aviation and weather radar applications. This device
puts out 7 W pulsed and is designed to operate at an
8% duty cycle.
The MAAP-011022 is packaged in a lead-free 6 mm
28-lead plastic package for high volume
manufacturing. This IC utilizes one of MACOM’s
advanced 0.5 µm processes, which has been
optimized so amplifiers, passives, and control
components can be combined on a single IC.
This MAAP-011022 is specifically targeted for
avionics and weather radar.
DET
OUT
HPA
CNTRL
VDBx
VGBx
Pin Configuration
3,4,5,6
Pin No.
1
2
3
4
5
6
7
8
9
Function
VD2A
No Connection
VD1A
No Connection
VG2A
VG1A
No Connection
No Connection
RF
IN
No Connection
No Connection
No Connection
HPA
CNTRL
-5 V
Pin No.
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
7
Function
VC
OUT
VG1B
VG2B
No Connection
VD1B
No Connection
VD2B
No Connection
RF
OUT
No Connection
No Connection
No Connection
DET
OUT
T
SENSE
Ground Pad
Ordering Information
1,2
Part Number
MAAP-011022-TR0500
MAAP-011022-001SMB
Package
500 piece reel
Sample Test Board
10
11
12
13
14
1. Reference Application Note M513 for reel size information.
2. Sample board includes 5 loose parts.
*Restrictions on Hazardous Substances,
European Union Directive 2011/65/EU.
1
3. See the evaluation board schematic for the recommended
external components.
4. VDAx and VDBx are connected to the +10 V bias.
5. The gates are controlled internally from the bias circuit shown
on the evaluation board schematic but need to be bypassed
as shown. VGAx must be connected to VGBx.
6. HPA
CNTRL
is tied to +5 V for drain switching. For gate
switching the PA is turned off when HPA
CNTRL
is at 0 V.
7. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011022
7 W Pulsed High Power Amplifier
2.7 - 3.0 GHz, 6 mm PQFN 28-LD
Electrical Specifications: Freq. = 2.7 - 3.0 GHz, T
A
= 25°C, VDAx = VDBx = +10 V,
I
DQ
= ~2.0 A, Z
0
= 50
Ω, 80
µs Pulse, 8% Duty Cycle
Parameter
Small-Signal Gain
Input / Output Return Loss
P1dB
P
SAT
(P
IN
= +18 dBm)
PAE
Power Detector Voltage
8
@ P3dB
Temperature Sensor Voltage
9
@ 25°C
-5 V Current
Drain Current
8. Under RF drive.
9. Slope –1.69 mV/°C
Rev. V1
Units
dB
dB
dBm
dBm
%
mV
V
mA
A
Min.
21.0
-
Typ.
23.5
20
37.5
Max.
25
-
-
-
-
-
-3.00
20.0
3.4
37.0
-
-
-3.50
-
-
38.3
28.0
2200
-3.24
9.0
2.5
Absolute Maximum Ratings
10,11,12,13
Parameter
RF Input Power
Drain Voltage
Gate Voltage (VGAx, VGBx)
Negative Voltage
Duty Cycle
Operating Temperature
Junction Temperature
14
Storage Temperature
Absolute Maximum
+25 dBm
12 V
-3 V to 0 V
13
-6 V ≤ -5 V Bias ≤ 0.5 V
10 %
-40°C to +85°C
160°C
-65°C to +125°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide and Silicon Integrated Circuits
are sensitive to electrostatic discharge (ESD) and
can be damaged by static electricity. Proper ESD
control techniques should be used when handling
these devices.
10. Exceeding any one or combination of these limits may
cause permanent damage to this device.
11. MACOM does not recommend sustained operation near
these survivability limits.
12. Operating at nominal conditions with T
J
≤ 160°C will ensure
MTTF > 1 x 10
6
hours.
13. VGAx, VGBx can go to +0.3 V if no drain voltage is applied.
14. Junction Temperature (T
J
) = T
C
+
Ө
JC
* ((V * I) - (P
OUT
- P
IN
))
Typical thermal resistance:
80 µs pulse, 8% duty cycle,
Ө
JC
= 2.0°C/W
a) For T
C
= +25°C,
T
J
= 62 °C @ 10 V, 2.5 A,
P
OUT
= 6.6 W, P
IN
= 0.07 W
b) For T
C
= +85°C,
T
J
= 143 °C @ 10 V, 3.4 A,
P
OUT
= 5.0 W, P
IN
= 0.07 W
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011022
7 W Pulsed High Power Amplifier
2.7 - 3.0 GHz, 6 mm PQFN 28-LD
Evaluation Board Schematic
15,16
Rev. V1
15. The standard build configuration is to omit resistors R15 & R16. This configuration activates the on-board +10 V pulser circuit.
16. In order to bypass on-board +10 V pulser circuit, remove R13, R14, R17 & R18, and add R15 & R16.
Parts List
Part
CR1
C2
C3, C18
C4, C5
C13
C14, C15
C22, C25
R1, R5 - R9
R2 - R4
R10, R11
R12
R13 - R18
Value
50 V Diode
.01 µF
100 pF
150 µF
0.1 µf
560 pF
1000 pF
0Ω
1 kΩ
180 Ω
0.02 Ω
0Ω
Case Style
-
0603
0603
-
0402
0402
0402
0402
1210
0402
4527
1206
Parts List
Part
J1
J7 - J10
Q1
U1
U2
Value
10 Row
Connector
IRF4905SPbF
8 W HPA
TC4421ESM
Case Style
Header
SMA
T0-220AB
6mm PQFN-28LD
8-SOIC
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011022
7 W Pulsed High Power Amplifier
2.7 - 3.0 GHz, 6 mm PQFN 28-LD
Rev. V1
Typical Performance Curves: VDAx=VDBx=10 V, I
DQ
=2.0 A (80 µs Pulse, 8% Duty Cycle)
Gain vs. Frequency
30
Input Return Loss vs. Frequency
-10
+25°C
-40°C
+85°C
25
-15
20
-20
15
+25°C
-40°C
+85°C
-25
10
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
-30
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency
-10
+25°C
-40°C
+85°C
Reverse Isolation vs. Frequency
-10
-20
-30
+25°C
-40°C
+85°C
-15
-20
-40
-50
-25
-60
-30
-70
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
Frequency (GHz)
Frequency (GHz)
Gain vs. Output Power
30
Drain Current vs. Output Power
0.4
25
0.3
20
+25°C
-40°C
+85°C
0.2
+25°C
-40°C
+85°C
15
0.1
10
20
25
30
35
40
0.0
20
25
30
35
40
4
Output Power (dBm)
Output Power (dBm)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011022
7 W Pulsed High Power Amplifier
2.7 - 3.0 GHz, 6 mm PQFN 28-LD
Rev. V1
Typical Performance Curves: VDAx=VDBx=10 V, I
DQ
=2.0 A (80 µs Pulse, 8% Duty Cycle)
P1dB vs. Frequency
41
40
39
38
37
36
35
2.70
+25°C
-40°C
+85°C
P3dB vs. Frequency
41
40
39
38
37
36
35
2.70
+25°C
-40°C
+85°C
2.75
2.80
2.85
2.90
2.95
3.00
2.75
2.80
2.85
2.90
2.95
3.00
Frequency (GHz)
Frequency (GHz)
PAE vs. Frequency
35
Power Detector Voltage vs. Output Power
2000
30
1600
25
1200
20
+25°C
-40°C
+85°C
800
15
400
10
2.70
0
2.75
2.80
2.85
2.90
2.95
3.00
20
25
30
35
40
Frequency (GHz)
Output Power (dBm)
Temperature Sensor Voltage vs. Temperature
-3.0
-3.1
-3.2
-3.3
-3.4
-3.5
-50
-25
0
25
50
75
100
5
Temperature (°C)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
三星刚出的旗舰新机Galaxy S III固然不错，但是高昂的价格不是每个人都能承受的起。昨天我们报道了一部山寨版的i9300，而现在该机价格和具体配置已经全部出炉。 这款山寨的Galaxy S III名叫HDC Galaxy S3，其外形甚至UI界面都与原型机异常相似。该机的三围为138×70×9.2mm，配备了一块4.7寸触摸屏，分辨率只有800×480像素。
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