Freescale Semiconductor
Technical Data
Document Number: MRF6VP121KH
Rev. 2, 12/2009
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
•
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 150 mA, P
out
=
1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128
μsec,
Duty Cycle = 10%
Power Gain — 20 dB
Drain Efficiency — 56%
•
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak
Power
Features
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Push-Pull Operation
•
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP121KHR6
MRF6VP121KHSR6
965-1215 MHz, 1000 W, 50 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D-05, STYLE 1
NI-1230
MRF6VP121KHR6
CASE 375E-04, STYLE 1
NI-1230S
MRF6VP121KHSR6
PARTS ARE PUSH-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
-0.5, +110
-6.0, +10
-65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
©
Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF6VP121KHR6 MRF6VP121KHSR6
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 67°C, 1000 W Pulsed, 128
μsec
Pulse Width, 10% Duty Cycle,
50 Vdc, I
DQ
= 150 mA
Case Temperature 62°C, Mode-S Pulse Train, 80 Pulses of 32
μsec
On, 18
μsec
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, I
DQ
= 150 mA
Symbol
Z
θJC
0.02
0.07
Value
(1,2)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Class
1B (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(3)
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 165 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(3)
(V
DS
= 10 Vdc, I
D
= 1000
μAdc)
Gate Quiescent Voltage
(4)
(V
DD
= 50 Vdc, I
D
= 150 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(3)
(V
GS
= 10 Vdc, I
D
= 2.7 Adc)
Dynamic Characteristics
(3)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.27
86.7
539
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
0.9
1.5
—
1.6
2.2
0.15
2.4
3
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
10
100
μAdc
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(4)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W Peak (100 W Avg.),
f = 1030 MHz, 128
μsec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
19
54
—
20
56
-23
22
—
-9
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push-pull configuration.
(continued)
MRF6VP121KHR6 MRF6VP121KHSR6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Pulsed RF Performance — 785 MHz
(In Freescale 785 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W
Peak (100 W Avg.), f = 785 MHz, 128
μsec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
—
—
—
18.9
57.8
-16.6
—
—
—
dB
%
dB
Pulsed RF Performance — 1030 MHz
(In Freescale 1030 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W
Peak (100 W Avg.), f = 1030 MHz, Mode-S Pulse Train, 80 Pulses of 32
μsec
On, 18
μsec
Off, Repeated Every 40 msec, 6.4% Overall Duty
Cycle
Power Gain
Drain Efficiency
Burst Droop
G
ps
η
D
BD
rp
—
—
—
19.8
59.0
0.21
—
—
—
dB
%
dB
Pulsed RF Performance — 1090 MHz
(In Freescale 1090 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W
Peak (100 W Avg.), f = 1090 MHz, 128
μsec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
—
—
—
21.4
56.3
-25.3
—
—
—
dB
%
dB
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
3
V
BIAS
+
C1
C2
C3
C4
L1
BALUN 1
R1
Z11
Z3
Z5
Z7
Z9
C13
Z13
Z15
Z17
Z19 Z21
C17
C18
C21
C22
+
C23
+
C24
V
SUPPLY
RF
INPUT Z1
Z2
C10
Z4
C11
R2
C14
Z6
Z8
C12
Z10
DUT
C15
C16
RF
OUTPUT
Z23
C9
Z12
Z14
Z16
Z18
Z20 Z22
C19
L2
C20
BALUN 2
V
BIAS
+
C5
C6
C7
C8
+
C25
C26
C27
+
C28
V
SUPPLY
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
0.140″ x 0.083″
0.300″ x 0.083″
0.746″ x 0.220″
0.075″ x 0.631″
0.329″ x 0.631″
0.326″ x 0.631″
0.240″ x 0.631″
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z23
PCB
0.143″ x 0.631″
0.135″ x 0.631″
0.102″ x 0.632″
0.130″ x 0.631″
0.736″ x 0.215″
0.410″ x 0.083″
Arlon CuClad 250GX-0300-55-22, 0.030″,
ε
r
= 2.55
Figure 2. MRF6VP121KHR6(HSR6) Test Circuit Schematic
Table 5. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values
Part
Balun 1, 2
C1, C5
C2, C6
C3, C7
C4, C8, C10, C11, C17,
C18, C19, C20, C21, C25
C9
C12, C16
C13, C14, C15
C22, C26
C23, C24, C27, C28
L1, L2
R1, R2
Balun Anaren
22
μF,
25 V Tantalum Capacitors
2.2
μF,
50 V Chip Capacitors
0.22
μF,
100 V Chip Capacitors
36 pF Chip Capacitors
1.0 pF Chip Capacitor
0.8-8.0 pF Variable Capacitors
5.1 pF Chip Capacitors
0.022
μF,
100 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
Inductors 3 Turn
1000
Ω,
1/4 W Chip Resistors
Description
3A412
TPSD226M025R
C1825C225J5RAC
C1210C224K1RAC
ATC100B360JT500XT
ATC100B1R0CT500XT
27291SL
ATC100B5R1CT500XT
C1825C223K1GAC
MCGPR63V477M13X26-RH
GA3094-AL
CRCW12061001FKEA
Manufacturer
Part Number
Anaren
AVX
Kemet
Kemet
ATC
ATC
Johanson
ATC
Kemet
Multicomp
Coilcraft
Vishay
MRF6VP121KHR6 MRF6VP121KHSR6
4
RF Device Data
Freescale Semiconductor
C24
C1
C3
C2
C4
BALUN 1
MRF6VP121KH
Rev. 2
C22
C21
C23
-
BALUN 2
R1
C12
C13
L1
C10
C11
C15
CUT OUT AREA
C16
C17
C18
C19
C20
C9
R2
C8
C6
C7
C14
L2
C25
C26
C5
C27
-
Figure 3. MRF6VP121KHR6(HSR6) Test Circuit Component Layout
C28
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
5
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