®
BZW06-5V8/376
BZW06-5V8B/376B
TRANSIL
TM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 600 W (10/1000µs)
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
PP
P
I
FSM
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s a 5mm
from case.
Tj initial = Tamb
T
amb
= 75°C
tp = 10ms
Tj initial = T
amb
Value
600
1.7
100
Unit
W
W
A
°C
°C
°C
DO-15
T
stg
T
j
T
L
- 65 to + 175
175
230
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit.
L
lead
= 10 mm
Parameter
Value
60
100
Unit
°C/W
°C/W
February 2003 - Ed : 3A
1/6
BZW06-xx
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
I PP
VCL
VBR
V RM
VF
I RM
V
I
IF
α
T
V
F
Types
I
RM
@ V
RM
max
µA
1000
500
10
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
BR
min
@
I
R
V
CL
@ I
PP
max
10/1000µs
V
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
64.8
77.0
92.0
113
137
165
207
246
274
A
57.0
53.0
41
36.0
28.0
24.0
19.6
18.0
16.0
14.5
13.1
12.0
11.1
9.3
7.8
6.5
5.3
4.4
3.6
2.9
2.4
2.2
V
CL
@ I
PP
max
8/20µs
V
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
84
100
121
146
178
212
265
317
353
A
298
276
215
184
147
123
102
93
83
75
68
62
57
48
40
33
27.0
22.5
19.0
15.0
12.6
11.3
αT
max
note3
10
-4
/°C
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.6
10.0
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
C
typ
note4
pF
4000
3700
2800
2300
1900
1600
1350
1250
1150
1075
1000
950
900
800
700
625
550
500
450
400
360
350
note2
Unidirectional
BZW06-5V8
BZW06-6V4
BZW06-8V5
BZW06-10
BZW06-13
BZW06-15
BZW06-19
BZW06-20
BZW06-23
BZW06-26
BZW06-28
BZW06-31
BZW06-33
BZW06-40
BZW06-48
BZW06-58
BZW06-70
BZW06-85
BZW06-102
BZW06-128
BZW06-154
BZW06-171
Bidirectional
BZW06-5V8B
BZW06-6V4B
BZW06-8V5B
BZW06-10B
BZW06-13B
BZW06-15B
BZW06-19B
BZW06-20B
BZW06-23B
BZW06-26B
BZW06-28B
BZW06-31B
BZW06-33B
BZW06-40B
BZW06-48B
BZW06-58B
BZW06-70B
BZW06-85B
BZW06-102B
BZW06-128B
BZW06-154B
BZW06-171B
V
5.8
6.4
8.5
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
40.2
47.8
58.1
70.1
85.5
102
128
154
171
V
6.45
7.13
9.5
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
44.7
53.2
64.6
77.9
95.0
114
143
171
190
mA
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2/6
BZW06-xx
Types
I
RM
@ V
RM
V
BR
@
I
R
min
note2
Unidirectional
BZW06-188
BZW06-213
BZW06-256
BZW06-273
BZW06-299
BZW06-342
BZW06-376
Bidirectional
BZW06-188B
BZW06-213B
BZW06-256B
BZW06-273B
BZW06-299B
BZW06-342B
BZW06-376B
µA
1
1
1
1
1
1
1
V
188
231
256
273
299
342
376
V
209
237
285
304
332
380
418
mA
1
1
1
1
1
1
1
V
CL
@ I
PP
max
10/1000µs
V
328
344
414
438
482
548
603
A
2.0
2.0
1.6
1.6
1.6
1.3
1.3
V
388
442
529
564
618
706
776
V
CL
@ I
PP
max
8/20µs
A
10.3
9.0
7.6
7.1
6.5
5.7
5.7
αT
max
note3
10
-4
/°C
10.8
11.0
11.0
11.0
11.0
11.0
11.0
C
typ
note4
pF
330
310
290
280
270
360
350
Fig. 1:
Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
% I
PP
100
10 s
PULSE WAVEFORM 10/1000 s
50
0
1000 s
t
Note 2 :
Note 3 :
Note 4 :
Pulse test: tp < 50 ms.
∆V
BR =
αT
* (Tamb - 25) * VBR(25°C)
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2
3/6
BZW06-xx
Fig. 2 :
Peak pulse power versus exponential pulse duration.
Ppp (W)
1E5
Tj initial = 25ø
°
C
1E4
1E3
1E2
tp (m
S
) EXPO.
1E1
0.001
0.01
0.1
1
10
100
Fig. 3 :
Clamping voltage versus peak pulse current.
Exponential waveform t
p
= 20
µs________
t
p
= 1 ms——————-
t
p
= 10 m...............
Note :
The curves of the figure 3 are specified for a junction temperature of 25°C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆V
BR
=
αT
*
(T
amb
-25)
*
V
BR
(25°C).
For intermediate voltages, extrapolate the given results.
4/6
BZW06-xx
Fig. 4a :
Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig. 4b :
Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig. 5 :
Peak forward voltage drop versus peak for-
ward current (typical values for unidirectional
types).
Fig. 6 :
Transient thermal impedance junction ambi-
ent versus pulse duration (For FR4 PC Board
with L
lead
= 10mm).
Fig. 7 :
Relative variation of leakage current ver-
sus junction temperature.
5/6
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