Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW66F, BCW66G
BCW66H
GENERAL PURPOSE TRANSISTOR
N–P–N transistor
Marking
BCW 66F = EF
BCW 66G = EG
BCW 66H = EH
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
D.C. current gain
–I
C
= 100
mA;
–V
CE
= 10 V
–I
C
= 10 mA; V
CE
= 1 V
–I
C
= 100 mA; V
CE
= 1 V
–I
C
= 500 mA; V
CE
= 2 V
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
h
FE
BCW66F
max. 75
max. 45
max.
5
max. 800
max 225
min.
min.
min.
min.
35
75
100
35
66G
75
45
5
800
225
50
110
160
400
60
66H
75
45
5
800
225
80
180
250
630
100
V
V
V
mA
mW
max. 250
Continental Device India Limited
Data Sheet
Page 1 of 3
BCW66F, BCW66G
BCW66H
RATINGS
(at T
A
= 25°C unless otherwise
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at T
amb
= 25°C
Storage temperature
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
specified)
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
stg
BCW 66F
max. 75
max. 45
max.
5
max. 800
max 225
–55
66G 66H
75
75
45
45
5
5
800
800
225
225
to +150
V
V
V
mA
mW
°C
R
th j–a
556
556
556
°C/mW
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–V
(BR)CEO
min.
45
–I
C
= 10 mA; I
B
= 0
Collector–emitter breakdown voltage
–V
(BR)CES
min.
75
–I
C
= 10
mA;
V
EB
= 0
Emitter–base breakdown voltage
–V
(BR)EBO
min.
5
–I
E
= 10
mA;
I
C
= 0
Collector cut–off current
–I
CES
max. 20
–V
CE
= 45 V; I
C
= 0 V
Emitter cut–off current
I
EBO
max. 20
V
EB
= 4 V; I
C
=0
Output capacitance at f = 1 MHz
C
c
max. 12
I
E
= 0; –V
CB
= 10 V
Input capacitance at f = 1 MHz
C
e
max. 80
I
C
= 0; –V
EB
= 0.5 V
Saturation voltages
–I
C
= 500 mA; –I
B
= 50 mA
–I
C
= 100 mA; –I
B
= 10 mA
–I
C
= 500 mA; –I
B
= 50 mA
Noise figure at R
S
= 1 kW
–I
C
= 0.2 mA; –V
CE
= 5 V
f = 1 KHz, BW = 200 Hz
Current Gain-Bandwidth Product
I
C
= 20 mA, V
CE
= 10 V, f = 100 MHz
45
75
5
20
20
12
80
45
75
5
20
20
12
80
V
V
V
nA
nA
pF
pF
–V
CEsat
–V
CEsat
–V
BEsat
max.
typ.
max.
0.7
0.3
2
0.7
0.3
2
0.7 V
0.3 V
2 V
NF
max.
10
10
10
dB
min.
100
100
100 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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