NTD4815N, NVD4815N
Power MOSFET
Features
30 V, 35 A, Single N−Channel, DPAK/IPAK
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC−Q101 Qualified and PPAP Capable
−
NVD4815N
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
30 V
R
DS(ON)
MAX
15 mW @ 10 V
25 mW @ 4.5 V
D
35 A
I
D
MAX
Applications
•
CPU Power Delivery
•
DC−DC Converters
•
High Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
30
±20
8.5
6.5
1.92
6.9
5.3
1.26
35
27
32.6
87
35
−55
to
+175
27
6
60.5
W
A
A
°C
A
V/ns
mJ
4
Drain
4815NG
YWW
W
A
W
1 2
A
3
Unit
V
V
A
4
G
S
N−CHANNEL MOSFET
4
1
2 3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369AC
3 IPAK
(Straight Lead)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4815NG
YWW
= Year
= Work Week
= Device Code
= Pb−Free Package
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
I
L
= 11 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
Y
WW
4815N
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
−
Rev. 7
Publication Order Number:
NTD4815N/D
NTD4815N, NVD4815N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
4.6
3.5
78
119
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V to
11.5 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
W
10.5
21.4
11.4
3.5
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
770
181
108
6.0
0.9
2.5
3.1
14.1
nC
6.6
nC
pF
g
FS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 15 V, I
D
= 10 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
5.6
12
11.5
21
18.3
6.0
2.5
V
mV/°C
15
mW
25
S
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4815N, NVD4815N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
1.0
0.92
15.3
8.7
6.6
5.5
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
6.3
17.6
18.4
2.3
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
2.49
0.0164
1.88
3.46
2.6
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4815N, NVD4815N
TYPICAL PERFORMANCE CURVES
60
I
D
, DRAIN CURRENT (AMPS)
50
40
4V
30
20
10
0
3.8 V
3.6 V
3.4 V
3.2 V
3V
0
1
2
3
4
5
80
T
J
= 25°C
4.5 V
I
D
, DRAIN CURRENT (AMPS)
70
60
50
40
30
20
10
0
0
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5.5 V to 10 V
5V
V
DS
≥
10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
0.005
0
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
Figure 2. Transfer Characteristics
T
J
= 25°C
0.025
0.020
V
GS
= 4.5 V
0.015
0.010
0.005
0
V
GS
= 11.5 V
2
3
4
5
6
7
8
9
10
11
12
5
10
15
20
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.0
I
D
= 30 A
V
GS
= 10 V
1.5
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 175°C
1000
T
J
= 125°C
100
1.0
0.5
−50 −25
10
0
25
50
75
100
125
150
175
4
8
12
16
20
24
28
32
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
NTD4815N, NVD4815N
TYPICAL PERFORMANCE CURVES
1500
V
DS
= 0 V
V
GS
= 0 V
1400
1300
1200
1100 C
iss
1000
900
800
700
600
500 C
rss
400
300
200
100
C
rss
0
5
5
10
0
10
V
GS
V
DS
6
5
4
3
2
1
0
I
D
= 30 A
T
J
= 25°C
0
1
2
3
4
5
Q
G
, TOTAL GATE CHARGE (nC)
6
7
V
DS
Q
T
Q
1
Q
2
V
GS
16
14
12
10
8
6
4
2
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
C
iss
C
oss
15
20
25
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
IS, SOURCE CURRENT (AMPS)
V
GS
= 0 V
25
20
15
10
5
0
0.4
T
J
= 25°C
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
t
r
t, TIME (ns)
100
t
d(off)
10
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
70
60
50
40
30
20
10
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 11 A
100
10
ms
100
ms
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1 ms
10 ms
dc
10
1
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
50
75
150
100
125
T
J
, JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
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