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BR251

产品描述25 A, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小246KB,共2页
制造商DCCOM [ DC COMPONENTS ]
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BR251概述

25 A, SILICON, BRIDGE RECTIFIER DIODE

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DC COMPONENTS CO., LTD.
R
BR2505
THRU
BR2510
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts
CURRENT - 25 Amperes
FEATURES
* Plastic case with heatsink for Maximum Heat Dissipation
* Surge overload ratings-400 Amperes
* Low forward voltage drop
BR-25
TYP
METAL HEAT SINK
MECHANICAL DATA
* Case: Molded plastic with heatsink
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Plated .25"(6.35mm) Faston lugs, Solderable per
MIL-STD-202E, Method 208 guaranteed
* Polarity: As marked
* Mounting position: Any
* Weight: 30 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage Drop per element at 12.5A DC
Maximum DC Reverse Current at Rated
DC Blocking Voltage per element
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance ( Note1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
NOTES : 1.Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Case per leg.
@T
A
= 25 C
@T
A
= 100 C
I
2
t
C
J
RθJ C
T
J,
T
STG
o
o
BR2505
50
35
50
BR251
100
70
100
BR252
200
140
200
BR254
400
280
400
25
400
1.1
10
500
374
300
2.5
-55 to + 150
BR256
600
420
600
BR258
800
560
800
BR2510
UNITS
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
uAmps
A
2
Sec
pF
0
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
C/W
0
C
248

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