<^>£.ml-(2ona.uctoi Lpioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN - MJ15022, MJ15024*
*MJ15024 is a Preferred Device
Silicon Power Transistors
The MJ15022 and MJ15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
Features
• High Safe Operating Area (100% Tested) - 2 A @ 80 V
• High DC Current Gain - h
FE
= 15 (Min) @ I
c
= 8 Adc
16 AMPERES
SILICON POWER TRANSISTORS
200 - 250 VOLTS, 250 WATTS
Unit
Vdc
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
MJ 15022
MJ 15024
Collector-Base Voltage
MJ 15022
MJ 15024
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
- Continuous
- Peak (Note 1)
Symbol
V
CEO
Value
200
250
V
CBO
Vdc
350
400
5
400
VEBO
VCEX
Vdc
Vdc
Adc
Adc
W
W/"C
°C
(TO-3)
Ic
IB
PD
Tj,
T
s
(g
16
30
5
Base Current - Continuous
Total Device Dissipation @ T
c
= 25"C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
250
1.43
-65 to +200
Symbol
Max
Unit
0.70
J
C/W
RHJC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
NPN-MJ15022, MJ15024*
ELECTRICAL CHARACTERISTICS
(T
c
=
25=C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(l
c
= lOOmAdc, I
B
= 0)
VCEO(SUS)
MJ15022
MJ 15024
'CEX
200
250
Symbol
Min
Max
Unit
-
(iAdc
Collector Cutoff Current
(V
CE
= 200 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 250 Vdc, V
BE(0
ff) = 1.5 Vdc)
Collector Cutoff Current
(V
CE
= 150 Vdc, IB = 0)
(V
C
E = 200 vdc, IB = 0)
Emitter Cutoff Current
(V
CE
= 5 Vdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 0.5 s (non-repetitive))
(V
CE
= 80 Vdc, t = 0.5 s (non-repetitive))
ON CHARACTERISTICS
DC Current Gain
(l
c
= 8 Adc, V
CE
= 4 Vdc)
(l
c
= 16 Adc, VCE = 4 Vdc)
Collector-Emitter Saturation Voltage
(l
c
= 8Adc, I
B
= 0.8 Adc)
(l
c
= 16 Adc, I
B
= 3.2 Adc)
Base- Emitter On Voltage
(l
c
= 8 Adc, V
CE
= 4 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(l
c
= 1 Adc, V
CE
= 10 Vdc, f,est = 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
2. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%.
MJ 1 5022
MJ15024
'CEO
-
250
250
iiAdc
MJ 15022
MJ1 5024
!EBO
:
—
500
500
500
|.iAdc
's/b
Adc
5
2
-
-
HFE
15
5
-
60
-
Vdc
-
-
VcE(sat)
1.4
4.0
2.2
v
BE(on)
-
Vdc
f
T
Cob
4
"
—
MHz
500
PF
100
50
TC
1
20
^
10
-
*\M
^"
l
v
_
- E
ONDI NGWIF
E
TE
D
}
- T
HERU
1AL LIM IT/
VTIC
N
—t.
o
-
(
5INGL EPULS
E
b
ECOI>IDBRE
W
D0\
<VN
L
MITE
D
IpHf
CD p
—••
ro
\2
20
50
100
\
250
500
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate lc - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure I is based on
Tj(pk) =
200°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
1k
1C, COLLECTOR CURR!
cn
o
0.1
0.2
0.5
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active-Region Safe Operating Area
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