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Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> T128F11TEB

T128F11TEB: 产品描述Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,; 产品类别模拟混合信号IC 触发装置; 文件大小374KB，共5页; 制造商EUPEC [eupec GmbH]

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T128F11TEB概述

Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,

T128F11TEB规格参数

参数名称	属性值
Objectid	1413702380
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	FAST
标称电路换相断开时间	20 µs
配置	SINGLE
关态电压最小值的临界上升速率	50 V/us
最大直流栅极触发电流	150 mA
最大直流栅极触发电压	2 V
最大维持电流	250 mA
JESD-30 代码	O-CXDB-X5
最大漏电流	30 mA
通态非重复峰值电流	2800 A
元件数量	1
端子数量	5
最大通态电流	128000 A
最高工作温度	125 °C
最低工作温度	-40 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	DISK BUTTON
认证状态	Not Qualified
最大均方根通态电流	300 A
断态重复峰值电压	1100 V
重复峰值反向电压	1100 V
表面贴装	YES
端子形式	UNSPECIFIED
端子位置	UNSPECIFIED
触发设备类型	SCR

T128F11TEB相似产品对比

	T128F11TEB	T128F10TEB	T128F10TEC	T128F10TEL	T128F10TEM	T128F11TEC	T128F11TEL	T128F11TEM
描述	Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,	Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element,	Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,	Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,	Silicon Controlled Rectifier, 300A I(T)RMS, 128000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,
Objectid	1413702380	1413702376	1413702484	1413702486	1413702244	1413702492	1413702494	1413702248
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	FAST	FAST	FAST	FAST	FAST	FAST	FAST	FAST
标称电路换相断开时间	20 µs	20 µs	20 µs	20 µs	20 µs	20 µs	20 µs	20 µs
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
关态电压最小值的临界上升速率	50 V/us	50 V/us	500 V/us	500 V/us	1000 V/us	500 V/us	500 V/us	1000 V/us
最大直流栅极触发电流	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA	150 mA
最大直流栅极触发电压	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
最大维持电流	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA	250 mA
JESD-30 代码	O-CXDB-X5	O-CXDB-X5	O-CXDB-X5	O-CXDB-X5	O-CXDB-X5	O-CXDB-X5	O-CXDB-X5	O-CXDB-X5
最大漏电流	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA
通态非重复峰值电流	2800 A	2800 A	2800 A	2800 A	2800 A	2800 A	2800 A	2800 A
元件数量	1	1	1	1	1	1	1	1
端子数量	5	5	5	5	5	5	5	5
最大通态电流	128000 A	128000 A	128000 A	128000 A	128000 A	128000 A	128000 A	128000 A
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大均方根通态电流	300 A	300 A	300 A	300 A	300 A	300 A	300 A	300 A
断态重复峰值电压	1100 V	1000 V	1000 V	1000 V	1000 V	1100 V	1100 V	1100 V
重复峰值反向电压	1100 V	1000 V	1000 V	1000 V	1000 V	1100 V	1100 V	1100 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
端子位置	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
触发设备类型	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR

T128F11TEB

T128F11TEB概述

T128F11TEB规格参数

T128F11TEB相似产品对比

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