
m8FL
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
R
DS(on)
MAX
9.0 mW @ 10 V
13 mW @ 4.5 V
I
D
MAX
34 A
Applications
•
Power Load Switch
•
Notebook Battery Management
•
Motor Control
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
11.2
8.0
2.16
15.7
11.3
4.30
7.1
5.1
0.89
34
24.4
20
102
−55
to
+150
20
6.0
26.5
W
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
MARKING DIAGRAM
1
1
WDFN8
(m8FL)
CASE 511AB
4945
A
Y
WW
G
S
S
S
G
4945
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 23 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ORDERING INFORMATION
Device
NTTFS4945NTAG
NTTFS4945NTWG
Package
Shipping
†
WDFN8 1500/Tape & Reel
(Pb−Free)
WDFN8 5000/Tape & Reel
(Pb−Free)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
January, 2011
−
Rev. 2
1
Publication Order Number:
NTTFS4945N/D
NTTFS4945N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm
2
, 1 oz. Cu).
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
6.3
57.8
141.2
29.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
I
D
= 20 A
I
D
= 10 A
I
D
= 20 A
I
D
= 10 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
15
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.2
1.7
4.0
6.4
6.4
9.5
9.3
28.5
2.2
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
9.0
mW
13
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 1.5 V, I
D
= 15 A
S
1194
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
470
11
7.7
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 20 A
2.1
4.0
1.1
V
GS
= 10 V, V
DS
= 15 V, I
D
= 20 A
17.3
pF
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
10
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
21
16
2.0
ns
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4945N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
7.0
19
20
2.0
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 20 A
0.81
0.73
28.5
15.2
13.3
17.7
nC
ns
1.0
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.38
0.054
1.3
1.1
2.0
nH
W
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4945N
TYPICAL CHARACTERISTICS
50
40
4V
30
3.2 V
20
10
0
3.0 V
2.8 V
2.6 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
48
44
I
D
, DRAIN CURRENT (A)
40
36
32
28
24
20
16
12
8
4
0
0.5
T
J
= 25°C
V
GS
= 10 V
4.5 V
T
J
= 25°C
3.6 V
3.4 V
V
DS
≥
10 V
I
D
, DRAIN CURRENT (A)
T
J
= 125°C
T
J
=
−55°C
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.060
0.050
0.040
0.030
0.020
0.010
0.000
I
D
= 20 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
10
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
2
3
4
5
6
V
GS
(V)
7
8
9
10
20
30
40
50
60
70
80
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
2.0
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
I
D
= 20 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTTFS4945N
TYPICAL CHARACTERISTICS
1400
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1200
C, CAPACITANCE (pF)
1000
800
600
400
200
0
0
5
10
C
rss
15
20
25
30
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
12
11
10
9
8
7
6
5
4
3
2
1
0
Q
gs
Q
gd
V
DD
= 15 V
V
GS
= 10 V
I
D
= 20 A
10
15
20
T
J
= 25°C
Q
T
QT
0
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g,
TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
100
t, TIME (ns)
t
d(off)
t
f
t
r
10
t
d(on)
30
25
20
15
10
5
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.0
1
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100
10
1
0.1
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
10
ms
100
ms
1 ms
10 ms
dc
30
25
20
15
10
5
0
Figure 10. Diode Forward Voltage vs. Current
I
D
= 23 A
I
D
, DRAIN CURRENT (A)
0.01
0.01
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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