TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
DEVICES
LEVELS
2N2484UA
2N2484UB
2N2484UBC *
*
Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
(1)
JAN
JANTX
JANTXV
JANS
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
, T
stg
Value
60
60
6.0
50
360
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
°C
TO-18 (TO-206AA)
2N2484
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Ambient-to-Case
2N2484
2N2484UA
2N2484UB, UBC
1. See 19500/376 for Thermal Performance Curves.
2N2484UA
Symbol
R
θJA
Value
325
275
350
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Emitter Cutoff Current
V
CE
= 45Vdc
Collector-Base Cutoff Current
V
CB
= 45Vdc
V
CB
= 60Vdc
Collector-Emitter Cutoff Current
V
CE
= 5.0Vdc
V
(BR)CEO
I
CES
60
5.0
5.0
10
2.0
Vdc
ηAdc
ηAdc
μAdc
ηAdc
2N2484UB, UBC
(UBC = Ceramic Lid Version)
Symbol
Min.
Max.
Unit
I
CBO
I
CEO
T4-LDS-0058 Rev. 1 (080853)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 6.0Vdc
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 1.0μAdc, V
CE
= 5.0Vdc
I
C
= 10μAdc, V
CE
= 5.0Vdc
I
C
= 100μAdc, V
CE
= 5.0Vdc
I
C
= 500μAdc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 1.0mAdc, I
B
= 100μAdc
Base-Emitter Voltage
V
CE
= 5.0Vdc, I
C
= 100μAdc
45
200
225
250
250
225
500
675
800
800
800
ηAdc
μAdc
Symbol
Min.
Max.
Unit
I
EBO
2.0
10
h
FE
V
CE(sat)
V
BE(ON)
0.5
0.3
Vdc
0.7
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio
I
C
= 50μAdc, V
CE
= 5.0Vdc, f = 5.0MHz
I
C
= 500μAdc, V
CE
= 5.0Vdc, f = 30MHz
Open Circuit Output Admittance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
Open Circuit Reverse-Voltage Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
Input Impedance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
Output Capacitance
V
CB
= 5.0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle
≤
2.0%.
|h
fe
|
3.0
2.0
0.7
40
8.0 x 10
-4
3.5
250
24
900
5.0
6.0
pF
pF
μmhos
Symbol
Min.
Max.
Unit
h
oe
h
re
h
je
h
fe
C
obo
C
ibo
kΩ
T4-LDS-0058 Rev. 1 (080853)
Page 2 of 2
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