General Purpose Transistor
MMBTA92-G
(PNP)
RoHS Device
Features
-High voltage transistor.
SOT-23
0.119(3.00)
0.110(2.80)
3
0.056(1.40)
0.047(1.20)
Diagram:
Collector
3
1
0.079(2.00)
0.071(1.80)
2
0.006(0.15)
0.003(0.08)
1
Base
0.041(1.05)
0.035(0.90)
0.100(2.550)
0.089(2.250)
2
Emitter
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector current-pulsed
Collector power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
RΘJA
T
J
T
STG
Value
-300
-300
-5
-200
-500
300
410
150
-55 to +150
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
(Ta=25°C, unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Conditions
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-10V, I
C
=-1mA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Min
-300
-300
-5
Max
Unit
V
V
V
-0.25
-0.1
60
100
60
-0.2
-0.9
50
200
μA
μA
DC current gain
V
CE
=-10V,
IC
=-10mA
V
CE
=-10V, I
C
=-30mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
I
C
=-20mA, I
B
=-2mA
I
C
=-20mA, I
B
=-2mA
V
CE
=-20V, I
C
=-10mA
f=30MHz
V
V
MHz
REV: A
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR39
Page 1
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMBTA92-G)
Fig.1- I
C
70
COLLECTOR CURRENT, I
C
(mA)
—
V
CE
Fig.2- h
FE—
I
C
COMMON
-500uA
EMITTER
-450uA
Ta=25°C
-500uA
-450uA
-450uA
-350uA
-300uA
1000
60
50
40
30
20
10
0
0
4
8
DC Current Gain, h
FE
Ta=100°C
-250uA
-200uA
-150uA
-100uA
I
B
=-50uA
100
Ta= 25°C
0
12
16
20
24
-0.1
-1
-10
COMMON EMITTER
V
CE
=10V
-100
-300
Collector-Emitter Voltage,
V
CE
(V)
Collector Current , Ic (mA)
Fig.3 - V
CEsat —
I
C
-500
-900
Fig.4 - VBEsat
—
I
C
BASE-Emitter Saturation Voltage,
,
VBEsat (mV)
Collector-Emtter Saturation Voltage
,
V
CEsat
(mV)
Ta=25°C
-600
-100
Ta= 100°C
ß=10
ß=10
-10
-0.1
-1
-10
-50
-300
-0.1
-1
-10
-100
Collector Current , Ic (mA)
Collector Current, Ic (mA)
Fig.5 - I
C
— V
BE
-100
Fig.6 - F
T
— I
C
300
Ta
=1
0
-1
Ta
=2
5
-10
Transition frequency, f
T
(MH
Z
)
Collector Current, Ic (mA)
0°C
°C
100
-0.1
0
-300
-600
COMMON EMITTER
V
CE
=10V
COMMON EMITTER
V
CE
=-20V
T
A
=25°C
-900
-1200
10
-0.1
-1
-10
-100
Base - Emmiter Voltage , V
BE
(mV)
Collector current , I
C
(mA)
REV:A
QW-BTR39
Page 2
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMBTA92-G)
Fig. 7- Cob/Cib — V
CB
/V
EB
Collector Power Dissipation, Pc (mW)
100
Fig.8- P
C —
Ta
f=1MH
Z
I
E
=0/I
C
=0
Ta
=25°C
400
Capacitance, C ( pF)
Cib
300
10
Cob
200
100
0
-0.1
0
0
25
50
75
100
125
150
-1
-10
-20
Reverse Voltge , V ( V )
Ambient Temperature , Ta (°C)
REV:A
QW-BTR39
Page 3
Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
d
d
1.50
±
0.10
P0
P1
B
SYMBOL
A
3.15
±
0.10
0.124
±
0.004
B
2.77
±
0.10
0.109
±
0.004
C
1.22
±
0.10
F
D
178
±
2.00
7.008
±
0.079
E
D
1
54.40
±
1.00
2.142
±
0.039
D
2
13.00
±
1.00
0.512
±
0.039
SOT-23
(mm)
(inch)
0.048
±
0.004 0.059
±
0.004
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.10
0.138
±
0.004
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.10
W
8.00
+
0.30 /
–0.10
W
1
9.50
±
1.00
SOT-23
(mm)
(inch)
0.079
±
0.004
0.315
+
0.012 /
–0.004
0.374
±
0.039
REV:A
QW-BTR39
Page 4
Comchip Technology CO., LTD.
General Purpose Transistor
Marking Code
Part Number
MMBTA92-G
Marking Code
2D
3
2D
1
2
Suggested PAD Layout
SOT-23
SIZE
(mm)
A
B
C
D
0.80
1.90
2.02
2.82
(inch)
0.031
0.075
0.080
0.111
B
C
D
A
Standard Packaging
Qty Per Reel
Case Type
(Pcs)
SOT-23
3,000
Reel Size
(inch)
7
REV:A
QW-BTR39
Page 5
Comchip Technology CO., LTD.
嵌入式系统
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