Thyristor/SMB Series
Description of Part Number
P thyristor for circuit protection
Part Number
Code
P
①
030
②
Main
0
③
S
④
Suffix
B
⑤
①
PRODUCT TYPE
Product type
P
②
MEDIAN VOLTAGE RATING
Code
030
③
CONSTRUCTION VARIABLE
Code
0
1
2
3
④
PACKAGE TYPE
Code
E
S
R
L
M
TYPE
Median voltage rating
30 V
Product shape
One chip
Unidirectional part
Two chips
Three chips
PACKAGE TYPE
TO–92
SMB/DO–214AA
SMA/DO-214AC
DO-15
DO-27
⑤
IPP RATING
Code
A
B
C
D
IPP RATING
150
A (8x20 µs)
250
A (8x20 µs)
400
A (8x20 µs)
1000 A (8x20 µs)
Applications
When protecting telecommunication circuits,
P
devices are connected across Tip and Ring for metallic protection
and across Tip and Ground and Ring and Ground for longitudinal protection. They typically are placed behind some
type of current-limiting device. Common applications include:
• Central office line cards (SLICs)
• T-1/E-1, ISDN, and xDSL transmission equipment
• Customer Premises Equipment (CPE) such as phones, modems, and caller ID adjunct boxes
• PBXs, KSUs, and other switches
• Primary protection including main distribution frames, five-pin modules, building entrance equipment, and station
protection modules
• Data lines and security systems
• CATV line amplifiers and power inserters
• Sprinkler systems
REV.2014.05.01
01 | www.spsemi.cn
Thyristor/SMB Series
P Device
（Ｓ
series）
DO-214AA
P
solid state protection devices protect telecommunications equipment such as
modems, line cards, fax machines, and other CPE.
P
devices are used to enable equipment to meet various regulatory requirements including
GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).
Electrical Parameters
Part
Number *
P0080S_
P0300S_
P0640S_
P0720S_
P0900S_
P2300S_
P2600S_
P3100S_
P3500S_
V
RM
Volts
6
25
58
65
75
190
220
275
320
V
S
Volts
25
40
77
88
98
260
300
350
400
V
T
Volts
4
4
4
4
4
4
4
4
4
I
DRM
µAmps
5
5
5
5
5
5
5
5
5
IS
mAmps
800
800
800
800
800
800
800
800
800
I
T
Amps **
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mAmps
50
150
150
150
150
150
150
150
150
C
O
pF
50-125
70-175
55-140
55-140
55-140
45-115
40-100
35-90
30-75
* For individual
“SA” “S
B” and
“SC”surge ratings, see table below
,
,
Surge Ratings
Series
A
B
C
I
PP
2x10 µs
Amps
150
250
500
I
PP
8x20 µs
Amps
150
250
400
I
PP
10x160 µs
Amps
90
150
200
I
PP
10x560 µs
Amps
50
100
150
I
PP
10x1000 µs
Amps
45
80
100
I
TSM
60 Hz
Amps
20
30
50
di/dt
Amps/µs
500
500
500
Thermal Considerations
Package
DO-214AA
Symbol
T
J
T
S
R
B
J
A
Parameter
Operating Junction
Temperature
Storage
Temperature Range
Thermal
Resistance:
Junction to Ambient
Value
-40 to +150
-65 to +150
90
Unit
°C
°C
°C/W
DO-214AA (SMB J-Bend)
0.102 (2.6)
0.083 (2.1)
0.086 (2.20)
0.073 (1.85)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.193 (4.90)
0.160 (4.06)
0.012 (0.3) MAX.
0.220 (5.59)
0.195 (4.95)
Dimensions in inches and(millimeters)
REV.2014.05.01
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Thyristor/SMB Series
The Basic Characteristic of the P
The principle introduction
Operation
In the standby mode,
P
devices exhibit a high off-state impedance, eliminating excessive leakage currents
and appearing transparent to the circuits they protect. Upon application of a voltage exceeding the switching
voltage (V
S
),
P
devices crowbar and simulate a short circuit condition until the current flowing through the
device is either interrupted or drops below the
P
device’s holding current (I
reset and return to their high off-state impedance.
H
).
Once this occurs,
P
devices
Figure1 V-I Characteristics
Figure2 tr x td Pulse Wave-form
Figure3
Normalized V
S
Change versus Junction Temperature
Figure4
Normalized DC Holding Current
REV.2014.05.01
03 | www.spsemi.cn
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