NTD78N03
Power MOSFET
25 V, 78 A, Single N−Channel, DPAK
Features
•
Low R
DS(on)
•
Optimized Gate Charge
•
Pb−Free Packages are Available
Applications
V
(BR)DSS
25 V
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R
DS(on)
TYP
4.6 @ 10 V
6.5 @ 4.5 V
D
I
D
MAX
78 A
•
Desktop VCORE
•
DC−DC Converters
•
Low Side Switch
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Continuous Drain
Current (R
qJC
)
Power Dissipation
(R
qJC
)
Pulsed Drain Current
Current Limited by Package
Drain to Source dV/dt
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
L = 5.0 mH, I
L
(pk) = 17 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
C
= 25°C
Steady
State
T
C
= 85°C
T
C
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
t
p
= 10
ms
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
dV/dt
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
25
"20
14.8
11.5
2.3
11.4
8.8
1.4
78
56
64
210
45
8.0
−55 to 175
78
722.5
W
A
A
V/ns
°C
A
mJ
W
A
W
Unit
V
V
A
N−Channel
G
S
4
4
4
A
1 2
3
1
1
2
2 3
3
CASE 369AA
CASE 369D
DPAK
DPAK
(Bend Lead) (Straight Lead)
STYLE 2
STYLE 2
CASE 369AD
IPAK
(Straight Lead)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
78
N03G
4
Drain
YWW
78
N03G
4
Drain
YWW
78
N03G
T
L
260
°C
THERMAL RESISTANCE
Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
qJC
R
qJA
R
qJA
1.95
65
110
°C/W
2
1 2 3
1 Drain 3
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
Y
WW
78N03
G
= Year
= Work Week
= Device Code
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
1
September, 2006 − Rev. 6
Publication Order Number:
NTD78N03/D
NTD78N03
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
25
24
1.5
10
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
"20
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.0
1.6
−5.0
3.0
V
mV/°C
V
GS
= 10 V, I
D
= 78 A
V
GS
= 4.5 V, I
D
= 36 A
4.6
6.5
22
6.0
7.8
mW
Forward Transconductance
gFS
V
DS
= 10 V, I
D
= 15 A
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
0.83
0.7
39
V
GS
= 0 V, dIs/d
t
= 100 A/ms,
I
S
= 20 A
17.8
21
33
nC
ns
1.0
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 20 A, R
G
= 3.0
W
11
68
23
42
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 20 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
1920
960
420
25.5
2.4
5.3
18.2
nC
35
2250
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
t
RR
ta
tb
Q
RR
L
S
L
D
L
G
R
G
Ta = 25C
2.49
0.02
3.46
1.0
W
nH
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD78N03
100
90
I
D
, DRAIN CURRENT (AMPS)
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
3V
T
J
= 25°C
2.6 V
10
9V
3.4 V
3.2 V
V
GS
= 4 V
4.5 V
5V
3.8 V
3.6 V
I
D
, DRAIN CURRENT (AMPS)
160
150 V
DS
≥
10 V
140
130
120
110
100
90
80
70
60
50
T
J
= 125°C
40
30
T
J
= 25°C
20
T
J
= −55°C
10
0
1
2
0
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.01
V
GS
= 10 V
T
J
= 125°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.015
T
J
= 25°C
0.009
0.008
0.007
T
J
= 25°C
0.01
0.006
0.005
0.004
0.003
V
GS
= 4.5 V
V
GS
= 10 V
0.005
T
J
= −55°C
0.002
0.001
0
10
20
30
40
50
60
70
80
0
55
60
65
70
75
80
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Drain Current and Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
3
2.5
2
1.5
1
0.5
0
−50
10
I
D
= 78 A
V
DS
= 4.5 V
I
DSS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
100
−25
0
25
50
75
100
125
150
175
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
NTD78N03
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6000
5000
C, CAPACITANCE (pF)
C
iss
4000
C
rss
3000
2000
1000
0
10
C
rss
5
V
GS
0
V
DS
5
10
15
20
25
C
iss
C
oss
V
DS
= 0 V
V
GS
= 0 V
8
V
DS
6
T
J
= 25°C
Q
T
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
15
4
V
GS
Q
1
Q
2
10
2
I
D
= 20 A
T
J
= 25°C
0
0
5
10
15
20
25
30
5
0
35
Q
g
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
I
S
, SOURCE CURRENT (AMPS)
100
V
DS
= 20 V
I
D
= 20 A
V
GS
= 4.5 V
t, TIME (ns)
100
t
r
t
f
t
d(off)
10
t
d(on)
80
V
GS
= 0 V
70 T = 25°C
J
60
50
40
30
20
10
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.2
1
1
10
R
G
, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
10
ms
100
100
ms
1 ms
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
10 ms
dc
800
700
600
500
400
300
200
100
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
175
I
D
= 78 A
1
0.1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD78N03
di/dt
I
S
t
rr
t
a
t
b
TIME
t
p
I
S
0.25 I
S
Figure 13. Diode Reverse Recovery Waveform
1000
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CYCLE
100
D = 0.5
0.2
0.1
0.05
0.02
0.01
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
10
1
P
(pk)
t
2
DUTY CYCLE, D = t
1
/t
2
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
t
1
0.1
SINGLE PULSE
0.01
1E−05
1E−04
R
qJA
(t) = r(t) R
qJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
A
= P
(pk)
R
qJA
(t)
1E+02
1E+03
1E+01
Figure 14. Thermal Response − Various Duty Cycles
ORDERING INFORMATION
Order Number
NTD78N03
NTD78N03G
NTD78N03T4
NTD78N03T4G
NTD78N03−1
NTD78N03−1G
NTD78N03−35
NTD78N03−35G
Package
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK Straight Lead
DPAK Straight Lead
(Pb−Free)
DPAK−3 Straight Lead
(3.5
"
0.15 mm)
DPAK−3 Straight Lead
(3.5
"
0.15 mm)
(Pb−Free)
75 Units/Rail
75 Units/Rail
2500 Tape & Reel
Shipping
†
75 Units/Rail
75 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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