General Purpose Transistor
MMBTA42-G
(NPN)
RoHS Device
Features
-High breakdown voltage.
-Low collector-emitter saturation voltage.
-Ultra small surface mount package.
0.056(1.40)
0.047(1.20)
SOT-23
0.119(3.00)
0.110(2.80)
3
Diagram:
Collector
3
1
0.079(2.00)
0.071(1.80)
2
0.006(0.15)
0.003(0.08)
1
Base
0.041(1.05)
0.035(0.90)
0.100(2.550)
0.089(2.250)
2
Emitter
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector current-peak
Collector power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
RΘJA
T
J
T
STG
Value
300
300
5
300
500
350
357
150
-55 to +150
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
(Ta=25°C, unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Conditions
I
C
=100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=1mA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Min
300
300
5
Max
Unit
V
V
V
0.25
0.1
60
100
60
0.2
0.9
50
200
μ
A
μA
DC current gain
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CE
=20V, I
C
=10mA
f=30MHz
V
V
MHz
REV:A
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR38
Page 1
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MMBTA42-G)
Fig.1- I
C
18
16
COLLECTOR CURRENT, I
C
(mA)
—
V
CE
Fig.2- h
FE—
I
C
COMMON
-500uA
EMITTER
-450uA
Ta=25°C
90uA
80uA
70uA
60uA
50uA
1000
DC Current Gain, h
FE
14
12
10
8
Ta=100°C
Ta= 25°C
40uA
30uA
100
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20uA
I
B
=10uA
0
0.1
1
10
COMMON EMITTER
V
CE
=10V
100
Collector-Emitter Voltage,
V
CE
(V)
Collector Current , Ic (mA)
Fig.3- V
CEsat —
I
C
500
900
Fig.4- VBEsat
—
I
C
BASE-Emitter Saturation Voltage,
,
VBEsat (mV)
Collector-Emtter Saturation Voltage
,
V
CEsat
(mV)
Ta=25°C
100
Ta=100°C
600
Ta= 100°C
Ta= 25°C
10
0
1
10
100
300
0
1
10
100
Collector Current , Ic (mA)
Collector Current, Ic (mA)
Fig.5- I
C
—
V
BE
100
Fig.6- F
T
— I
C
300
Ta
=1
0
1
Ta
=2
5
10
Transition frequency, f
T
(MH
Z
)
Collector Current, Ic (mA)
0°C
°C
100
0.1
0
300
600
COMMON EMITTER
V
CE
=10V
COMMON EMITTER
V
CE
=20V
T
A
=25°C
900
1200
10
0
1
10
100
Base - Emmiter Voltage , V
BE
(mV)
Collector current , I
C
(mA)
REV:A
QW-BTR38
Page 2
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (
MMBTA42-G
)
Fig. 7- Cob/Cib — V
CB
/V
EB
100
Fig.8- P
C —
Ta
Collector Power Dissipation, Pc (mW)
f=1MH
Z
I
E
=0/I
C
=0
Ta
=25°C
400
Cib
Capacitance, C ( pF)
300
10
200
Cob
100
0
0.1
1
10
20
0
0
25
50
75
100
125
150
Reverse Voltge , V ( V )
Ambient Temperature , Ta (°C)
REV:A
QW-JTR38
Page 3
Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
d
d
1.50
±
0.10
P0
P1
B
SYMBOL
A
3.15
±
0.10
0.124
±
0.004
B
2.77
±
0.10
0.109
±
0.004
C
1.22
±
0.10
F
D
178
±
2.00
7.008
±
0.079
E
D
1
54.40
±
1.00
2.142
±
0.039
D
2
13.00
±
1.00
0.512
±
0.039
SOT-23
(mm)
(inch)
0.048
±
0.004 0.059
±
0.004
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.10
0.138
±
0.004
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.10
W
8.00
+
0.30 /
–0.10
W
1
9.50
±
1.00
SOT-23
(mm)
(inch)
0.079
±
0.004
0.315
+
0.012 /
–0.004
0.374
±
0.039
REV:A
QW-JTR38
Page 4
Comchip Technology CO., LTD.
General Purpose Transistor
Marking Code
Part Number
MMBTA42-G
Marking Code
1D
3
1D
1
2
Suggested PAD Layout
SOT-23
SIZE
(mm)
A
B
C
D
0.80
1.90
2.02
2.82
(inch)
0.031
0.075
0.080
0.111
B
C
D
A
Standard Packaging
Qty Per Reel
Case Type
(Pcs)
SOT-23
3,000
Reel Size
(inch)
7
REV:A
QW-JTR38
Page 5
Comchip Technology CO., LTD.
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