SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 APRIL 1996
FEATURES
* h
FE
up to 5k at I
c
= 500mA
* Fast switching
* Low V
CE(sat)
at High I
c
PARTMARKING DETAILS 614
FMMT614
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
MIN.
120
100
10
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
300
130
14
0.02
10
10
100
0.9
0.78
1.7
1.5
15K
5K
6
0.7
2.5
pF
µ
s
µ
s
VALUE
120
100
10
2
500
500
-55 to +150
UNIT
V
V
V
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
MAX.
UNIT
V
V
V
nA
µ
A
CONDITIONS.
I
C
=10
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=100V, I
E
=0
V
CES
=100V, I
E
=0
V
EB
=8V, I
C
=0
I
C
=500mA, I
B
=5mA*
I
C
=100mA, I
B
=0.1mA
I
C
=500mA, I
B
=5mA*
I
C
=500mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
V
CB
=10V, f=100mHz
I
C
=100
µ
A, I
B
=0.1mA
V
S
=10V
Collector Cut-Off Current I
CBO
Collector Cut-Off Current I
CES
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Output Capacitance
Switching Times
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
C
obo
t
on
t
off
nA
V
V
V
V
1.0
0.9
1.9
1.8
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.
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