Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling
capability.
Typical
application is transient overvoltage
protection in telecommunications
equipment.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
I
H
I
TSM
PARAMETER
BR211SM-140 to BR211SM-280
Breakover voltage
Holding current
Non-repetitive peak current
MIN.
140
150
-
MAX.
280
-
40
UNIT
V
mA
A
OUTLINE - SOD106
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
D
I
TSM1
I
TSM2
I
2
t
dI
T
/dt
P
tot
P
TM
T
stg
T
a
T
vj
PARAMETER
Continuous voltage
Non repetitive peak current
Non repetitive on-state current
I
2
t for fusing
Rate of rise of on-state current
after V
(BO)
turn-on
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature
Overload junction temperature
10/320
µs
impulse equivalent to
10/700
µs,
1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T
j
= 70 ˚C prior to surge
t
p
= 10 ms
t
p
= 10
µs
T
a
= 25˚C
t
p
= 1 ms; T
a
= 25˚C
off-state
on-state
CONDITIONS
MIN.
-
-
-
-
-
-
-
- 40
-
-
MAX.
75% of
V
(BO)typ
40
15
1.1
50
1.2
50
150
70
150
UNIT
V
A
A
A
2
s
A/µs
W
W
˚C
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
Z
th j-a
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
CONDITIONS
MIN.
-
pcb mounted; minimum footprint
t
p
= 1 ms
-
-
TYP.
-
100
2.62
MAX.
12
-
-
UNIT
K/W
K/W
K/W
August 1996
1
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
TM1
V
(BR)
V
(BO)
PARAMETER
On-state voltage
Avalanche voltage (min)
Breakover voltage (max)
CONDITIONS
I
TM
= 2 A
I
(BR)
= 10
mA
I
≤
I
S
, t
p
= 100
µs
BR211SM-140
BR211SM-160
BR211SM-180
BR211SM-200
BR211SM-220
BR211SM-240
BR211SM-260
BR211SM-280
MIN.
-
123
140
158
176
193
211
228
246
-
150
100
10
-
TYP.
-
140
160
180
200
220
240
260
280
+0.1
-
-
200
-
MAX.
2.5
157
180
202
224
247
269
292
314
-
-
-
1000
10
UNIT
V
V
V
V
V
V
V
V
V
%/K
mA
mA
mA
µA
S
(br)
I
H2
I
S3
I
D4
Temperature coefficient of V
(BR)
Holding current
T
j
= 25˚C
T
j
= 70˚C
Switching current
t
p
= 100
µs
Off-state current
V
D
= 85% V
(BR)min
, T
j
= 70˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
C
j
PARAMETER
Linear rate of rise of off-state
voltage that will not trigger any
device
Off-state capacitance
CONDITIONS
V
(DM)
= 85% V
(BR)min
; T
j
= 70 ˚C
V
D
= 0 V; f = 1 kHz to 1 MHz
MIN.
-
-
TYP.
-
-
MAX.
2000
100
UNIT
V/µs
pF
current
IT
VT
current
100%
90%
IS
ITSM
IH
ID
V(BR)
I(BR)
VD
voltage
V(BO)
50%
30%
0
Symbol
Symmetric BOD
time
10us
700us
Fig.1. Definition of breakover diode characteristics.
Fig.2. Test waveform for high voltage impulse (I
TSM1
)
according to CCITT vol IX-Rec K17.
1
Measured under pulsed conditions to avoid excessive dissipation
2
The minimum current at which the diode will remain in the on-state
3
The avalanche current required to switch the diode to the on-state
4
Measured at maximum recommended continuous voltage. Relative humidity < 65%.
August 1996
2
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
20
ITSM / A
BR211
I
ITSM2
time
100 ID / uA
15
10
10
max
1
5
0
0.1
1
10
100
Number of impulses
1000
10000
-40
-20
0
20
40
Tj / C
60
80
100
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; T
j
= 70˚C
prior to surge.
V(BR)(Tj)
V(BR)(25 C)
Fig.6. Maximum off-state current as a function of
temperature.
10 IS / A
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
1
max
typ
0.1
0.01
min
-40
-20
0
20
40
Tj / C
60
80
100
0.001
-50
0
50
Tj / C
100
150
Fig.4. Normalised avalanche breakdown voltage V
(BR)
and V
(BO)
as a function of temperature.
IT / A
Tj = 25 C
Tj = 150 C
15
Fig.7. Switching current as a function of junction
temperature.
20
10 IH / A
1
10
typ
max
0.1
min
5
0.01
0
1
2
VT / V
3
4
0.001
-50
0
50
Tj / C
100
150
Fig.5. On-state current as a function of on-state
voltage; t
p
= 200
µ
s to avoid excessive dissipation.
Fig.8. Minimum holding current as a function of
temperature.
August 1996
3
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
100
Cj / pF
1000
Zth / (K/W)
BR211
typ
BR211-140
100
BR211-280
10
10
1
P
D
t
p
t
1
1
10
VD / V
100
1000
0.1
10us
1ms
0.1s
tp / s
10s
1000s
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; T
j
= 25˚C.
Fig.10. Transient thermal impedance. Z
th j-a
= f(t
p
).
August 1996
4
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
5.5
5.1
4.5
4.3
2.3
2.0
0.2
0.05
3.3
2.7
2.8 1.6
2.4 1.4
Fig.11. SOD106.
Notes
1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering
Guidelines". Order code:9397 750 00505.
August 1996
5
Rev 1.100
嵌入式系统
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