U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 - 860 MHz. The high gain and broadband performance of this
device make it ideal for large-signal, common source amplifier applications in 28
volt transmitter equipment.
•
Typical Two-Tone Performance @ 860 MHz, 28 Volts, Narrowband Fixture
Output Power- 100 Watts PEP
Power Gain- 13.5dB
Efficiency - 36%
IMD--31 dBc
Typical Performance at 860 MHz, 28 Volts, Broadband Fixture
Output Power - 100 Watts PEP
Power Gain- 12 dB
Efficiency - 36%
IMD--34dBc
100% Tested for Load Mismatch Stress at All Phase Angles
with 5:1 VSWR @ 28 Vdc, 860 MHz, 100 Watts CW
Excellent Thermal Stability
Characterized with Differential Large-Signal Impedance Parameters
MRF374
470 - 860 MHz, 100 W, 28 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
•
•
•
•
CASE 375F-04
NI-650
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous (per Side)
Total Device Dissipation @ T
c
= 25''C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
8JC
Symbol
VDSS
Value
65
±20
7
Unit
Vdc
Vdc
Adc
W
W/°C
°C
"C
VGS
ID
PD
T
s»g
270
1.25
-65 to +150
200
Tj
Max
0.65
Unit
°c/w
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Quality Semi-Conductors
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (per Side)
(VQS = 0 Vdc, ID =1 jiA per Side)
Zero Gate Voltage Drain Current (per Side)
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current (per Side)
(V
GS
= 20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage (per Side)
(V
D
s = 1 0 V, I
D
= 200 nA per Side)
Gate Quiescent Voltage (per Side)
(VDS = 28 V, ID = 100 mA per Side)
Drain-Source On-Voltage (per Side)
(V
GS
= 1 0 V, ID = 3 A per Side)
Forward Transconductance (per Side)
(V
D
s = 10V, I
D
= 3 A per Side)
DYNAMIC CHARACTERISTICS (
1
>
Input Capacitance (per Side)
(VDS = 28 V, V
GS
= 0 V, f = 1 MHz)
Output Capacitance (per Side)
(V
DS
= 28 V, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance (per Side)
(V
DS
=
28
V, VGS = 0 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS, TWO-TONE TESTING <
2
>
Common Source Power Gain
(V
D
D = 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Intermodulation Distortion
(V
DD
=
2S
Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Load Mismatch
(V
DD
= 28 Vdc, P
out
= 100 W CW, I
DQ
= 400 mA,
f = 860 MHz, VSWR 5:1 at All Phase Angles of Test)
TYPICAL TWO-TONE BROADBAND
Common Source Power Gain
(V
DD
= 28 Vdc, P
ou
, = 100 W PEP, I
DQ
= 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 100 W PEP, IDQ = 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
(1) Each side of device measured separately.
(2) Measured in push-pull configuration.
G
ps
V
GS(th)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
-
—
-
—
—
-
1
1
Vdc
IDSS
'ass
|jAdc
(iAdc
2
3
-
2.2
3.5
4.2
4
Vdc
Vdc
Vdc
S
V
GS(Q)
5
VDS(on)
0.56
2.8
0.8
9fs
—
c
iss
Coss
-
80
45
3.5
-
—
—
PF
PF
PF
—
Crss
—
Gps
12.5
13.5
dB
n
IMD
30
36
%
-28
-31
dB
No Degradation in Output Power
12
dB
n
IMD
36
%
-34
dB
, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
C8A i
C13A
C7A'
'
C14A
R3All
C4A
C2
C5
, C3
R1A
C6
Lj
C9A
C10
L1A
c12
A
C11
ct
C4B
R1B
C9B
I C12B
C8B
R3B
.C13B
C14B
MRF374
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 860 MHz Balun
Rogers R03010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil "tab"
fits into the main PCB "slot" resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Figure 1. Narrowband Component Layout
Quality Semi-Conductors
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